Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXBX50N360HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

125 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

1880 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

889 ns

IXGA30N120B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

IXGT10N170A

Littelfuse

N-CHANNEL

SINGLE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

240 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268

e3

10

260

107 ns

IXYH8N250CV1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

29 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

328 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

24 ns

MIEB101H1200EH

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

630 W

183 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

4

700 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X14

ISOLATED

175 ns

UL RECOGNIZED

IXGH30N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

45 ns

IXBH12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

204 ns

IXXK100N60C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

170 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

95 ns

IXBH42N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

1070 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

224 ns

IXGH16N170

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

32 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1100 ns

1600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

90 ns

IXYH85N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

300 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

990 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

73 ns

IXGH40N120B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

79 ns

IXXK110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

250 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

65 ns

MUBW20-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

IXGT16N170A

Littelfuse

N-CHANNEL

SINGLE

YES

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

150 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

97 ns

IXA20I1200PB

Littelfuse

N-CHANNEL

SINGLE

NO

165 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBT42N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

GULL WING

RECTANGULAR

1

1070 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

224 ns

IXGH48N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

45 ns

IXA37IF1200HJ

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXYY8N90C3

Littelfuse

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

10

260

39 ns

IXA12IF1200PB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBK75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

277 ns

IXGN400N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

1000 W

430 A

PLASTIC/EPOXY

POWER CONTROL

1.5 V

UNSPECIFIED

RECTANGULAR

1

200 ns

345 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

100 ns

UL RECOGNIZED

IXGQ85N33PCD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

115 ns

IXYH85N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

317 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

95 ns

IXYP30N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

75 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

296 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

71 ns

IXBH9N160G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

9 A

PLASTIC/EPOXY

POWER CONTROL

7 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

150 Cel

SILICON

1600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

340 ns

IXGA12N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

1545 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

202 ns

IXGR48N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

56 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

45 ns

UL RECOGNIZED

IXYH50N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

130 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

142 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

56 ns

IXYR100N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

484 W

104 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

122 ns

MIXA40W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

195 W

60 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

IXBH14N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

1910 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

810 ns

IXBH20N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

10

260

608 ns

IXGF20N300

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

22 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

355 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

524 ns

UL RECOGNIZED

IXGR6N170A

Littelfuse

N-CHANNEL

SINGLE

NO

50 W

5.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

65 ns

271 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AD

e1

10

260

91 ns

IXXH80N65B4D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

180 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

125 ns

IXXN110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

230 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

250 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

65 ns

UL RECOGNIZED

IXYH100N65C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

62 ns

IXYH40N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

80 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

303 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

95 ns

IXYH82N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

119 ns

IXYN100N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

UPPER

R-PUFM-X4

ISOLATED

62 ns

UL RECOGNIZED

IXYX110N120B4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

340 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

IN-LINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

COLLECTOR

95 ns

MG06100S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

360 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

UL RECOGNIZED

MUBW10-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

50 W

12 A

UNSPECIFIED

POWER CONTROL

3.3 V

UNSPECIFIED

RECTANGULAR

7

320 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

PURE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

40 ns

IXA70R1200NA

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747; UL RECOGNIZED

IXBF40N160

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

28 A

PLASTIC/EPOXY

POWER CONTROL

7.1 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

IN-LINE

150 Cel

SILICON

1600 V

-55 Cel

20 V

8 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

HIGH RELIABILITY

260 ns

IXBT12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

204 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.