Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGT20N120B	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
MIXA10W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	65 W	17 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V	-40 Cel	20 V			UPPER	R-PUFM-X24		ISOLATED							110 ns	UL RECOGNIZED
IXGH20N120	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		1250 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260	57 ns
IXGT50N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		550 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	48 ns
IXGH60N50	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V	5 V	Tin/Lead (Sn/Pb)								e0
IXBF16N360	Littelfuse
IXGH28N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	600 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGT28N90B	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	220 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	65 ns
IXYH40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				64 ns
IXGT20N100	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	700 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	30 ns
IXGH32N100A3	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		1170 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	75 ns	UL RECOGNIZED
IXYH12N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	THROUGH-HOLE	RECTANGULAR	1		333 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				32 ns
MIXA80WB1200TEH	Littelfuse	N-CHANNEL	COMPLEX	NO	390 W	120 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXGH15N120C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-247AD	e0			43 ns
IXYH16N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	38 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		541 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				39 ns
IXGH22N170	Littelfuse	N-CHANNEL	SINGLE	NO		44 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		150 Cel	SILICON	1700 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	105 ns
IXBF10N300C	Littelfuse
IXBF9N160	Littelfuse	N-CHANNEL	SINGLE	NO	70 W	7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1600 V		20 V	8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			260 ns
IXGH32N50BU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
IXYH120N65B3	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	340 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		422 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				60 ns
MIXA300W1200TFH	Littelfuse				1500 W	465 A				2.1 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V
IXGT28N30A	Littelfuse	N-CHANNEL	SINGLE	YES		56 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		150 ns	2	SMALL OUTLINE		150 Cel	SILICON	300 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXYH75N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	175 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		179 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				90 ns
IXYH8N250C	Littelfuse	N-CHANNEL	SINGLE	NO	280 W	29 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		266 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				16 ns
IXGT64N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1	150 ns	226 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	66 ns
IXXH110N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				65 ns
MIXA450PF1200TSF	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2200 W	450 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		350 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X11		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns
IXGH32N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	42 ns
MIXA60HU1200VA	Littelfuse
IXGT32N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXYX100N65C3D1	Littelfuse
IXYH120N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	260 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1		216 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
MIXA600PF650TSF	Littelfuse				1750 W	720 A				1.8 V			1					Insulated Gate BIP Transistors	175 Cel		650 V		20 V
IXGT45N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	1400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	96 ns
IXGH28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	590 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	63 ns
IXGH80N40B2	Littelfuse	N-CHANNEL	SINGLE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT		150 Cel	SILICON	400 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	38 ns
IXGT24N60C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	48 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	110 ns	130 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST SWITCHING	TO-268AA	e3	10	260	15 ns
IXBT28N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE		150 Cel	SILICON	1700 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
IXGH24N50BU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
IXGT50N50B	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE		150 Cel	SILICON	500 V				PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA				50 ns
IXGT35N120C	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		480 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e0			86 ns
IXBT20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXGH30N50A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		30 V	5 V	Tin/Lead (Sn/Pb)								e0
IXGH30N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
IXGH42N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	223 W	250 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	120 ns	229 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	43 ns
IXGH32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T4		COLLECTOR			TO-247AD	e3	10	260	42 ns
MIXA100W1200TEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	500 W	155 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V	-40 Cel	20 V			UPPER	R-XUFM-X35		ISOLATED							110 ns	UL RECOGNIZED
IXYH50N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	100 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	96 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.