Littelfuse Insulated Gate Bipolar Transistors (IGBT) 1,326

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXYX40N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	154 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		505 ns	3	IN-LINE		175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							43 ns
MII200-12A4	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1250 W	270 A	UNSPECIFIED	MOTOR CONTROL	3 V	UNSPECIFIED	RECTANGULAR	2		700 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns	UL RECOGNIZED
MUBW15-12A6K	Littelfuse	N-CHANNEL	COMPLEX	NO	90 W	19 A	UNSPECIFIED	POWER CONTROL	3.4 V	UNSPECIFIED	RECTANGULAR	7		350 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified			e3			90 ns	UL RECOGNIZED
MUBW35-12A7	Littelfuse	N-CHANNEL	COMPLEX	NO	225 W	50 A	UNSPECIFIED	POWER CONTROL	3.1 V	UNSPECIFIED	RECTANGULAR	7		570 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			170 ns
IXA20IF1200HB	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	38 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
IXA30PG1200DHGLB	Littelfuse
IXA40RG1200DHGLB	Littelfuse
IXBF20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1		695 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	NOT SPECIFIED	NOT SPECIFIED	608 ns
IXBH10N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	34 A	PLASTIC/EPOXY	POWER CONTROL	2.8 V	THROUGH-HOLE	RECTANGULAR	1		1950 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				376 ns
IXBT20N360HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	430 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.4 V	GULL WING	RECTANGULAR	1		1285 ns	2	SMALL OUTLINE		150 Cel	SILICON	3600 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				922 ns
IXBT2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL	3.8 V	GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	310 ns
IXBT42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	42 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1		308 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	33 ns
IXBT6N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	12 A	PLASTIC/EPOXY	POWER CONTROL	3.4 V	GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	104 ns
IXDR30N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY		e1	10	260	170 ns
IXGA20N120	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1	700 ns	780 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	1500 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	48 ns
IXGF32N170	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	44 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	500 ns	920 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1			90 ns
IXGH16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			43 ns
IXGH20N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	180 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		1530 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	66 ns
IXGH25N160	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1		526 ns	3	FLANGE MOUNT		150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	283 ns
IXGH36N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	46 ns
IXGH36N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGK400N30A3	Littelfuse	N-CHANNEL	SINGLE	NO	1000 W	400 A	PLASTIC/EPOXY	POWER CONTROL	1.15 V	THROUGH-HOLE	RECTANGULAR	1		555 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	100 ns
IXGN200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	300 A	PLASTIC/EPOXY	POWER CONTROL	1.5 V	UNSPECIFIED	RECTANGULAR	1	300 ns	493 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	750 ns	5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED							127 ns	UL RECOGNIZED
IXGP16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB				43 ns
IXGT10N170	Littelfuse	N-CHANNEL	SINGLE	YES	110 W	20 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	300 ns
IXGT16N170	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	90 ns
IXXH100N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	190 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	95 ns
IXXH75N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	160 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	108 ns
IXXK200N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	480 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	135 ns
IXXN340N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	520 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	1		346 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					119 ns	UL RECOGNIZED
IXYH16N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL	3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				35 ns
IXYH30N170C	Littelfuse	N-CHANNEL	SINGLE	NO	937 W	100 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		327 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				49 ns
IXYH50N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns
IXYH75N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	170 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	83 ns
IXYH8N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	280 W	29 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		328 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				24 ns
IXYK100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	225 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		358 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				65 ns
IXYK110N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	340 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		520 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				95 ns
IXYK140N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	310 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		300 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	122 ns
IXYN100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	170 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	UNSPECIFIED	RECTANGULAR	1		360 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					68 ns	UL RECOGNIZED
IXYN110N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	275 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	UNSPECIFIED	RECTANGULAR	1		850 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED							78 ns	UL RECOGNIZED
IXYN80N90C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	115 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	1		201 ns	4	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED							134 ns	UL RECOGNIZED
IXYP60N65A5	Littelfuse	N-CHANNEL	SINGLE	NO	395 W	134 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		5.8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				60 ns
IXYT80N90C3	Littelfuse	N-CHANNEL	SINGLE	YES	830 W	165 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		201 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	134 ns
IXYX200N65B3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN RESISTOR	NO	1560 W	410 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		700 ns	3	IN-LINE		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSIP-T3		COLLECTOR							170 ns
IXYX25N250CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		575 ns	3	IN-LINE		175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							51 ns
IXYX50N170C	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	178 A	PLASTIC/EPOXY	POWER CONTROL	3.7 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	IN-LINE		175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							62 ns
MID100-12A3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	135 A	UNSPECIFIED	POWER CONTROL	3 V	UNSPECIFIED	RECTANGULAR	1		700 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns	UL RECOGNIZED
MIXA20WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	100 W	28 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.