Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGX35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

86 ns

MWI25-12A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

225 W

50 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

6

570 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

IXRH50N120

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

180 ns

IXGM25N90

Littelfuse

N-CHANNEL

NO

200 W

50 A

200 ns

3000 ns

Insulated Gate BIP Transistors

150 Cel

900 V

30 V

5 V

Tin/Lead (Sn/Pb)

e0

IXA33IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXGK120N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

122 ns

IXGK82N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

260 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

1300 ns

1045 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

109 ns

IXYK110N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

310 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

88 ns

IXYN110N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

220 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

1

357 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

88 ns

UL RECOGNIZED

IXYK110N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

375 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

78 ns

IXDA20N120AS

Littelfuse

N-CHANNEL

SINGLE

YES

200 W

34 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

450 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

120 ns

IXGM25N100A

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

50 A

METAL

POWER CONTROL

4 V

PIN/PEG

ROUND

1

1520 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1000 V

20 V

5 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

HIGH SPEED

TO-204AE

e3

350 ns

IXGA12N100A

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

IXGX28N140B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

915 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e1

66 ns

T0600NC17A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1850 W

600 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2540 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1020 ns

IXGP12N100

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

T1000EC33G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

RECTANGULAR

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

T1290BF65A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15200 W

1290 A

CERAMIC, METAL-SEALED COFIRED

4 V

UNSPECIFIED

ROUND

1

6400 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4700 ns

IXGM17N100

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

34 A

METAL

POWER CONTROL

3.5 V

PIN/PEG

ROUND

1

1900 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1000 V

20 V

5 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

300 ns

IXGP12N100A

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXGK28N140B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

915 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-264AA

e1

66 ns

IXGM17N100A

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

34 A

METAL

POWER CONTROL

4 V

PIN/PEG

ROUND

1

1450 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1000 V

20 V

5 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

HIGH SPEED

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

300 ns

IXGN82N120B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

145 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

760 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

112 ns

UL RECOGNIZED

IXGA12N100

Littelfuse

N-CHANNEL

SINGLE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

700 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-263AB

e3

10

260

100 ns

IXGM25N100

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

50 A

METAL

POWER CONTROL

3.5 V

PIN/PEG

ROUND

1

1670 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1000 V

20 V

5 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

350 ns

IXGA16N60C2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

43 ns

T0840NC17E

Littelfuse

N-CHANNEL

SINGLE

YES

2590 W

840 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

2550 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1100 ns

IXGP16N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

43 ns

IXGX32N170AH1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

362 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

74 ns

T0600AF65G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7100 W

600 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6900 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

5000 ns

IXGP12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1000 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXDR30N120

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

e1

170 ns

T0900AF65E

Littelfuse

N-CHANNEL

SINGLE

YES

10600 W

900 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6600 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4600 ns

IXYN140N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1070 W

380 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

1

1240 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

86 ns

UL RECOGNIZED

T0900DF65A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10600 W

900 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6600 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4600 ns

T0385HF65E

Littelfuse

N-CHANNEL

SINGLE

YES

4600 W

385 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4900 ns

IXGA16N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

280 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

43 ns

IXGN82N120C3H1

Littelfuse

595 W

130 A

3.9 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

T0258HF65G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3000 W

258 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

7200 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

5200 ns

T1890BF65

Littelfuse

F1400NC180

Littelfuse

IXGP12N100AU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

T0425VC33G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2750 W

425 A

CERAMIC, METAL-SEALED COFIRED

2.95 V

UNSPECIFIED

ROUND

1

6100 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3600 ns

IXGA12N100U1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1000 ns

900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

HIGH SPEED, FAST

TO-263AB

e3

10

260

100 ns

T1440VC17E

Littelfuse

N-CHANNEL

SINGLE

YES

4400 W

1440 A

CERAMIC, METAL-SEALED COFIRED

2.65 V

UNSPECIFIED

ROUND

1

3000 ns

3

DISK BUTTON

125 Cel

SILICON

1700 V

-40 Cel

20 V

END

O-CEDB-X3

1350 ns

IXGX50N60C2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e1

43 ns

T1375DF65E

Littelfuse

N-CHANNEL

SINGLE

YES

16000 W

1375 A

CERAMIC, METAL-SEALED COFIRED

5.2 V

UNSPECIFIED

ROUND

1

6400 ns

3

DISK BUTTON

125 Cel

SILICON

6500 V

-40 Cel

20 V

END

O-CEDB-X3

4500 ns

T1000TC33E

Littelfuse

N-CHANNEL

SINGLE

YES

6400 W

1000 A

CERAMIC, METAL-SEALED COFIRED

2.97 V

UNSPECIFIED

ROUND

1

6800 ns

3

DISK BUTTON

125 Cel

SILICON

3300 V

-40 Cel

20 V

END

O-CEDB-X3

3500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.