Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXYT12N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	GULL WING	RECTANGULAR	1		303 ns	2	SMALL OUTLINE			175 Cel	SILICON	2500 V		-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				28 ns
IXGD40N30A-5X	Littelfuse	N-CHANNEL	SINGLE	YES			UNSPECIFIED				NO LEAD	SQUARE	1			2	UNCASED CHIP				SILICON	300 V							UPPER	S-XUUC-N2			Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
IXYQ40N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR							57 ns
IXXK160N65C4	Littelfuse	N-CHANNEL		NO	940 W	290 A												Insulated Gate BIP Transistors		175 Cel		650 V			20 V		6.5 V	TIN SILVER COPPER								e1	10	260
IXGK210N30PBT1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN FET	NO		210 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V						TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-264AA	e1	10	260	155 ns
IXGP48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXGK72N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	178 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	244 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	390 ns	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	64 ns
T1800GA45A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		1808 A	CERAMIC, METAL-SEALED COFIRED				NO LEAD	ROUND	1		4700 ns	3	DISK BUTTON			125 Cel	SILICON	4500 V							END	O-CEDB-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	6000 ns
IXEH40N120B2D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		65 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		540 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	220 ns
LGD18N45TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	9000 ns	2.85 V	GULL WING	RECTANGULAR	1	7000 ns	5400 ns	2	SMALL OUTLINE			175 Cel	SILICON	500 V	10400 ns	-55 Cel	18 V	19000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR							2920 ns	AEC-Q101
MIXG180W1200TEH-PC	Littelfuse
IXBH15N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		2260 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AD	e3	10	260	63 ns
IXBL60N360	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	417 W	92 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	THROUGH-HOLE	RECTANGULAR	1		1395 ns	3	IN-LINE			150 Cel	SILICON	3600 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		ISOLATED							730 ns
IXGA20N100A3	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	GULL WING	RECTANGULAR	1		1630 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	162 ns
MITB5WB200TMH	Littelfuse				100 W	29 A				2.2 V			2					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V
IXGX120N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	780 W	280 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		520 ns	3	IN-LINE			150 Cel	SILICON	600 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					123 ns
IXGA15N100B	Littelfuse	N-CHANNEL	SINGLE	YES		30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE			150 Cel	SILICON	1000 V		-55 Cel				Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260
MITH300PF1200LP	Littelfuse
IXYN150N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	250 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	1		330 ns	4	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					110 ns	UL RECOGNIZED
MKI50-06A7T	Littelfuse				225 W	72 A				2.4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IX150T06M-AG	Littelfuse																																				NOT SPECIFIED	NOT SPECIFIED
IXBH40N160A	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		300 W	150 Cel	SILICON	1600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH VOLTAGE BIMOSFET	TO-247AD	e3	10	260
VID130-06P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	379 W	121 A	UNSPECIFIED	MOTOR CONTROL		2.9 V	UNSPECIFIED	RECTANGULAR	1		180 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	36 ns
IXBA14N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	38 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		1910 ns	2	SMALL OUTLINE			150 Cel	SILICON	3000 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	810 ns
IXGP20N30	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT				SILICON							PURE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
IXGK50N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	95 A	PLASTIC/EPOXY	POWER CONTROL		4.2 V	THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	60 ns
IXGX50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	IN-LINE			150 Cel	SILICON	900 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR							48 ns
MG1250W-XBN2MM	Littelfuse	N-CHANNEL	COMPLEX	NO		75 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		610 ns	24	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns
IXGP48N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				47 ns
T2250AB25E	Littelfuse	N-CHANNEL			11800 W	2250 A												Insulated Gate BIP Transistors		125 Cel		2500 V			20 V		6.3 V
MG12300D-BN2MM	Littelfuse																																				NOT SPECIFIED	NOT SPECIFIED
MIXD600PF650TSF	Littelfuse
IX112T06M-AG	Littelfuse																																				NOT SPECIFIED	NOT SPECIFIED
IXGX50N60A2U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1230 ns	3	IN-LINE			150 Cel	SILICON	600 V						TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			45 ns
IXBN42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	38 A	PLASTIC/EPOXY	POWER CONTROL		6 V	UNSPECIFIED	RECTANGULAR	1		308 ns	4	FLANGE MOUNT			150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					33 ns	UL RECOGNIZED
IXGA15N120C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	190 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB	e0			43 ns
MG12105S-BA1MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		565 ns	7	FLANGE MOUNT			150 Cel	SILICON	1200 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	195 ns	UL RECOGNIZED
MG12225WB-BN2MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		325 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		680 ns	11	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X11		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	220 ns
IXYP20N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	375 W	68 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		286 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				50 ns
T0960VC17G	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2960 W	960 A	CERAMIC, METAL-SEALED COFIRED			2.65 V	UNSPECIFIED	ROUND	1		2650 ns	3	DISK BUTTON			125 Cel	SILICON	1700 V		-40 Cel	20 V				END	O-CEDB-X3									1160 ns
MIEB101W1200DPFEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	171 A	UNSPECIFIED	MOTOR CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		720 ns	19	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X19		ISOLATED							180 ns	UL RECOGNIZED
IXGM25N80	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					3000 ns				Insulated Gate BIP Transistors		150 Cel		800 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYN75N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	1		179 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED							90 ns	UL RECOGNIZED
MID75-12A3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	415 W	90 A	UNSPECIFIED	POWER CONTROL		3 V	UNSPECIFIED	RECTANGULAR	1		570 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns	UL RECOGNIZED
IXBH15N140	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	260 ns
IXGM25N80A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXXN200N60B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	200 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	UNSPECIFIED	RECTANGULAR	1		395 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					140 ns	UL RECOGNIZED
VII420-03S4	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		425 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		600 ns	11	FLANGE MOUNT				SILICON	300 V							UPPER	R-XUFM-X11		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.