Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGT25N160	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		526 ns	2	SMALL OUTLINE		150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	283 ns
IXGH20N90A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH40N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	140 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		1040 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				67 ns
MIXA30W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED							110 ns	UL RECOGNIZED
IXYH24N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	240 W	46 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		215 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	10	260	60 ns
IXYX100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	225 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		358 ns	3	IN-LINE		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSIP-T3		COLLECTOR							65 ns
IXGH20N50U1	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH30N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	94 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				56 ns
IXGH56N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	330 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1	550 ns	625 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	68 ns
IXGH20N120B	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			43 ns
MMIX1G120N120A3V1	Littelfuse	N-CHANNEL		YES	400 W	220 A												Insulated Gate BIP Transistors	150 Cel		1200 V		20 V		5 V
IXGH50N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	75 A	PLASTIC/EPOXY	POWER CONTROL		4.2 V	THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	55 ns
IXXH30N65B4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	70 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		206 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				65 ns
IXGH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXBT28N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		60 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		2260 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				71 ns
IXGH60N50A	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
MIXA40W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	195 W	60 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
IXYH20N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		132 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	51 ns
IXGH48N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	47 ns
IXGH40N50	Littelfuse	N-CHANNEL		NO	250 W	75 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH24N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL		4.2 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	51 ns
IXBT20N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXBF42N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		950 ns	3	IN-LINE		150 Cel	SILICON	3000 V	-55 Cel	25 V		5 V		SINGLE	R-PSIP-T3		ISOLATED							652 ns
IXBT15N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		25 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		2260 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				63 ns
IXGH36N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	96 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGH40N30A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	120 ns	370 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
IXXH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
IXGT30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	45 ns
IXGT50N60C2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		230 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
IXYH30N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	416 W	66 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		296 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	71 ns
IXXH40N65C4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	110 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		142 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				71 ns
IXYH30N170CV1	Littelfuse
IXGT28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	320 ns	590 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	63 ns
MIXA225PF1200TSF	Littelfuse				1100 W	360 A				2.1 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V
IXGH48N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	47 ns
IXGH28N60D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT			SILICON						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3	10	260
IXXH40N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	455 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		252 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	67 ns
MIXA600CF650TSF	Littelfuse				1750 W	720 A				1.8 V			1					Insulated Gate BIP Transistors	125 Cel		650 V		20 V
IXGH40N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	220 ns	600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
IXBF28N300	Littelfuse
IXGH20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	162 ns
IXGT60N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		198 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	54 ns
IXYH10N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	36 A	PLASTIC/EPOXY	POWER CONTROL		4.1 V	THROUGH-HOLE	RECTANGULAR	1		260 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				21 ns
IXYH20N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	36 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXYH20N65B3	Littelfuse	N-CHANNEL	SINGLE	NO	230 W	58 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		271 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				39 ns
IXGT35N120B	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	GULL WING	RECTANGULAR	1	320 ns	340 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	77 ns
IXYH40N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	105 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		237 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	81 ns
IXGH22N50C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	44 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.