Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
480 ns |
3 |
IN-LINE |
SILICON |
1200 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
86 ns |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
225 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
570 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
455 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
8 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
180 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
200 W |
50 A |
200 ns |
3000 ns |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
30 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
58 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
885 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
122 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
260 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1300 ns |
1045 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
109 ns |
|||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1360 W |
310 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
88 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
220 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
357 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
88 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1360 W |
375 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
850 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
78 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
200 W |
34 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
450 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-263AB |
e3 |
10 |
260 |
120 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
50 A |
METAL |
POWER CONTROL |
4 V |
PIN/PEG |
ROUND |
1 |
1520 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
MATTE TIN |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-204AE |
e3 |
350 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
700 ns |
900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-263AB |
e3 |
10 |
260 |
100 ns |
||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
915 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1400 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e1 |
66 ns |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1850 W |
600 A |
CERAMIC, METAL-SEALED COFIRED |
2.65 V |
UNSPECIFIED |
ROUND |
1 |
2540 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
1020 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
700 ns |
900 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6400 W |
1000 A |
CERAMIC, METAL-SEALED COFIRED |
2.97 V |
UNSPECIFIED |
RECTANGULAR |
1 |
6800 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
3300 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
3500 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
15200 W |
1290 A |
CERAMIC, METAL-SEALED COFIRED |
4 V |
UNSPECIFIED |
ROUND |
1 |
6400 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
4700 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
34 A |
METAL |
POWER CONTROL |
3.5 V |
PIN/PEG |
ROUND |
1 |
1900 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
700 ns |
900 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
915 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1400 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-264AA |
e1 |
66 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
34 A |
METAL |
POWER CONTROL |
4 V |
PIN/PEG |
ROUND |
1 |
1450 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
145 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
760 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
NICKEL |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
112 ns |
UL RECOGNIZED |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
700 ns |
900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-263AB |
e3 |
10 |
260 |
100 ns |
||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
50 A |
METAL |
POWER CONTROL |
3.5 V |
PIN/PEG |
ROUND |
1 |
1670 ns |
2 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
1000 V |
20 V |
5 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
350 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
190 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
PURE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-263AB |
43 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
2590 W |
840 A |
CERAMIC, METAL-SEALED COFIRED |
2.65 V |
UNSPECIFIED |
ROUND |
1 |
2550 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
1100 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
PURE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
43 ns |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
362 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e1 |
74 ns |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
7100 W |
600 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
6900 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
5000 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
1000 ns |
900 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED, FAST |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
570 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY |
e1 |
170 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
10600 W |
900 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
6600 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
4600 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1070 W |
380 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1240 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
86 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
10600 W |
900 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
6600 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
4600 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
4600 W |
385 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
6800 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
4900 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
280 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
PURE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-263AB |
43 ns |
||||||||||||||||||||||
Littelfuse |
595 W |
130 A |
3.9 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3000 W |
258 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
7200 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
5200 ns |
||||||||||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
|||||||||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
700 ns |
900 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED, FAST |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2750 W |
425 A |
CERAMIC, METAL-SEALED COFIRED |
2.95 V |
UNSPECIFIED |
ROUND |
1 |
6100 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
3300 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
3600 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
1000 ns |
900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED, FAST |
TO-263AB |
e3 |
10 |
260 |
100 ns |
||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
4400 W |
1440 A |
CERAMIC, METAL-SEALED COFIRED |
2.65 V |
UNSPECIFIED |
ROUND |
1 |
3000 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
1350 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e1 |
43 ns |
|||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
16000 W |
1375 A |
CERAMIC, METAL-SEALED COFIRED |
5.2 V |
UNSPECIFIED |
ROUND |
1 |
6400 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
6500 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
4500 ns |
||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
6400 W |
1000 A |
CERAMIC, METAL-SEALED COFIRED |
2.97 V |
UNSPECIFIED |
ROUND |
1 |
6800 ns |
3 |
DISK BUTTON |
125 Cel |
SILICON |
3300 V |
-40 Cel |
20 V |
END |
O-CEDB-X3 |
3500 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.