Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
238 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
150 W |
40 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
350 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
270 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
120 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-268AA |
e3 |
10 |
260 |
59 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1400 V |
20 V |
8 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST |
TO-247AD |
e3 |
10 |
260 |
260 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
570 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW SWITCHING LOSSES |
TO-268AA |
e3 |
10 |
260 |
170 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
31 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
330 ns |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
150 W |
40 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
600 W |
140 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
1040 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
67 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
800 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
630 W |
120 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
140 ns |
UNSPECIFIED |
RECTANGULAR |
1 |
100 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
NICKEL |
UPPER |
R-PUFM-X4 |
Not Qualified |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
23800 W |
3000 A |
CERAMIC, METAL-SEALED COFIRED |
3.15 V |
UNSPECIFIED |
ROUND |
1 |
7800 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
3300 ns |
||||||||||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
700 ns |
780 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
1500 ns |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
48 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
125 A |
CERAMIC, METAL-SEALED COFIRED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
10 |
FLANGE MOUNT |
830 W |
150 Cel |
SILICON |
1200 V |
UPPER |
R-CUFM-X10 |
ISOLATED |
Not Qualified |
INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
1000 ns |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
160 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
IEC-60747; UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
280 W |
62 A |
UNSPECIFIED |
POWER CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
570 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e3 |
180 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
1000 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
646 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
50 ns |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
436 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
80 ns |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2750 W |
670 A |
UNSPECIFIED |
POWER CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
1 |
690 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
160 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
YES |
100 W |
28 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
37 A |
PLASTIC/EPOXY |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
390 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-PUFM-P9 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
375 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1300 ns |
11 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
385 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
780 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
830 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
123 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
300 V |
UPPER |
S-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
375 W |
85 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
525 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
53 ns |
|||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
100 W |
20 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
125 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
2 |
310 ns |
5 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e1 |
100 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N5 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
150 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
GULL WING |
RECTANGULAR |
2 |
350 ns |
9 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
Nickel (39) Tin (984) |
DUAL |
R-PDSO-G9 |
ISOLATED |
HIGH RELIABILITY |
110 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
790 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
35 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
540 W |
178 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
244 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
390 ns |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
64 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
480 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-264AA |
86 ns |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
42.5 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
310 ns |
16 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
38 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
122 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AA |
e3 |
10 |
260 |
36 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
776 A |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
1 |
2400 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
4500 V |
END |
O-CEDB-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
3700 ns |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
114 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
409 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e1 |
301 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
140 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
610 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
375 W |
76 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
440 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
48 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
220 ns |
8 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
GOLD OVER NICKEL |
UPPER |
R-PUFM-X8 |
ISOLATED |
Not Qualified |
e4 |
100 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
28 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
1210 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
45 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.