SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF7316

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

TIN LEAD

.058 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

MS-012AA

e0

IRF7306TR

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.1 ohm

3 A

DUAL

R-PDSO-G8

2

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BSO207PHXUMA1

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

22.8 A

44 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

5 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

IRF7503TRPBF-EL

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.135 ohm

2.4 A

DUAL

S-PDSO-G8

ULTRA LOW RESISTANCE

IRF7324PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.018 ohm

9 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

MS-012AA

e3

30

260

AUIRF7379QTR

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

46 A

4.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

4.8 A

DUAL

R-PDSO-G8

1

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MS-012AA

e3

40

260

IRF7328PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.021 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MS-012AA

e3

30

260

IRF9910PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

98 A

26 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0093 ohm

12 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

BSC072N04LD

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

87 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0072 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

IRF7303PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e3

30

260

IRF7309I

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.05 ohm

4 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

e0

IRF9956TR

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

44 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.1 ohm

3.5 A

DUAL

R-PDSO-G8

2

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

e3

IRF7311PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

26 A

100 mJ

4.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.029 ohm

6.6 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

e3

30

260

934066978115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

64 A

11.9 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.055 ohm

16 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067947115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

228 A

103 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0093 ohm

40 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067949115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

213 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067809115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

265 A

125 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0072 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934066975115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

118 A

83 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.029 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067946115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

39 A

10.9 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.121 ohm

9.8 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067944115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

84 A

46 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0376 ohm

21.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067812115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

211 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0094 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067945115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

51 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0825 ohm

13 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067954115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

11.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

15.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067813115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

127 A

26.3 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.019 ohm

24.2 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067943115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

34 A

12.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.159 ohm

8.5 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067939115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

126 A

83 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0245 ohm

29.5 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934068327115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

305 A

169 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0058 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067948115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

204 A

118 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0115 ohm

35 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067953115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

148 A

64 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.017 ohm

26 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067951115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

190 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934068326115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

329 A

214 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0053 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067808115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

308 A

157 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0058 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067833115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

95 A

20.3 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 ohm

20.7 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067942115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

116 A

67 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0275 ohm

29 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934067814115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

94 A

15 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.029 ohm

18.2 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067952115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

164 A

55 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.014 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

934067811115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

225 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0085 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

934066974115

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

83 A

48 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

21 A

DUAL

R-PDSO-G6

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

BUK9K35-60RA

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

90 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.035 ohm

22 A

DUAL

R-PDSO-X6

1

DRAIN

HIGH RELIABILITY

e3

30

260

70 pF

AEC-Q101; IEC-60134

BUK7K45-100EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

84 A

46 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0376 ohm

21.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K5R6-30EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

305 A

169 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0058 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K8R7-40EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

225 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0085 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K35-60RAX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

90 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.035 ohm

22 A

DUAL

R-PDSO-X6

1

DRAIN

HIGH RELIABILITY

e3

30

260

70 pF

AEC-Q101; IEC-60134

BUK9K5R1-30EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

329 A

214 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0053 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K15-80E

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

80 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

92 A

133 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.015 ohm

23 A

DUAL

R-PDSO-X6

1

DRAIN

AVALANCHE RATED

e3

30

260

158 pF

AEC-Q101; IEC-60134

BUK9K12-60EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

204 A

118 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0115 ohm

35 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K18-40EX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

127 A

26.3 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.019 ohm

24.2 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PSMN013-60HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

213 A

82 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.01 ohm

40 A

DUAL

R-PDSO-X8

1

DRAIN

HIGH RELIABILITY

e3

30

260

196 pF

IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.