SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF7103PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.13 ohm

3 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

IRF9952TR

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

44 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.1 ohm

3.5 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MS-012AA

e3

IRF9953

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

57 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.25 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e0

AUIRF7343Q

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

38 A

72 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.05 ohm

4.7 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MS-012AA

e3

IRF7506TR

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

9.6 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.27 ohm

1.7 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

IRF7328

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.021 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MS-012AA

e0

IPG20N10S4-36A

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

60 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.036 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IRF8910PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

82 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0134 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

IRF9953TR

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

57 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.25 ohm

2.3 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

e3

AUIRF9952Q

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

44 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

2.8 A

DUAL

R-PDSO-G8

1

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

IPG20N04S4L-11A

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

80 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0116 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IRFHM792TR2PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10.4 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

14 A

10.2 mJ

3.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.195 ohm

2.3 A

DUAL

S-PDSO-N8

1

DRAIN

e3

IRF7317

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

26 A

100 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

TIN LEAD

.029 ohm

6.6 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

MS-012AA

e0

IPG20N04S4L-08

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

54 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

145 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0082 ohm

20 A

DUAL

R-PDSO-F8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IPG20N10S4L-35

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

43 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

60 mJ

20 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.035 ohm

20 A

DUAL

R-PDSO-F8

1

e3

60 pF

AEC-Q101

IRF7379TRPBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

46 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

5.8 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

IRF9910

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

98 A

26 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0093 ohm

12 A

DUAL

R-PDSO-G8

1

MS-012AA

IRF7313

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

82 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

MATTE TIN

.029 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

MS-012AA

e3

30

260

IRF9952PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

44 mJ

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

3.5 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

IPG20N04S4-09

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

145 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0086 ohm

20 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

IRF7104PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e3

30

260

BSC072N03LDGATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0094 ohm

11.5 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

IRF7530PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

33 mJ

5.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

5.4 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

IPG20N06S2L-65

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

43 W

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.065 ohm

20 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

260

AEC-Q101

IRF7343PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

38 A

72 mJ

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

4.7 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

e3

30

260

BSO207PHXT

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

22.8 A

44 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

5 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

BSO211PNTMA1

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

18.8 A

28 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.067 ohm

4.7 A

DUAL

R-PDSO-G8

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

IRF7104TR

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.25 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

AUIRF7303QTR

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

4.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.05 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

MS-012AA

e3

40

260

IRF8915

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

15 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0183 ohm

8.9 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e0

AUIRF7341Q

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

42 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

5.1 A

DUAL

R-PDSO-G8

1

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MS-012AA

IRF7506PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.39 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

9.6 A

.97 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.27 ohm

1.7 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

IRF7316PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

140 mJ

4.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.058 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

e3

30

260

IRF9956PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

44 mJ

3.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

MS-012AA

IPG20N06S4-15

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0155 ohm

20 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

260

IRF7501TR

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.135 ohm

2.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

IRF7905PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

18 mJ

8.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0171 ohm

8.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

IRF8910PBF-1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

82 A

19 mJ

10 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.3 W

150 Cel

SILICON

-55 Cel

.0134 ohm

10 A

DUAL

R-PDSO-G8

1

MS-012AA

160 pF

IRF9389PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

34 A

6.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.027 ohm

6.8 A

DUAL

R-PDSO-G8

1

MS-012AA

IRF7104

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

TIN LEAD

.25 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

IRF8313PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

81 A

46 mJ

9.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0155 ohm

9.7 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

IPG20N06S4L-14A

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0137 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IPG20N06S4L-11A

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

165 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0112 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IRF7301

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

4.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e3

30

260

IRF7303TRHR

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

4.9 A

DUAL

R-PDSO-G8

ULTRA LOW RESISTANCE

IPG20N04S4-08

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

230 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0076 ohm

20 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

260

IPG20N06S4L14ATMA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0137 ohm

20 A

DUAL

R-PDSO-F8

1

LOGIC LEVEL COMPATIBLE

e3

IRF7304

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

3.6 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.