Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXXX200N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

480 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

135 ns

IXXX160N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

940 W

310 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

93 ns

IXXX300N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

550 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

137 ns

IXDR35N60BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

390 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH SPEED

e1

75 ns

IXXX110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

250 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

65 ns

IXXX160N65C4

Littelfuse

N-CHANNEL

NO

940 W

290 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

Matte Tin (Sn)

e3

IXYN100N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

690 W

134 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

265 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

122 ns

UL RECOGNIZED

IXXX300N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

510 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

278 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

128 ns

IXXX200N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

340 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

143 ns

IXXX200N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

1630 W

380 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

IN-LINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSIP-T3

COLLECTOR

e3

140 ns

MIXA30W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

150 W

43 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

IXA60IF1200NA

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

88 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747; UL RECOGNIZED

IXGA20N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

e3

10

260

66 ns

IXLF19N250A

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

19 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

8 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

150 ns

UL RECOGNIZED

IXDN55N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

100 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

570 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

170 ns

UL RECOGNIZED

IXYN82N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

105 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

295 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

UPPER

R-PUFM-X4

ISOLATED

119 ns

UL RECOGNIZED

IXYH30N450HV

Littelfuse

N-CHANNEL

SINGLE

NO

430 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

FLANGE MOUNT

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

632 ns

IXGH60N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

198 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

54 ns

IXYF40N450

Littelfuse

N-CHANNEL

SINGLE

NO

290 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1128 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

786 ns

IXBX75N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

110 A

PLASTIC/EPOXY

POWER CONTROL

6 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

478 ns

3

IN-LINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

66 ns

IXBX75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

IN-LINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

277 ns

IXGH72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

540 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

61 ns

IXDN75N120

Littelfuse

N-CHANNEL

SINGLE

NO

660 W

150 A

UNSPECIFIED

MOTOR CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

700 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

150 ns

UL RECOGNIZED

IXGH32N170A

Littelfuse

N-CHANNEL

SINGLE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

107 ns

IXXN110N65C4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

210 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

UNSPECIFIED

RECTANGULAR

1

160 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

71 ns

UL RECOGNIZED

IXBK55N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

130 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

637 ns

IXDP20N60BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

IXYN100N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

152 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

265 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUFM-X4

ISOLATED

AVALANCHE RATED

122 ns

UL RECOGNIZED

IXYH25N250CHV

Littelfuse

N-CHANNEL

SINGLE

NO

937 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

575 ns

3

FLANGE MOUNT

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

51 ns

IXGN100N170

Littelfuse

N-CHANNEL

SINGLE

NO

735 W

160 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

720 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

285 ns

UL RECOGNIZED

IXA27IF1200HJ

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

43 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXXH30N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

57 ns

IXGT6N170AHV

Littelfuse

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

7 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

91 ns

IXGH6N170A

Littelfuse

N-CHANNEL

SINGLE

NO

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

65 ns

271 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

91 ns

IXGN50N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

UNSPECIFIED

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

UPPER

R-PUFM-X4

ISOLATED

60 ns

UL RECOGNIZED

IXYT25N250CHV

Littelfuse

N-CHANNEL

SINGLE

YES

937 W

95 A

PLASTIC/EPOXY

POWER CONTROL

4 V

GULL WING

RECTANGULAR

1

775 ns

2

SMALL OUTLINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

51 ns

IXXH75N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

750 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

105 ns

IXXH75N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

105 ns

IXYH50N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

96 ns

IXYX40N450HV

Littelfuse

N-CHANNEL

SINGLE

NO

660 W

95 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1128 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

786 ns

MIXA60W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

290 W

85 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MUBW15-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

170 ns

IXA17IF1200HJ

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

28 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

MWI50-06A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

225 W

72 A

UNSPECIFIED

POWER CONTROL

2.4 V

PIN/PEG

RECTANGULAR

6

330 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P11

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

IXDH30N120D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

435 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-247AD

e3

10

260

170 ns

IXGN200N170

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

280 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

1040 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

183 ns

UL RECOGNIZED

IXGN320N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

735 W

320 A

PLASTIC/EPOXY

POWER CONTROL

1.3 V

UNSPECIFIED

RECTANGULAR

1

1870 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

139 ns

UL RECOGNIZED

IXBH20N360HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

430 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

FLANGE MOUNT

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

922 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.