Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
64 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.025 ohm |
8.2 A |
DUAL |
R-PDSO-F6 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
110 A |
19.6 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.015 ohm |
10.2 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
21 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.45 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
2.9 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.12 ohm |
2.9 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.45 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
3.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.12 ohm |
2.9 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.08 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
3.4 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
260 |
29 pF |
MIL-STD-202 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.45 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
3.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.12 ohm |
2.9 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.15 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18.3 A |
3.9 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.085 ohm |
2.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
37.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
20 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.016 ohm |
47.6 A |
DUAL |
R-PDSO-F8 |
DRAIN |
58 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
37.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
20 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.016 ohm |
47.6 A |
DUAL |
R-PDSO-F8 |
DRAIN |
58 pF |
MIL-STD-202 |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
14 A |
16 mJ |
3.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
.19 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
32.5 mJ |
4.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.08 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18 A |
26 mJ |
4.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.065 ohm |
4.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
14 A |
16 mJ |
3.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
.17 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4.4 A |
.49 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
1.7 ohm |
1.1 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.125 ohm |
30 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
50 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
46.8 mJ |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.045 ohm |
6 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
16 A |
4 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.045 ohm |
4 A |
DUAL |
R-PDSO-N6 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.205 ohm |
30 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
16 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.045 ohm |
4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
76 pF |
AEC-Q101 |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
16 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.045 ohm |
4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
76 pF |
AEC-Q101 |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.48 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18.8 A |
10.6 mJ |
4.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.105 ohm |
4.7 A |
DUAL |
R-PDSO-F8 |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
16 A |
4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.045 ohm |
4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.085 ohm |
50 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
46.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.046 ohm |
6 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
34 A |
93.9 mJ |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.03 ohm |
8.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
46.8 mJ |
4.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.065 ohm |
6 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
32.5 mJ |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
.07 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.14 ohm |
50 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
32.5 mJ |
5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.08 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
46.8 mJ |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.032 ohm |
6 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.205 ohm |
30 A |
UPPER |
R-PUFM-X8 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
32.5 mJ |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
.08 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
36 A |
52 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.021 ohm |
9 A |
DUAL |
R-PDSO-G8 |
55 pF |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
90 mJ |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.056 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
16 A |
4 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.045 ohm |
4 A |
DUAL |
R-PDSO-N6 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.084 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32 A |
6.4 mJ |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0364 ohm |
8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
5 A |
DUAL |
R-PDSO-G8 |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
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Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.029 ohm |
8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
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|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.084 ohm |
5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
20 |
260 |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
35 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.027 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
88 A |
11 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.025 ohm |
11 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32 A |
4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.16 ohm |
4 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||
Renesas Electronics |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1.38 ohm |
1 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
.625 mJ |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.24 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
36 A |
4.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.18 ohm |
4.5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
20 |
260 |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32 A |
6.4 mJ |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.041 ohm |
8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.