SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BUK7K6R8-40E	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	276 A	130 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0068 ohm	40 A	DUAL	R-PDSO-G6	1	DRAIN		AVALANCHE RATED		e3				AEC-Q101; IEC-60134
FDS6975_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.032 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
IPG20N04S412ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0122 ohm	20 A	DUAL	R-PDSO-F8	1					e3
IRF7307QTRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.05 ohm	5.2 A	DUAL	R-PDSO-G8				AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF7311TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.029 ohm	6.6 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA	e3	30	260
IRF7319TR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G8	2		Not Qualified	AVALANCHE RATED	MS-012AA	e3
NVMFD5C446NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	637 A	223 mJ	127 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0029 ohm	24 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
QS8J4TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.056 ohm	4 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
SH8J62TB1	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.056 ohm	4.5 A	DUAL	R-PDSO-G8						e3
SI7949DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	25 A	24.2 mJ	3.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SI7960DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	40 A	27 mJ	6.2 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.021 ohm	6.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
UPA3753GR-E1-AX	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.12 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	2.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.072 ohm	5 A	DUAL	R-PDSO-G8						e4			32 pF
UPA3753GR-E2-AX	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.12 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	2.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.072 ohm	5 A	DUAL	R-PDSO-G8						e4			32 pF
FDS6898A_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.014 ohm	9.4 A	DUAL	R-PDSO-G8			Not Qualified			e3
IRF7350PBF	International Rectifier	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8.4 A	35 mJ	1.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.21 ohm	2.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
NVMFD5C478NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	48 mJ	29 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.025 ohm	10.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	9 pF	AEC-Q101
NDS9952A	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A		3.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.08 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF9956TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	44 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON			.1 ohm	3.5 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY	MS-012AA
SP8M3HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.082 ohm	5 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED	50 pF	AEC-Q101
STS7C4F30L	STMicroelectronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.026 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
DMNH6021SPDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	64 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.025 ohm	8.2 A	DUAL	R-PDSO-F6		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
NTMFD5C466NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	177 A	72 mJ	52 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0126 ohm	14 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	13 pF
QS6J11TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.105 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified			e1	10	260
SP8M41HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A		3.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN COPPER	.16 ohm	3.4 A	DUAL	R-PDSO-G8	1					e2	10	260	40 pF	AEC-Q101
DMN3032LFDB-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6	1	DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
IPG20N10S436AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.036 ohm	20 A	DUAL	R-PDSO-F8	1	DRAIN				e3				AEC-Q101
DMG6898LSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.28 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	9.5 A	DUAL	R-PDSO-G8	1					e3		260	142 pF	AEC-Q101; IATF 16949
DMN6070SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	5.9 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.08 ohm	3.3 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMTH6010LPD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	37.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	170 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	47.6 A	DUAL	R-PDSO-N8		DRAIN				e3			58 pF
HP8M51TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	2.9 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.18 ohm		DUAL	R-PDSO-F6		DRAIN				e3
QH8K22TCR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	1.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.046 ohm		DUAL	R-PDSO-F8						e3
TT8J21TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.068 ohm	2.5 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
UT6MA3TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	12 A	2 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.042 ohm	5.5 A	DUAL	S-PDSO-N6	1	DRAIN				e3	10	260
DMC10H172SSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.16 ohm	2 A	DUAL	R-PDSO-G8						e3			20 pF	MIL-STD-202
DMC2020USD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.14 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	33.6 A		8.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.02 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG6898LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.28 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	9.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	142 pF
DMN3032LFDBQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMP2160UFDB-7	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	13 A		3.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.07 ohm	3.8 A	DUAL	S-PDSO-N6	1		Not Qualified	HIGH RELIABILITY		e4	30	260
DMTH10H017LPDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	93 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	236 A	150 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0174 ohm	13 A	DUAL	R-PDSO-F8	1	DRAIN				e3		260	20 pF	AEC-Q101; MIL-STD-202
QS8J13TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN COPPER	.022 ohm	5.5 A	DUAL	R-PDSO-F8	1					e2	10	260
QS8J1TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.029 ohm	4.5 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
DMG9933USD-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.15 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.075 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMT47M2LDVQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	14.8 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	24.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0108 ohm	30.2 A	DUAL	S-PDSO-F8	1	DRAIN		HIGH RELIABILITY		e3		260	14.8 pF	AEC-Q101; MIL-STD-202
QH8MA3TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A	1.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.029 ohm		DUAL	R-PDSO-F8	1					e3	10	260
SH8K32GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.077 ohm	4.5 A	DUAL	R-PDSO-G8						e3
SH8KE6TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	1.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.084 ohm	4.5 A	DUAL	R-PDSO-G8									6 pF
SH8MA2GZETB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.08 ohm		DUAL	R-PDSO-G8						e3
SH8MA4TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	5.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON			.0325 ohm		DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.