Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MKI80-06T6K

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

210 W

89 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

320 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

50 ns

UL RECOGNIZED

IXGA20N250HV

Littelfuse

N-CHANNEL

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

IXGA24N120C3

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

51 ns

VIO600-12S

Littelfuse

2300 W

600 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

MWI225-17E9

Littelfuse

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1400 W

335 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

6

610 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

e3

290 ns

UL RECOGNIZED

T0510VB45E

Littelfuse

N-CHANNEL

SINGLE

YES

4100 W

510 A

CERAMIC, METAL-SEALED COFIRED

3.2 V

UNSPECIFIED

ROUND

1

5000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

END

O-CEDB-X3

7100 ns

MG12150S-BN2MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

610 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

IXYJ20N120C3D1

Littelfuse

N-CHANNEL

NO

105 W

21 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

VII25-12P1

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

130 W

30 A

UNSPECIFIED

MOTOR CONTROL

3.3 V

UNSPECIFIED

RECTANGULAR

2

570 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

175 ns

IXGD28N30-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

300 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGK50N60A2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

890 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

e1

10

260

45 ns

MITH200PF1700LP

Littelfuse

MKI65-06A7

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

490 ns

14

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

VUI30-12N1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

95 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

570 ns

6

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

VIE200-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

200 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

1100 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

IXGD20N100-4U

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

VWI20-06P1

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

19 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

260 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

70 ns

T0900EA45A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1212 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2400 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3900 ns

IXGD4N100-1T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGD2N100-1M

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MG1225H-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

FID36-06D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

390 ns

5

IN-LINE

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

80 ns

MG12100D-BA1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

160 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

615 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

ITF38IF1200HR

Littelfuse

IXGL75N250

Littelfuse

N-CHANNEL

SINGLE

NO

400 W

110 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

MG12300D-BA1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

605 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

UL RECOGNIZED

MII150-12A4

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

830 W

180 A

UNSPECIFIED

MOTOR CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

570 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

UL RECOGNIZED

IXGP4N100

Littelfuse

N-CHANNEL

SINGLE

NO

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1220 ns

3

FLANGE MOUNT

SILICON

1000 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

45 ns

IXGK55N120A3D1

Littelfuse

N-CHANNEL

NO

460 W

125 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

TIN SILVER COPPER

e1

10

260

IXGA12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

IXRH50N100

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

180 ns

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXST30N60C

Littelfuse

N-CHANNEL

SINGLE

YES

200 W

55 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

120 ns

290 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-268AA

e3

10

260

70 ns

IXGP12N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

202 ns

IXYK30N170CV1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

937 W

100 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

327 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

49 ns

IXXR110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

165 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

65 ns

IXGX35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

SINGLE

R-PSIP-T3

COLLECTOR

77 ns

IXGM10N50

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

FII24N17AH1

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

2

275 ns

5

IN-LINE

150 Cel

SILICON

1700 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

e1

100 ns

UL RECOGNIZED

LGB8206ARI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

IXYL40N250CV1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

577 W

80 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

505 ns

3

IN-LINE

175 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

43 ns

IXRH50N80

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

800 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

180 ns

IXGP20N120B

Littelfuse

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

35 ns

XGH10N170

Littelfuse

T0800TA45E

Littelfuse

N-CHANNEL

SINGLE

YES

1267 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

4000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3300 ns

T0240NA45E

Littelfuse

N-CHANNEL

SINGLE

YES

316 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

4000 ns

3

DISK BUTTON

125 Cel

SILICON

4500 V

END

O-CEDB-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2400 ns

IXYJ30N120C3D1

Littelfuse

IXGX120N60B

Littelfuse

N-CHANNEL

SINGLE

NO

660 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

360 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

640 ns

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.