Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MIXA81H1200EH

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

4

350 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X14

ISOLATED

110 ns

UL RECOGNIZED

MIXG120W1200TEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

186 A

UNSPECIFIED

POWER CONTROL

2 V

PIN/PEG

RECTANGULAR

6

330 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-P35

ISOLATED

120 ns

UL RECOGNIZED

MMIX4B20N300

Littelfuse

N-CHANNEL

COMPLEX

YES

34 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

4

695 ns

9

SMALL OUTLINE

SILICON

3000 V

DUAL

R-PDSO-G9

ISOLATED

608 ns

MUBW10-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

90 ns

MWI75-12T7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

355 W

110 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

VUB120-16NO2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

e4

UL RECOGNIZED

IXBH42N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

42 A

PLASTIC/EPOXY

POWER CONTROL

6 V

THROUGH-HOLE

RECTANGULAR

1

308 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

33 ns

IXBH32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

80 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

573 ns

IXGH48N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

47 ns

IXYA20N120B4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

440 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

48 ns

IXGR72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

52 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AD

e1

10

260

61 ns

UL RECOGNIZED

IXGR48N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

47 ns

UL RECOGNIZED

IXGR35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

54 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

780 ns

3

IN-LINE

150 Cel

SILICON

1200 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

10

260

105 ns

MWI15-12T6K

Littelfuse

IXGQ35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

780 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

105 ns

IXGQ50N50Y4

Littelfuse

250 W

50 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

VUB145-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

570 W

141 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

1

11

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

GOLD OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e4

UL RECOGNIZED

IXGR72N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

132 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

64 ns

MWI150-12T8T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

690 W

215 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

840 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

UL RECOGNIZED

MUBW50-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

330 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

IXGR48N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

47 ns

UL RECOGNIZED

MWI15-12A7T

Littelfuse

MUBW35-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

104 W

38 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

220 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

65 ns

IXGQ90N33TBD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

39 ns

IXGR55N120A3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

1253 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

70 ns

MUBW35-12A8

Littelfuse

N-CHANNEL

COMPLEX

NO

225 W

50 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

IXGR24N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

54 ns

MUBW75-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

320 W

100 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

6

490 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

210 ns

UL RECOGNIZED

IXGR72N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

132 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

SINGLE

R-PSIP-T3

ISOLATED

e1

64 ns

IXGQ90N27PB

Littelfuse

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

FLANGE MOUNT

150 Cel

SILICON

270 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

89 ns

MUBW15-12A6

Littelfuse

N-CHANNEL

COMPLEX

NO

70 W

18 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

770 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

120 ns

IXGQ96N30PCD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

266 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

139 ns

VUB135-22NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

113 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1080 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

GOLD OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e4

320 ns

UL RECOGNIZED

IXGQ170N30PB

Littelfuse

N-CHANNEL

SINGLE

NO

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

259 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

103 ns

MWI100-06A8

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

410 W

130 A

UNSPECIFIED

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

6

180 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

e3

36 ns

UL RECOGNIZED

MWI150-06

Littelfuse

MWI100-12T8T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

480 W

145 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

740 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

UL RECOGNIZED

MUBW50-17T8

Littelfuse

N-CHANNEL

COMPLEX

NO

290 W

74 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

980 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

300 ns

UL RECOGNIZED

IXGQ100N60Y4

Littelfuse

400 W

100 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MWI75-12AS

Littelfuse

N-CHANNEL

NO

73 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

17

FLANGE MOUNT

SILICON

1200 V

PURE TIN

UPPER

R-PUFM-P17

Not Qualified

VUB160-12NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

MUBW15-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

75 W

12 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

200 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

30 ns

MUBW20-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

12 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

165 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

PURE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

IXGQ20N120B

Littelfuse

N-CHANNEL

SINGLE

NO

190 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

43 ns

VUB160-16NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

177 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1600 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

VUB120-12NO2TL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-P16

ISOLATED

Not Qualified

NTC

e4

UL REGISTERED

IXGR35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

265 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

410 ns

5 V

TIN LEAD

SINGLE

R-PSIP-T3

ISOLATED

77 ns

UL RECOGNIZED

IXGQ75N90Y4

Littelfuse

300 W

75 A

4.5 V

1

Insulated Gate BIP Transistors

150 Cel

900 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.