Onsemi Insulated Gate Bipolar Transistors (IGBT) 792

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH40N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	17 ns	132 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	37 ns
FGH40T120SMD	Onsemi	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			25 V		7.5 V	Matte Tin (Sn) - annealed								e3	NOT SPECIFIED	NOT SPECIFIED
HGTG11N120CND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		43 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			33 ns
FGH40N60SMDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	17 ns	132 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	37 ns
FGH40N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	110 ns
FGH40T120SMDL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	555 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		542 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			90 ns
FGH40T120SMD-F155	Onsemi	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			25 V		7.5 V										NOT SPECIFIED	NOT SPECIFIED
FGH60N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	68 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	59 ns
HGTD1N120BNS9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	GULL WING	RECTANGULAR	1	370 ns	333 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260	24 ns
FGH40N60SMDF_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	20 ns	123 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	50 ns	AEC-Q101
FGH40N60SMDF-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	20 ns	123 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3			50 ns
FGH60N60SMD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	60 ns		THROUGH-HOLE	RECTANGULAR	1	20 ns	139 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			66 ns	AEC-Q101
HGTG30N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		238 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			35 ns
HGT1S10N120BNST	Onsemi	N-CHANNEL	SINGLE	YES	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	GULL WING	RECTANGULAR	1	200 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	32 ns
AFGHL50T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		160.8 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	32 ns	AEC-Q101
FGA25N120ANTDTU-F109	Onsemi	N-CHANNEL		NO	312 W	50 A			90 ns					180 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		7.5 V	Matte Tin (Sn) - annealed								e3
FGD5T120SH	Onsemi	N-CHANNEL	SINGLE	YES	69 W	10 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		3.6 V	GULL WING	RECTANGULAR	1		159.6 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V		-55 Cel	25 V		4.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	245	44.8 ns
FGL40N120ANDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		64 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-264AA	e3			45 ns
FGH40N60SMD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	36.4 ns		THROUGH-HOLE	RECTANGULAR	1	81 ns	172.5 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	43.7 ns	AEC-Q101
HGTG20N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			28 ns
FGH75T65SHDTLN4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T4					TO-247
FGA25N120ANTDTU	Onsemi	N-CHANNEL		NO	312 W	25 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		7.5 V	MATTE TIN								e3
HGTG30N60C3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		63 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		550 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			85 ns
NGTB40N120FL3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	454 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		326 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-247	e3			51 ns
NXH50C120L2C2ES1G	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		616 ns	26	IN-LINE		150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED							248 ns
FGD3040G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23.2 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			14 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260
FGD3040G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	41 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	450 V	11000 ns	-55 Cel	10 V	25000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				TO-252AA	e3	30	260	2800 ns	AEC-Q101
FGH40N60SFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	90 ns	170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			108 ns
ISL9V5036P3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	360 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	2800 ns
HGTP10N120BN	Onsemi	N-CHANNEL	SINGLE	NO	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	330 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			32 ns
FGH40N60SFDTU-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	54 ns	192 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB	e3			60 ns	AEC-Q101
FGH40N60SFDTU_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	54 ns	192 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3			60 ns	AEC-Q101
FGD3040G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	41 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns	1.85 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-55 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	2800 ns	AEC-Q101
FGAF40N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	115 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	17 ns	132 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		ISOLATED				e3	NOT SPECIFIED	NOT SPECIFIED	37 ns
HGTG20N60B3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			45 ns
HGTG10N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		35 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		330 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			32 ns
SGL160N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		160 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		262 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e3			150 ns
ISL9V3040D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	450 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	2800 ns
NGTB20N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	40 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
HGT1S10N120BNS	Onsemi	N-CHANNEL	SINGLE	YES	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	GULL WING	RECTANGULAR	1	200 ns	330 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	32 ns
FGL60N100BNTDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		760 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-264AA	e3			460 ns
NGTB50N120FL2WG	Onsemi	N-CHANNEL		NO	535 W	100 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	MATTE TIN								e3
FGH80N60FD2TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	201 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	74 ns
FGL60N100BNTD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		760 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-264AA	e3			460 ns
FPF2C110BI07AS2	Onsemi	N-CHANNEL	COMPLEX	NO	158 W	40 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		152 ns	30	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.1 V		UPPER	R-XUFM-X30		ISOLATED							49 ns
FGD3N60LSDTM-T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		1.5 V	GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	25 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-252AA				85 ns
FGD4536TM-F065	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W		PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.8 V	GULL WING	RECTANGULAR	1		292 ns	2	SMALL OUTLINE		150 Cel	SILICON	360 V		-55 Cel	30 V		4 V		DUAL	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	26 ns
NGTB30N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		596 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			167 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.