Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGE50N50Z

Littelfuse

200 W

50 A

3 V

1

Insulated Gate BIP Transistors

500 V

IXGX120N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

1365 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

105 ns

MUEW15-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

7

25

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-P25

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

IXGM20N50

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGD28N30A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

300 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGM20N100

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

1000 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXYP10N65B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

32 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

263 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

54 ns

T1200EB45E

Littelfuse

N-CHANNEL

12500 W

1200 A

Insulated Gate BIP Transistors

125 Cel

4500 V

20 V

T1200TB25A

Littelfuse

N-CHANNEL

5900 W

1200 A

Insulated Gate BIP Transistors

125 Cel

2500 V

20 V

6.3 V

IXGM10N90A

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

MIEB100W1200DPFTEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

600 W

171 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

720 ns

35

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

180 ns

UL RECOGNIZED

IXGX82N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

260 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

1300 ns

1045 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

109 ns

IXGK100N170

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

285 ns

MIXG240W1200TEH-PC

Littelfuse

IXYT55N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

650 W

175 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

910 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

53 ns

IXGP15N100B

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

MG12150S-DEN2MM

Littelfuse

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

610 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

LGD8209TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

94 W

12 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

175 Cel

SILICON

445 V

-55 Cel

15 V

2 V

SINGLE

R-PSSO-G2

COLLECTOR

IXDH30N120AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

50 A

PLASTIC/EPOXY

MOTOR CONTROL

130 ns

THROUGH-HOLE

RECTANGULAR

1

100 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

75 ns

IXDN55N120

Littelfuse

N-CHANNEL

SINGLE

NO

450 W

100 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

570 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

170 ns

UL RECOGNIZED

T0160NB45A

Littelfuse

IXGA30N60C3C1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AA

e3

10

260

37 ns

MG1250S-BA1MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

80 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

615 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

MII145-12A3

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

735 W

160 A

UNSPECIFIED

MOTOR CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

690 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

160 ns

UL RECOGNIZED

IXGM20N80

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

800 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGP28N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

190 W

75 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

870 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

46 ns

MITH225PF1200YI

Littelfuse

IXBK75N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

110 A

PLASTIC/EPOXY

POWER CONTROL

6 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

478 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

66 ns

MG1750S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

450 ns

UL RECOGNIZED

IXGM10N60

Littelfuse

N-CHANNEL

NO

100 W

20 A

200 ns

1500 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXYK100N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

225 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

125 ns

IXXK100N75B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

426 ns

3

FLANGE MOUNT

175 Cel

SILICON

750 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

67 ns

MID200-12A4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

270 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

700 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

IXGA36N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

GULL WING

RECTANGULAR

1

1000 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

43 ns

IXA12IF1200TC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

MG12450WB-BN2MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

680 ns

11

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

MG1775S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

450 ns

UL RECOGNIZED

MG06300D-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

UL RECOGNIZED

IXYF30N170CV1

Littelfuse

IXGP2N100

Littelfuse

N-CHANNEL

SINGLE

NO

1.1 W

4 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

100 ns

IXGD28N90B-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

900 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXYN82N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

295 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

4.5 V

UPPER

R-PUFM-X4

ISOLATED

119 ns

UL RECOGNIZED

T0800EB45G

Littelfuse

N-CHANNEL

6400 W

800 A

Insulated Gate BIP Transistors

125 Cel

4500 V

20 V

LGB18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

IXGM20N50A

Littelfuse

N-CHANNEL

NO

150 W

40 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGA15N120B2

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

565 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXBA10N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

GULL WING

RECTANGULAR

1

1950 ns

2

SMALL OUTLINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

376 ns

MG0675S-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

310 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.