Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
11000 ns |
-55 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
187 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
TIN |
e3 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
329 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
TO-264AA |
NOT SPECIFIED |
NOT SPECIFIED |
119 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
130 W |
10 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
-40 Cel |
12 V |
2.2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
2780 ns |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
298 W |
35 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
15 ns |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
330 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
450 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247 |
32 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
140 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
228 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
118 ns |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
298 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
16 ns |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
550 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
40 ns |
-55 Cel |
20 V |
680 ns |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
AVALANCHE RATED, LOW CONDUCTION LOSS |
TO-247 |
33 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
85 ns |
205 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
17 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
250 W |
46 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
420 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
2800 ns |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196.4 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
73.6 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
167 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
350 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
2800 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
267 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
48 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
7.5 V |
20 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
56 ns |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
126 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
32 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.2 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
500 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2500 ns |
AEC-Q101 |
|||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
306 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
298 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7.5 V |
SINGLE |
R-PSFM-T4 |
TO-247 |
61 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
440 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
187 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
70 ns |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
81 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
700 V |
-55 Cel |
20 V |
7.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
56 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
298 W |
120 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
405 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
316 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
e3 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
385 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||||||||
Onsemi |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
64 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1250 V |
25 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
146 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
8.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
7.4 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
85.6 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
7.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
51.2 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
300 W |
51 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
445 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
453 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.69 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
666 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
950 V |
-55 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
FAST SWITCHING |
TO-247 |
102 ns |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
6.5 V |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-220AB |
55 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
394 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
443 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1350 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
||||||||||||||||||||||
|
Onsemi |
Matte Tin (Sn) - annealed |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
250 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
536 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
68 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
100 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
300 W |
70 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
288 W |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.82 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
149 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.05 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
1 |
COLLECTOR |
TO-247 |
e3 |
30 |
260 |
74 ns |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
300 W |
51 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
445 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-262AA |
2800 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
236 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
462 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
25 V |
6.8 V |
UPPER |
R-XUFM-X32 |
LOW CONDUCTION LOSS |
124 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
64 ns |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
30 ns |
305 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1000 V |
100 ns |
-55 Cel |
20 V |
397 ns |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
76 ns |
||||||||||||||||
|
Onsemi |
MATTE TIN |
e3 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
239 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
98 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
223 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
60 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
417 W |
100 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
384 W |
80 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
20 V |
6.5 V |
MATTE TIN |
e3 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.