Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH25N90A	Littelfuse	N-CHANNEL		NO	200 W	50 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH40N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	680 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		270 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				63 ns
IXGH60N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		198 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	54 ns
IXYH40N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	577 W	96 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		411 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	84 ns
IXGH20N80A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors	150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH75N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	175 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		179 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	90 ns
IXGH60N40B2	Littelfuse	N-CHANNEL	SINGLE	NO		80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		150 Cel	SILICON	400 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	38 ns
IXGH20N50A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT39N60B	Littelfuse	N-CHANNEL	SINGLE	YES		76 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		710 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
MIXA600AF650TSF	Littelfuse				1750 W	720 A				1.8 V			1					Insulated Gate BIP Transistors	175 Cel		650 V		20 V
IXGT32N170A	Littelfuse	N-CHANNEL	SINGLE	YES		32 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	107 ns
MMIX1G320N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		595 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		DUAL	R-PDSO-G21		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	107 ns
IXXH75N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	108 ns
IXBX28N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	62 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		3785 ns	3	IN-LINE		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					462 ns
IXBF22N300	Littelfuse
IXYX100N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	225 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1		450 ns	3	IN-LINE		175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							125 ns
MIXA10WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	60 W	17 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXXH50N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	69 ns
MMIX1G75N250	Littelfuse	N-CHANNEL	SINGLE	YES	430 W	110 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			GULL WING	RECTANGULAR	1		725 ns	21	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V		20 V		5 V		DUAL	R-PDSO-G21		ISOLATED							280 ns
IXGT32N100A3	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			GULL WING	RECTANGULAR	1		1170 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	75 ns	UL RECOGNIZED
IXGH36N60B3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
MIXA40WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	195 W	60 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXYX100N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	188 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		265 ns	3	IN-LINE		175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							122 ns
IXGT25N250HV	Littelfuse	N-CHANNEL		YES	250 W	60 A												Insulated Gate BIP Transistors	150 Cel		2500 V		20 V		5 V	MATTE TIN			1					e3	10	260
IXGT20N120	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		1250 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	57 ns
IXBT45N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		2460 ns	2	SMALL OUTLINE			SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				83 ns
MIXA61H1200ED	Littelfuse	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	290 W	85 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	4		350 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X12		ISOLATED							110 ns	UL RECOGNIZED
IXGH28N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD				46 ns
MMIX4B12N300	Littelfuse	N-CHANNEL	COMPLEX	YES	100 W	22 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	GULL WING	RECTANGULAR	4		705 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V		20 V				DUAL	R-PDSO-G9		ISOLATED							460 ns
IXBF14N300	Littelfuse
IXXX100N75B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		426 ns	3	IN-LINE		175 Cel	SILICON	750 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSIP-T3		COLLECTOR							67 ns
IXGH25N250	Littelfuse	N-CHANNEL	SINGLE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		409 ns	3	FLANGE MOUNT		150 Cel	SILICON	2500 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260	301 ns
IXGH15N120CD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	520 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e0			43 ns
IXGT22N170	Littelfuse	N-CHANNEL	SINGLE	YES		44 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
IXYX120N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	240 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		346 ns	3	IN-LINE		175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							105 ns
IXGT32N170	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		920 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	90 ns
IXYH10N170C	Littelfuse	N-CHANNEL	SINGLE	NO	280 W	36 A	PLASTIC/EPOXY	POWER CONTROL		4.1 V	THROUGH-HOLE	RECTANGULAR	1		260 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				21 ns
IXYH16N250C	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	38 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		510 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				33 ns
IXGH30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	37 ns
IXYH30N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	70 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		199 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
MIXA150W1200TEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	695 W	220 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
IXGH40N30B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
MIXA30WB1200TMI	Littelfuse
IXGH28N90B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	220 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	65 ns
IXYH24N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	44 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		215 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		AVALANCHE RATED	TO-247AD	e3	10	260	60 ns
MMIX1X200N60B3	Littelfuse
MMIX1B15N300C	Littelfuse																																		NOT SPECIFIED	NOT SPECIFIED
IXGH35N120C	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-247AD	e0			86 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.