SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQS944ENW-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	2	24 A	13.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	12.7 ns	-55 Cel	28.5 ns		.034 ohm	6 A	DUAL	S-PDSO-F8		DRAIN							24 pF	AEC-Q101
SH8KC6TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	3.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.046 ohm	6.5 A	DUAL	R-PDSO-G8	1						10	260	17 pF
SI9945AEY-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A		3.7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.08 ohm	3.7 A	DUAL	R-PDSO-G8	1					e3	20	260
IRF9362TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	64 A	94 mJ	8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.021 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
SQJ912BEP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	100 A	33.8 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	30 ns	-55 Cel	60 ns		.011 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN							110 pF	AEC-Q101
STS5DNF60L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.055 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3	30	260
NTMFD5C446NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	644 A	171 mJ	145 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0039 ohm	25 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	48 pF
NVMFD5C462NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	311 A	174 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0077 ohm		DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
IRF7343TR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A	72 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.05 ohm	4.7 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY	MS-012AA	e3
FDMS8090	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	59 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	120 A	253 mJ	40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.013 ohm	10 A	DUAL	R-PDSO-N4	1	DRAIN				e4	30	260
NTMD4N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	80 mJ	4 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.06 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMP3056LSDQ-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	6.9 A	DUAL	R-PDSO-G8				HIGH RELIABILITY		e3		260	92 pF	AEC-Q101
IRF8910TRPBF-1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	82 A	19 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.3 W	150 Cel	SILICON		-55 Cel			.0134 ohm	10 A	DUAL	R-PDSO-G8	1				MS-012AA				160 pF
NVMFD5C680NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	57 A	47 mJ	26 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.041 ohm	7.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
BUK7K25-40E	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	107 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.025 ohm	27 A	DUAL	R-PDSO-G6	1	DRAIN		AVALANCHE RATED		e3				AEC-Q101; IEC-60134
DMC2700UDM-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.12 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	5 A		1.34 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.4 ohm	1.34 A	DUAL	R-PDSO-G6	1					e3	30	260	5.37 pF	MIL-STD-202
SI7922DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.6 W	UNSPECIFIED	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	2	10 A	1.25 mJ	1.8 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.195 ohm	1.8 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
IPG20N06S2L65AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.065 ohm	20 A	DUAL	R-PDSO-F8	1					e3			50 pF	AEC-Q101
IRF7341PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A	72 mJ	4.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.05 ohm	4.7 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
QH8MA2TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0056 ohm	4.5 A	DUAL	R-PDSO-F8						e3
SI7998DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	60 A		30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0093 ohm	15 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3
STL50DN6F7	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	228 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.011 ohm	57 A	DUAL	R-PDSO-F6	1	DRAIN				e3		260
CSD87502Q2	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	23 A	3.1 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.06 ohm	5 A	DUAL	S-PDSO-N6	1	DRAIN		AVALANCHE RATED		e3	30	260	29 pF
IRF7316TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.058 ohm	4.9 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED	MS-012AA
FDMC8032L	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	12 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	50 A	13 mJ	20 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	.02 ohm	7 A	DUAL	S-PDSO-N4	1	DRAIN			MO-229	e4	NOT SPECIFIED	NOT SPECIFIED
IPG20N10S4L35AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.035 ohm	20 A	DUAL	R-PDSO-F8	1	DRAIN				e3				AEC-Q101
NVMFD5C672NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	146 A	66 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0168 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
IPG20N06S2L65ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.065 ohm	20 A	DUAL	R-PDSO-F8	1					e3				AEC-Q101
FDS3992_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		167 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
SQJ960EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	12 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.04 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260
IPG20N06S2L35ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.035 ohm	20 A	DUAL	R-PDSO-F8	1					e3				AEC-Q101
NTMD5838NLR2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A	20 mJ	8.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0308 ohm	7.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IPG20N06S415AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0155 ohm	20 A	DUAL	R-PDSO-F8	1					e3
NVMFD5C470NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	110 A	49 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0178 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5C674NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	119 A	61 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0204 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
AUIRF7313QTR	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	58 A	450 mJ	6.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.029 ohm	6.9 A	DUAL	R-PDSO-G8	1				MS-012AA					AEC-Q101
IPG20N04S4L07ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	230 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0072 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
SI7228DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	2	35 A	9.8 mJ	26 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.02 ohm	8.8 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified				30	260
STS4DNF60	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.09 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	LOW THRESHOLD			NOT SPECIFIED	NOT SPECIFIED
ZXMP6A18DN8TA	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	23 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.055 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS6898A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.014 ohm	9.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7303TRPBF-EL	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.05 ohm	4.9 A	DUAL	R-PDSO-G8				ULTRA LOW RESISTANCE	MS-012AA
IRF7341Q	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ	5.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.05 ohm	5.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e0
IRF7501TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	SQUARE	ENHANCEMENT MODE	2	19 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.135 ohm	2.4 A	DUAL	S-PDSO-G8	1			ULTRA LOW RESISTANCE		e3	30	260
DMC3021LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A		8.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.021 ohm	8.5 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
NVMFD5877NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
DMN3018SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	60 A		6.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.022 ohm	6.7 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
NTHC5513T1G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.