Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
390 W |
120 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
4 |
350 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
110 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
625 W |
186 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
PIN/PEG |
RECTANGULAR |
6 |
330 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-P35 |
ISOLATED |
120 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
YES |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
4 |
695 ns |
9 |
SMALL OUTLINE |
SILICON |
3000 V |
DUAL |
R-PDSO-G9 |
ISOLATED |
608 ns |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
90 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
355 W |
110 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
140 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
e4 |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
357 W |
42 A |
PLASTIC/EPOXY |
POWER CONTROL |
6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
308 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
33 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
795 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
3000 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
573 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
246 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
400 ns |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
47 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
375 W |
76 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
440 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
48 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
52 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
885 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-247AD |
e1 |
10 |
260 |
61 ns |
UL RECOGNIZED |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
246 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
400 ns |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
e1 |
10 |
260 |
47 ns |
UL RECOGNIZED |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
54 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
780 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e1 |
10 |
260 |
105 ns |
||||||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
780 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
105 ns |
||||||||||||||||||||||||||
Littelfuse |
250 W |
50 A |
3.5 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
570 W |
141 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e4 |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
132 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
240 ns |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
e1 |
10 |
260 |
64 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
690 W |
215 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
840 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
320 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
250 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
330 ns |
20 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X20 |
ISOLATED |
Not Qualified |
e3 |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
246 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
400 ns |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
e1 |
10 |
260 |
47 ns |
UL RECOGNIZED |
||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
104 W |
38 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
220 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
FAST |
e3 |
65 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
330 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
39 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1253 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
e1 |
10 |
260 |
70 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
225 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
570 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
e1 |
10 |
260 |
54 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
320 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
210 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
132 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
240 ns |
5.5 V |
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
SINGLE |
R-PSIP-T3 |
ISOLATED |
e1 |
64 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
428 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
270 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
89 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
70 W |
18 A |
UNSPECIFIED |
POWER CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
770 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
FAST |
e3 |
120 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
96 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
266 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
300 V |
PURE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
139 ns |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
113 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1080 ns |
11 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e4 |
320 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
170 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
259 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
300 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
103 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
410 W |
130 A |
UNSPECIFIED |
MOTOR CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
180 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
e3 |
36 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
480 W |
145 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
740 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
320 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
290 W |
74 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
980 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1700 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
300 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Littelfuse |
400 W |
100 A |
4 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
NO |
73 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
17 |
FLANGE MOUNT |
SILICON |
1200 V |
PURE TIN |
UPPER |
R-PUFM-P17 |
Not Qualified |
|||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
140 A |
UNSPECIFIED |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-P16 |
ISOLATED |
Not Qualified |
NTC |
e4 |
UL REGISTERED |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
75 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
200 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
30 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
85 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
165 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
PURE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
190 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
630 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
43 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
177 A |
UNSPECIFIED |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
1600 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-P16 |
ISOLATED |
Not Qualified |
NTC |
e4 |
UL REGISTERED |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
140 A |
UNSPECIFIED |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
GOLD OVER NICKEL |
UPPER |
R-XUFM-P16 |
ISOLATED |
Not Qualified |
NTC |
e4 |
UL REGISTERED |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
265 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
410 ns |
5 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
ISOLATED |
77 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Littelfuse |
300 W |
75 A |
4.5 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
20 V |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.