Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1630 W |
480 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
135 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
940 W |
310 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
93 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
550 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
137 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
38 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
390 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e1 |
75 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
880 W |
250 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
65 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
NO |
940 W |
290 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
6.5 V |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
690 W |
134 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
265 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
122 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
510 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
278 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
128 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1630 W |
340 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
143 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1630 W |
380 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
395 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
140 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 W |
43 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
88 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
350 ns |
4 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747; UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
180 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1530 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AA |
e3 |
10 |
260 |
66 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
19 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
850 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
8 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e1 |
150 ns |
UL RECOGNIZED |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
450 W |
100 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
NICKEL |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
170 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
105 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
295 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
119 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
430 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1545 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
632 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
380 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
198 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
54 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
290 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1128 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
786 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
110 A |
PLASTIC/EPOXY |
POWER CONTROL |
6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
478 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
66 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
840 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
277 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
540 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
885 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
61 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
660 W |
150 A |
UNSPECIFIED |
MOTOR CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
700 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
NICKEL |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
150 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
32 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
107 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
750 W |
210 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.35 V |
UNSPECIFIED |
RECTANGULAR |
1 |
160 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
71 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 W |
130 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
475 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
3000 V |
-55 Cel |
25 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
637 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
152 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
265 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
5 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
AVALANCHE RATED |
122 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
937 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
575 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
2500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
51 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
735 W |
160 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
720 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
NICKEL |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
285 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.85 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
292 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
57 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
7 V |
GULL WING |
RECTANGULAR |
1 |
271 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-268AA |
e3 |
10 |
260 |
91 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
65 ns |
271 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
91 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
460 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
485 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
60 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
937 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
GULL WING |
RECTANGULAR |
1 |
775 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
2500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
51 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
750 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
185 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
105 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
750 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
185 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
105 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
96 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
660 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1128 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
786 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
290 W |
85 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
570 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
170 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
28 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
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|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
225 W |
72 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
PIN/PEG |
RECTANGULAR |
6 |
330 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-P11 |
ISOLATED |
Not Qualified |
ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
110 ns |
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|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
435 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
570 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW SWITCHING LOSSES |
TO-247AD |
e3 |
10 |
260 |
170 ns |
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Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
280 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1040 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
183 ns |
UL RECOGNIZED |
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|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
735 W |
320 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
NICKEL |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
139 ns |
UL RECOGNIZED |
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Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
430 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1285 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
3600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
922 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.