Onsemi Insulated Gate Bipolar Transistors (IGBT) 792

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH50N6S2D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3			28 ns
ISL9V3040S3ST-F085C	Onsemi	N-CHANNEL	SINGLE	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	.007 ns	1.65 V	GULL WING	RECTANGULAR	1	.015 ns	7.6 ns	2	SMALL OUTLINE		175 Cel	SILICON	400 V	.011 ns	-55 Cel	10 V	.03 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260	2.8 ns	AEC-Q101
ISL9V3040D3ST-F085C	Onsemi	N-CHANNEL	SINGLE	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	.007 ns	1.65 V	GULL WING	RECTANGULAR	1	.015 ns	.0076 ns	2	SMALL OUTLINE		175 Cel	SILICON	400 V	.011 ns	-55 Cel	10 V	.03 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				TO-252AA	e3	30	260	.0028 ns	AEC-Q101
ISL9V3040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-55 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	2800 ns	AEC-Q101
FGY75T120SWD	Onsemi
NVH680S75L4SPB	Onsemi
FGH75T65UPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL	71 ns		THROUGH-HOLE	RECTANGULAR	1	33 ns	197 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V			20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			87 ns	AEC-Q101
FPF1C2P5MF07AM	Onsemi	N-CHANNEL	COMPLEX	NO	231 W	39 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	2			24	FLANGE MOUNT		150 Cel	SILICON	620 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X24										UL APPROVED
HGTG7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			17 ns
NGTB40N120S3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	454 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					TO-247	e3
FPF2G120BF07ASP	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	156 W	40 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	3		165 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		6.8 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
ISL9V2040D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	2780 ns
ISL9V3036S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
FGY40T120SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				HIGH SWITCHING SPEED	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	95 ns
FGY75T120SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	790 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		452 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	136 ns
HGTD1N120BNS	Onsemi	N-CHANNEL	SINGLE	YES	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	GULL WING	RECTANGULAR	1	370 ns	333 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns			SINGLE	R-PSSO-G2		COLLECTOR		AVALANCHE RATED	TO-252AA				24 ns
NGTB25N120FL2WG	Onsemi	N-CHANNEL		NO	385 W	50 A												Insulated Gate BIP Transistors	175 Cel		1200 V			20 V		6.5 V	MATTE TIN								e3
NGTB30N120IHSWG	Onsemi	N-CHANNEL		NO	192 W	60 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V	TIN								e3
AFGB40T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1			2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260		AEC-Q101
FGA180N33ATDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		180 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		362 ns	3	FLANGE MOUNT		150 Cel	SILICON	330 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS		e3			101 ns
FGA50N100BNTDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	50 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1	250 ns	760 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V			25 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			460 ns
FGB3440G2-F085	Onsemi	N-CHANNEL		YES	166 W	26.9 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		390 V			12 V		2.2 V	Matte Tin (Sn) - annealed			1					e3	30	260
FGH20N60SFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	48 ns	123 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			28 ns
FGH60N60SFDTU-F085	Onsemi	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	62 ns	166 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247	e3			76 ns	AEC-Q101
FGH75N60UFTU	Onsemi	N-CHANNEL		NO	452 W	150 A								80 ns				Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	MATTE TIN								e3
FGHL50T65SQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		159 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			40.4 ns
FGY100T120RWD	Onsemi
FGY75N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL	73 ns		THROUGH-HOLE	RECTANGULAR	1	29 ns	161 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSIP-T3			Not Qualified	LOW CONDUCTION LOSS		e3			76 ns
HGTG12N60C3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		24 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			30 ns
HGTP5N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		21 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			35 ns
NGTB50N60FLWG	Onsemi	N-CHANNEL		NO	223 W	100 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
AFGB40T65RQDN	Onsemi
AFGHL50T65SQ	Onsemi	N-CHANNEL	SINGLE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FGA20S120M	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		865 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V						TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			301 ns
FGB3245G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	3500 ns	AEC-Q101
FGH15T120SMD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		534 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V			25 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB		NOT SPECIFIED	NOT SPECIFIED	74 ns
FGH40T120SQDNL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	454 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		372 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247				80 ns
FGH80N60FDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	201 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3			74 ns
FGL40N120AND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	64 A	PLASTIC/EPOXY	MOTOR CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-264				45 ns
HGTG27N120BN	Onsemi	N-CHANNEL	SINGLE	NO		72 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS, AVALANCHE RATED	TO-247	e3			42 ns
HGTG5N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		21 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			35 ns
NGTB10N60R2DT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	72 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE		2.3 V	GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	188 ns
NGTB40N120FLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			172 ns
NGTB40N120SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	535 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		564 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			154 ns
NXH160T120L2Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	500 W	181 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	4		435 ns	56	FLANGE MOUNT		125 Cel	SILICON	1200 V		-40 Cel	20 V		6.4 V		UPPER	R-XUFM-X56		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	150 ns
AFGB30T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-55 Cel	30 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263	e3	30	260	33.6 ns	AEC-Q101
FGA15N120ANTDTU-F109	Onsemi	N-CHANNEL		NO	186 W	30 A								180 ns				Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		8.5 V
FGD3440G2-F085	Onsemi	N-CHANNEL		YES	166 W	26.9 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		450 V			14 V		2.2 V	Matte Tin (Sn) - annealed			1					e3	30	260

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.