Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXBX25N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

55 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

650 ns

3

IN-LINE

150 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

694 ns

IXDH20N120

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

38 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

TO-247AD

e3

10

260

175 ns

IXGF30N400

Littelfuse

N-CHANNEL

SINGLE

NO

160 W

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

724 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

4000 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

201 ns

UL RECOGNIZED

IXGH36N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

92 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

45 ns

IXGP20N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

1530 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

66 ns

IXGT2N250

Littelfuse

N-CHANNEL

SINGLE

YES

32 W

5.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

278 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

115 ns

IXGT72N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

540 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

GULL WING

RECTANGULAR

1

885 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

61 ns

IXXH150N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

300 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

100 ns

IXXH60N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

145 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

208 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

94 ns

IXXH80N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

125 ns

IXYA20N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

GULL WING

RECTANGULAR

1

646 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

50 ns

IXYK120N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

1500 W

240 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

346 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

105 ns

IXYK140N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1500 W

480 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

1240 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

86 ns

IXYT30N450HV

Littelfuse

N-CHANNEL

SINGLE

YES

430 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

GULL WING

RECTANGULAR

1

1545 ns

2

SMALL OUTLINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

632 ns

IXYT85N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

1150 W

300 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

990 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

73 ns

MIEB101W1200EH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

630 W

183 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

700 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X19

ISOLATED

175 ns

UL RECOGNIZED

MII300-12A4

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1380 W

330 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

690 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

160 ns

UL RECOGNIZED

MKI50-12F7

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

390 ns

17

FLANGE MOUNT

125 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

MWI75-06A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MWI75-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

90 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

310 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

IXA12IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXA4IF1200UC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

9 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBF50N360

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

1880 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

889 ns

IXBH24N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

190 ns

IXBT14N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

1910 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

810 ns

IXBT32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

400 W

80 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

795 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

573 ns

IXDH35N60BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

390 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e3

10

260

75 ns

IXGA48N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

GULL WING

RECTANGULAR

1

925 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

54 ns

IXGE200N60B

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

540 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

IXGH25N100A

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

1520 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1000 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e3

350 ns

IXGH28N120B

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

590 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

63 ns

IXGH2N250

Littelfuse

N-CHANNEL

SINGLE

NO

32 W

5.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

278 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

115 ns

IXGH32N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

1380 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

239 ns

IXGK55N120A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

1253 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

70 ns

IXGK75N250

Littelfuse

N-CHANNEL

SINGLE

NO

735 W

180 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

e1

10

260

305 ns

IXGN400N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.25 V

UNSPECIFIED

RECTANGULAR

1

840 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

124 ns

IXGN72N60C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

78 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

110 ns

132 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

UPPER

R-PUFM-X4

ISOLATED

64 ns

UL RECOGNIZED

IXGT6N170

Littelfuse

N-CHANNEL

SINGLE

YES

75 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268

e3

10

260

85 ns

IXGX100N170

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e1

285 ns

IXGX120N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

830 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

123 ns

IXXH30N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

57 ns

IXXH50N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

75 ns

IXXK200N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

380 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

140 ns

IXYH30N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

75 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

71 ns

IXYH60N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

750 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

104 ns

IXYH80N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

165 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

134 ns

IXYP10N65C3D1M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

128 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

44 ns

IXYP20N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

278 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.