SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDS6982	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	6.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
FDS8960C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	24.5 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.024 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified	FAST SWITCHING		e3	30	260
FDS8926A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	43 ns	-55 Cel	91 ns		.03 ohm	5.5 A	DUAL	R-PDSO-G8									110 pF
NVMFD5875NLT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	22 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	11.3 ns	-55 Cel	15.7 ns	MATTE TIN	.045 ohm	7 A	DUAL	R-PDSO-F8	1					e3	30	260		AEC-Q101
NVMFD5853NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	24 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	165 A	40 mJ	34 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	12 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NTMFC013NP10M5L	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	102 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	208 A	161 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0134 ohm	60 A	DUAL	R-PDSO-N8		DRAIN							17.5 pF
NVMFD6H846NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	34 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	114 A	201 mJ	31 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.019 ohm	9.4 A	DUAL	R-PDSO-F8	1					e3	30	260		AEC-Q101
NVMFD5852NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	27 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ	44 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.012 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NTMFD6H852NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	86 mJ	25 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0315 ohm	7 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4 pF
NVMFWD024N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	85 A	14 mJ	24 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0226 ohm	24 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	5.05 pF	AEC-Q101
NVMFD024N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	85 A	14 mJ	24 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0226 ohm	24 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	5.05 pF	AEC-Q101
NVMFD5C466NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	169 A	72 mJ	49 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0081 ohm	14 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
NTMFD5C680NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	57 A	47 mJ	26 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.041 ohm	7.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	6 pF
NVMFD5877NLWFT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5877NLT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NVMFD5C470NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	110 A	49 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0178 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NTMFD6H840NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	336 A	297 mJ	74 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0088 ohm	14 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	11 pF
NVMFD5852NLT1	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.012 ohm	15 A	DUAL	R-PDSO-F6		DRAIN								AEC-Q101
FDS6894AZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.9 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.017 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3		260
FDS9953A	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.13 ohm	2.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ECH8659-TL-W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	40 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.024 ohm	7 A	DUAL	R-XDSO-F8	1			ESD PROTECTED		e6	30	260
NVMFWD020N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	16 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0203 ohm	27 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	4.9 pF	AEC-Q101
NVMFD5C478NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	90 A	48 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	9.8 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
NTMFD024N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	85 A	14 mJ	24 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0226 ohm	24 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	5.05 pF
FDS6894A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.017 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ECH8673	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	30 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.085 ohm	3.5 A	DUAL	R-PDSO-F8
NVMFD5C668NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57.5 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	454 A	205 mJ	15.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0092 ohm	15.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	14 pF	AEC-Q101
NVMFWD030N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	63 A	10 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0297 ohm	19 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	4.4 pF	AEC-Q101
NTMFD5877NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.06 ohm	6 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	36 pF
NTMFD020N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	16 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0203 ohm	27 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4.9 pF
NVMFD020N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	16 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0203 ohm	27 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4.9 pF	AEC-Q101
FDMC9430L-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	11.4 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2		21.6 mJ	12 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13 ns	-55 Cel	28 ns		.008 ohm	12 A	DUAL	S-PDSO-N4	1	DRAIN					30	260		AEC-Q101
NVMFD5873NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	190 A	40 mJ	58 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.013 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5C478NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	90 A	48 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	9.8 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
FDS89141	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	37 mJ	3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
NTMFD5875NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	7 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.045 ohm	7 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	36 pF
FDMA1028NZTR	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	6 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	32 ns		.068 ohm	3.7 A	DUAL	S-PDSO-N6		DRAIN			MO-229VCCC				60 pF
SI9936DY	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3		260
NTMFD016N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	128 A	21 mJ	32 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0163 ohm	32 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	5.7 pF
ECH8659	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	40 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.024 ohm	7 A	DUAL	R-PDSO-F8									72 pF
NVMFD5875NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	22 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	11.3 ns	-55 Cel	15.7 ns	MATTE TIN	.045 ohm	7 A	DUAL	R-PDSO-F8	1					e3	30	260		AEC-Q101
NDS9956A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A		3.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3		260
NTMFD5C650NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	502 A	186 mJ	111 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0058 ohm	21 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	17 pF
ECH8673TL	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	30 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.085 ohm	3.5 A	DUAL	R-PDSO-F8
FDS6812A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A		6.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.22 ohm	6.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
NVMFD5C470NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	108 A	49 mJ	36 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0117 ohm	11.7 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
ECH8616	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	20 A		3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.093 ohm	3 A	DUAL	R-PDSO-F8			Not Qualified
NVMFD5852NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	27 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ	44 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.012 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.