Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
140 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
TIN LEAD |
.058 ohm |
4.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
AVALANCHE RATED |
MS-012AA |
e0 |
||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.1 ohm |
3 A |
DUAL |
R-PDSO-G8 |
2 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
22.8 A |
44 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.045 ohm |
5 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
e3 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
2 |
14 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.135 ohm |
2.4 A |
DUAL |
S-PDSO-G8 |
ULTRA LOW RESISTANCE |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
71 A |
9 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.018 ohm |
9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
46 A |
4.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.045 ohm |
4.8 A |
DUAL |
R-PDSO-G8 |
1 |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
MS-012AA |
e3 |
40 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32 A |
8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.021 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
98 A |
26 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0093 ohm |
12 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
87 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0072 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.05 ohm |
4.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
16 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.05 ohm |
4 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
e0 |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
16 A |
44 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.1 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
2 |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
MS-012AA |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
26 A |
100 mJ |
4.2 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.029 ohm |
6.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
11.9 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.055 ohm |
16 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
228 A |
103 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0093 ohm |
40 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
213 A |
82 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.01 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
265 A |
125 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0072 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
118 A |
83 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.029 ohm |
30 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
39 A |
10.9 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.121 ohm |
9.8 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
84 A |
46 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0376 ohm |
21.4 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
211 A |
84 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0094 ohm |
30 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
51 A |
19.5 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0825 ohm |
13 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
71 A |
11.6 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.045 ohm |
15.4 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
127 A |
26.3 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.019 ohm |
24.2 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
34 A |
12.6 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.159 ohm |
8.5 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
126 A |
83 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0245 ohm |
29.5 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
305 A |
169 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0058 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
204 A |
118 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0115 ohm |
35 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
148 A |
64 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.017 ohm |
26 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
190 A |
82 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0125 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
329 A |
214 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0053 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
308 A |
157 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0058 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
95 A |
20.3 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.03 ohm |
20.7 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
116 A |
67 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0275 ohm |
29 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
94 A |
15 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.029 ohm |
18.2 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
164 A |
55 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.014 ohm |
30 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
225 A |
84 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0085 ohm |
30 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
83 A |
48 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.045 ohm |
21 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
19.5 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.035 ohm |
22 A |
DUAL |
R-PDSO-X6 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
70 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
84 A |
46 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0376 ohm |
21.4 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
305 A |
169 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0058 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
225 A |
84 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0085 ohm |
30 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
19.5 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.035 ohm |
22 A |
DUAL |
R-PDSO-X6 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
70 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
329 A |
214 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0053 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
92 A |
133 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.015 ohm |
23 A |
DUAL |
R-PDSO-X6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
158 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
204 A |
118 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0115 ohm |
35 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
127 A |
26.3 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.019 ohm |
24.2 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
64 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
213 A |
82 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.01 ohm |
40 A |
DUAL |
R-PDSO-X8 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
196 pF |
IEC-60134 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.