Onsemi Insulated Gate Bipolar Transistors (IGBT) 792

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGPF15N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

12.8 ns

69.8 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

18.8 ns

HGTG30N60A4

Onsemi

N-CHANNEL

SINGLE

NO

463 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

70 ns

238 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

35 ns

ISL9V5045S3ST-F085C

Onsemi

Matte Tin (Sn) - annealed

1

e3

NGTB35N60FL2WG

Onsemi

N-CHANNEL

YES

300 W

70 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

HGT1S20N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

52 ns

NGB8207ABNT4G

Onsemi

N-CHANNEL

YES

165 W

20 A

2700 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

365 V

15 V

2 V

MATTE TIN

e3

FGY75T95SQDT

Onsemi

N-CHANNEL

SINGLE

NO

434 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.11 V

THROUGH-HOLE

RECTANGULAR

1

198.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

950 V

-55 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

89.6 ns

MGP20N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

8000 ns

SGL160N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

160 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

262 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-264

150 ns

FGH80N60FD2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

74 ns

FGP20N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

155 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

29 ns

MMG05N60DT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

301 ns

4

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

15 V

6 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

TO-261

e0

SGL160N60UF

Onsemi

N-CHANNEL

SINGLE

NO

250 W

160 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

262 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

TO-264AA

150 ns

SGS5N150UF

Onsemi

N-CHANNEL

SINGLE

NO

50 W

10 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

5.5 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

150 Cel

SILICON

1500 V

-55 Cel

20 V

170 ns

4 V

SINGLE

R-PSFM-T3

ISOLATED

HIGH SPEED SWITCHING

TO-220AB

25 ns

FGA40N65SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

17 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

FGA6065ADF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

120 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

99 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

FAST SWITCHING

e3

92.8 ns

FGA60N65SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

70 ns

THROUGH-HOLE

RECTANGULAR

1

68 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

FGB3040G2-F085

Onsemi

N-CHANNEL

YES

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGB3040G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

166 W

26.9 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.75 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

3000 ns

AEC-Q101

FGB40T65SPD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

51 ns

2

SMALL OUTLINE

SILICON

650 V

-55 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

49 ns

AEC-Q101

FGB40T65SPD_F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

267 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

GULL WING

RECTANGULAR

1

51 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

RC-IGBT

TO-263AB

e3

49 ns

AEC-Q101

FGD3245G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

8100 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

3500 ns

AEC-Q101

FGH60T65SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

85 ns

FGH60T65SQD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

126.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

36.8 ns

FGP3440G2-F085

Onsemi

N-CHANNEL

NO

166 W

26.9 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

e3

NOT SPECIFIED

NOT SPECIFIED

ISL9V5036S3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

200 W

46 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

13600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

12 V

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

2800 ns

NGTB50N65FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

MATTE TIN

e3

NGTG25N120FL2WG

Onsemi

N-CHANNEL

SINGLE

NO

385 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

178 ns

NVG800A75L4DSC

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

YES

800 A

UNSPECIFIED

POWER CONTROL

1.55 V

UNSPECIFIED

RECTANGULAR

2

855 ns

15

MICROELECTRONIC ASSEMBLY

175 Cel

SILICON

750 V

-40 Cel

20 V

6.2 V

UNSPECIFIED

R-XXMA-X15

347 ns

TIG065E8-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

SGF5N150UFTU

Onsemi

N-CHANNEL

SINGLE

NO

62.5 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

20 V

4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

25 ns

PCGA200T65NF8

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.9 V

NO LEAD

SQUARE

1

332 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

S-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

300 ns

AEC-Q101

HGT1S11N120CNS

Onsemi

N-CHANNEL

SINGLE

YES

298 W

43 A

PLASTIC/EPOXY

POWER CONTROL

16 ns

2.4 V

GULL WING

RECTANGULAR

1

400 ns

550 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSSO-G2

COLLECTOR

AVALANCHE RATED, LOW CONDUCTION LOSS

TO-263AB

33 ns

AFGB30T65SQDN-BW

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

78.7 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263

e3

30

260

33.6 ns

AEC-Q101

TIG067SS-TL-2W

Onsemi

MATTE TIN

1

e3

30

260

NXH80T120L3Q0P3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

MGW12N120

Onsemi

N-CHANNEL

SINGLE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

153 ns

NXH75M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

83 W

59 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

146 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

72 ns

SGF80N60UF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

85 ns

HGTP7N60A4

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

17 ns

NGD15N41ACLT4G

Onsemi

N-CHANNEL

YES

107 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

15 V

1.9 V

MATTE TIN

1

e3

30

260

PCFG60T120SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.95 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

S-XUUC-N2

HIGH SPEED SWITCHING

NOT SPECIFIED

NOT SPECIFIED

NXH100B120H3Q0PG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

186 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

291 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

61 ns

NGB15N41CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5700 ns

PCFG60T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N

NGTD17T65F2WP

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

FGL12040WD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

391 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.9 V

THROUGH-HOLE

RECTANGULAR

1

523 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

25 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-264AA

e3

105 ns

NXH80T120L2Q0P2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.