SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQJQ904E-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	300 A	125 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0034 ohm	64 A	SINGLE	R-PSSO-G4		DRAIN							AEC-Q101
STL36DN6F7	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	144 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.027 ohm	36 A	DUAL	R-PDSO-F6	1	DRAIN			e3		260
TT8J13TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	5 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.062 ohm	2.5 A	DUAL	R-PDSO-F8	1					10	260
TPIC5201KC	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	SINGLE	R-PSFM-T7			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TPIC5201KV	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	.75 A	ZIG-ZAG	R-PZFM-T7			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
CSD85301Q2	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	26 A	3.8 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.039 ohm	5 A	DUAL	S-PDSO-N6	1	DRAIN		AVALANCHE RATED	e3	30	260	62 pF
FQS4901	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1.8 A		.45 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	70 ns	-55 Cel	130 ns		4.2 ohm	.45 A	DUAL	R-PDSO-G8								6.5 pF
FDJ1028N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.09 ohm	3.2 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified		e4		260
NTMD4102PR2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.019 ohm	6.5 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
FQS4903TF	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1.48 A		.37 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6.2 ohm	.37 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
NTMD6N02R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.73 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	360 mJ	3.92 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.035 ohm	3.92 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e3	30	260
MMDF2C02HDR2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	19 A	405 mJ	3.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.09 ohm	3.8 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	e0		235
MMDF1N05ER2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	300 mJ	2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.3 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e3	40	260
NTHD2102PT1	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	UNSPECIFIED	SWITCHING	8 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	4.6 A		3.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.058 ohm	3.4 A	DUAL	R-XDSO-C8			Not Qualified		e0		235
MMDF1N05ER2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	300 mJ	2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.3 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e0	30	235
MMDF4P03HDR2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	450 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.085 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE		NOT SPECIFIED	NOT SPECIFIED
FW216A-TL-2W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.064 ohm	4.5 A	DUAL	R-PDSO-G8	1				e3
NTMD7C02R2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.024 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified		e0
NTMD6N04R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	29 A	245 mJ	5.8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.034 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
MMDF2C03HDR2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A	324 mJ	4.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.07 ohm	4.1 A	DUAL	R-PDSO-G8	1		Not Qualified		e0		235
MMDF2C02ER2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	245 mJ	3.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	3.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e0		235
NTHC5513T1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified		e0		235
FW905	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	DEPLETION MODE	2	52 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.024 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
MMDF2N02ER2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	245 mJ	3.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.1 ohm	3.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e3	40	260
MMDF2P02ER2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13 A	245 mJ	2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.25 ohm	2.5 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	e3	40	260
FDJ1027P	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	39 ns	-55 Cel	55 ns		.16 ohm	2.8 A	DUAL	R-PDSO-F6		DRAIN						29 pF
NTMD4102PR2	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.019 ohm	6.5 A	DUAL	R-PDSO-G8			Not Qualified		e0
FQS4900TF	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	5.2 A		1.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.65 ohm	1.3 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
NTMD6N03R2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.032 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified		e0
NTLUD4C26NTAG	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	22 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.021 ohm	4.8 A	DUAL	S-PDSO-N6	1	DRAIN			e3	30	260	27 pF
NTHD3100CT3G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified		e3		260
FW813	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	52 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.049 ohm	5 A	DUAL	R-PDSO-G8
MMDF1300R2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9 A	113 mJ	2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.1 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified		e0
NTMD6N02R2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.73 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	360 mJ	3.92 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.035 ohm	3.92 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e0	30	235
FW812	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	52 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.017 ohm	10 A	DUAL	R-PDSO-G8
NTMD2P01R2	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.71 W	PLASTIC/EPOXY	SWITCHING	16 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9 A	350 mJ	2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.1 ohm	2.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e0	NOT SPECIFIED	235
FW349	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	DEPLETION MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.037 ohm	5 A	DUAL	R-PDSO-G8
NVMD6N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	1			ULTRA LOW ON RESISTANCE	e3	30	260		AEC-Q101
NTLJD4116NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	2	20 A		3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.09 ohm	2.5 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3	30	260
NTMD3N08LG	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A	25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.215 ohm	2.3 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
MMDF2C03HDR2G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A	324 mJ	4.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.07 ohm	4.1 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	40	260
MMDF2C01HDR2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.045 ohm	5.2 A	DUAL	R-PDSO-G8			Not Qualified		e0		235
NTLJD3115PTAG	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3	40	260
NTMD2C02R2SG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.043 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	e3		260
MMDF3N02HDR2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	19 A	405 mJ	3.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.09 ohm	3.8 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	e0	30	235
FW297-TL-2W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.058 ohm	4.5 A	DUAL	R-PDSO-G8	1			ESD PROTECTED	e3	30	260
NTMD4N03R2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	80 mJ	4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.06 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified		e0		235
FW813TL	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	52 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.049 ohm	5 A	DUAL	R-PDSO-G8

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.