SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SSM6P49NU,LF(T	Toshiba	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	16 A		4 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.045 ohm	4 A	DUAL	S-PDSO-N6		DRAIN
TT8J11TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	3.5 A	DUAL	R-PDSO-F8	1						10	260
TT8J2TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	10 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN COPPER	.084 ohm	2.5 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
UT6JA3TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	12 A	4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.059 ohm	5 A	DUAL	R-PDSO-N6		DRAIN				e3
UT6MA2TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	12 A	6.4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.08 ohm	4 A	DUAL	S-PDSO-N6		DRAIN				e3
FDS8333C_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.08 ohm	4.1 A	DUAL	R-PDSO-G8			Not Qualified			e3
HP8M31TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	5.4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.073 ohm		DUAL	R-PDSO-F6		DRAIN				e3
QH8K26TR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.038 ohm		DUAL	R-PDSO-F8	1					e3	10	260
QH8KA4TCR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	40 A	6.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.017 ohm	9 A	DUAL	R-PDSO-F8	1					e3	10	260
QH8MA4TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	3.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.016 ohm		DUAL	R-PDSO-F8	1					e3	10	260
QS8K13TCR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.039 ohm	6 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
QS8K21TR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	45 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.075 ohm	4 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
SH8J31GZETB	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	14 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.085 ohm	4.5 A	DUAL	R-PDSO-G8	1					e3	10	260
SH8K25GZ0TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A	.48 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.085 ohm	5.2 A	DUAL	R-PDSO-G8									15 pF
SH8K26GZ0TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.08 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.05 ohm	6 A	DUAL	R-PDSO-G8									30 pF
SH8K41GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.16 ohm	3.4 A	DUAL	R-PDSO-G8						e3
SH8K52GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	6.5 mJ	3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.19 ohm	3 A	DUAL	R-PDSO-G8						e3
SH8KA1GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm		DUAL	R-PDSO-G8						e3
SH8KA4TB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	4.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					21.4 ohm	9 A	DUAL	R-PDSO-G8	1						10	260
SH8M24TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.064 ohm	6 A	DUAL	R-PDSO-G8									70 pF
SH8M41GZETB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A		3.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.16 ohm	3.4 A	DUAL	R-PDSO-G8						e3
SH8M41TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.16 ohm	3.4 A	DUAL	R-PDSO-G8	1						10	260	40 pF
SP8J5FRATB	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.028 ohm	7 A	DUAL	R-PDSO-G8	1						10	260		AEC-Q101
SP8K1FRATB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN COPPER	.082 ohm	5 A	DUAL	R-PDSO-G8	1					e2	10	260	50 pF	AEC-Q101
SP8K24HZGTB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.037 ohm	6 A	DUAL	R-PDSO-G8						e3			175 pF	AEC-Q101
SP8K2TB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.047 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified			e2
SP8K3FRATB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.035 ohm	7 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED	120 pF	AEC-Q101
SP8K5	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.15 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e2	10	260
SP8K52FRATB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.19 ohm	3 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SP8K80TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2 A	.017 mJ	.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					11.7 ohm	.5 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED
SP8M24HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.064 ohm	4.5 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED	70 pF	AEC-Q101
UT6J3TCR1	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	12 A	.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.085 ohm	3 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
UT6JA2TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	12 A	6.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.103 ohm	4 A	DUAL	S-PDSO-N6	1	DRAIN				e3	10	260
UT6K3TCR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	12 A	2.4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.042 ohm	5.5 A	DUAL	S-PDSO-N6	1	DRAIN					10	260
DMN3015LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A	25 mJ	8.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.015 ohm	8.4 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMTH10H017LPD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	93 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	236 A	50 mJ	59 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.6 W	175 Cel	SILICON		-55 Cel		TIN	17.4 ohm	59 A	DUAL	R-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3	30	260	20 pF	AEC-Q101
HAT2029R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	60 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
IPG16N10S4L61AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	29 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	64 A	33 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.061 ohm	16 A	DUAL	R-PDSO-F8	1	DRAIN				e3			36 pF
IPG20N04S412AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0122 ohm	20 A	DUAL	R-PDSO-F8	1	DRAIN				e3			21 pF	AEC-Q101
IPG20N04S4L-11	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0116 ohm	20 A	DUAL	R-PDSO-F8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
IPG20N06S4L11AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	165 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0112 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
SI4214DDY-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	59 ns	-55 Cel	108 ns	Matte Tin (Sn)	.0195 ohm	8.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	86 pF
SI4228DY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	50 A	11.25 mJ	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	50 ns	Matte Tin (Sn)	.02 ohm	8 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	76 pF
SI5908DC-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.4 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.04 ohm	4.4 A	DUAL	R-XDSO-C8	1	DRAIN	Not Qualified			e3
SI7220DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.6 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	2	20 A	6.1 mJ	3.4 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.06 ohm	3.4 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SI7540ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	35 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.015 ohm	8 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SQ3985EV-T1_BE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A	3.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	42 ns	-55 Cel	82 ns	Tin (Sn)	.145 ohm	3.9 A	DUAL	R-PDSO-G6					MO-193AA	e3	40	250	57 pF	AEC-Q101
SQJ500AEP-T1_GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	120 A	35 mJ	30 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	30 ns	-55 Cel	49 ns		.0092 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	111 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.