Onsemi Insulated Gate Bipolar Transistors (IGBT) 792

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NGTB10N60FG	Onsemi	N-CHANNEL		NO	40 W	20 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGA90N33ATDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		90 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			60 ns
NGTB25N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
AFGHL40T120RHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		7.3 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			66 ns	AEC-Q101
FGA180N33ATTU	Onsemi	N-CHANNEL	SINGLE	NO		180 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		362 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			101 ns
ISL9V5036S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
NGTB30N135IHRWG	Onsemi	N-CHANNEL		NO	394 W	60 A												Insulated Gate BIP Transistors	175 Cel		1350 V			20 V		6.5 V	MATTE TIN								e3
FGH40T65UQDF-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.67 V	THROUGH-HOLE	RECTANGULAR	1		314 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-247AB	e3			52 ns
NGTB50N60FWG	Onsemi	N-CHANNEL		NO	223 W	100 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	TIN								e3
NGTB75N60SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247AD	e3			150 ns
NGTB40N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			178 ns
NGTB30N120FL2WG	Onsemi																										MATTE TIN								e3
NGTB30N140IHR3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	60 A	PLASTIC/EPOXY	POWER AMPLIFIER		1.95 V	THROUGH-HOLE	RECTANGULAR	1		423 ns	3	FLANGE MOUNT		175 Cel	SILICON	1400 V		-40 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-247	e3
NGTB40N65IHRWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	405 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		316 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247AD	e3
NGTB40N60L2WG	Onsemi	N-CHANNEL		NO	417 W	80 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGB20N60SFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
NGTB40N60FL2WG	Onsemi	N-CHANNEL		NO	366 W	80 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
SGP23N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			55 ns
ISL9V2040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2780 ns
FGH4L50T65SQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		169.6 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V		SINGLE	R-PSFM-T4					TO-247		NOT SPECIFIED	NOT SPECIFIED	44.8 ns
AFGHL40T120RL	Onsemi
FGD3440G2	Onsemi
FGH4L50T65MQDC50	Onsemi
FGH4L75T65MQDC50	Onsemi

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.