Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXYP8N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

238 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

IXGM20N100A

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXA4IF1200TC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

9 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXYT30N65C3H1HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

270 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

59 ns

IXBH9N140

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

9 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

260 ns

IXDT30N120

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

570 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e3

10

260

170 ns

VWI35-06P1

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

31 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

330 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

IXGM20N90

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXYT40N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

1040 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

67 ns

IXGM10N80A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXDN75N120A

Littelfuse

N-CHANNEL

SINGLE

NO

630 W

120 A

PLASTIC/EPOXY

MOTOR CONTROL

140 ns

UNSPECIFIED

RECTANGULAR

1

100 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

NICKEL

UPPER

R-PUFM-X4

Not Qualified

UL RECOGNIZED

T2960BB45E

Littelfuse

N-CHANNEL

SINGLE

YES

23800 W

3000 A

CERAMIC, METAL-SEALED COFIRED

3.15 V

UNSPECIFIED

ROUND

1

7800 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

END

O-CEDB-X3

3300 ns

MITH450PF1200LP

Littelfuse

IXGP20N120

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

780 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

1500 ns

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

48 ns

VIE125-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

125 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

830 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

IXGP10N90A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXD75IF650NA

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

1

160 ns

4

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

70 ns

IEC-60747; UL RECOGNIZED

MWI35-12A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

62 A

UNSPECIFIED

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

6

570 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

180 ns

UL RECOGNIZED

IXGD17N100A-4T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXYP20N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

646 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

50 ns

IXST30N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

436 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

80 ns

LGB8206ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

MID550-12A4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2750 W

670 A

UNSPECIFIED

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

1

690 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

160 ns

UL RECOGNIZED

IXA20PT1200LB

Littelfuse

N-CHANNEL

YES

100 W

28 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

VUI9-06N7

Littelfuse

N-CHANNEL

COMPLEX

NO

37 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

1

390 ns

9

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-P9

ISOLATED

Not Qualified

FREE WHEELING DIODE

NOT SPECIFIED

NOT SPECIFIED

80 ns

MG17300WB-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1300 ns

11

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

385 ns

UL RECOGNIZED

IXGK120N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

200 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

830 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

123 ns

IXGD40N30-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYA24N100A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

375 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

GULL WING

RECTANGULAR

1

525 ns

2

SMALL OUTLINE

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

53 ns

MITH225PF1200LP

Littelfuse

IXGP10N100

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

FII40-06D

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

2

310 ns

5

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

100 ns

IXGD25N120A-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N5

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXA30PG1200DHGLB-TRR

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

150 W

43 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

2

350 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

Nickel (39) Tin (984)

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

110 ns

UL RECOGNIZED

IXGP20N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

35 ns

IXGX72N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

178 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

150 ns

244 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

390 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

64 ns

IXGK35N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

86 ns

VKI50-06P1

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

42.5 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

4

310 ns

16

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXYA15N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

122 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

36 ns

MG12150W-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

T0600TA45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

776 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2400 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3700 ns

IXGF25N250

Littelfuse

N-CHANNEL

SINGLE

NO

114 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

409 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

301 ns

UL RECOGNIZED

MG12100S-BN2MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

610 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

IXGD50N60B-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

T0285NC33E

Littelfuse

IXYP20N120B4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

76 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

48 ns

VUB60-16NO1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

220 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-PUFM-X8

ISOLATED

Not Qualified

e4

100 ns

UL RECOGNIZED

IXGA14N120B

Littelfuse

N-CHANNEL

SINGLE

YES

28 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1210 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.