SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 1,264

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STS10DN3LH5

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

50 mJ

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.028 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

STL20DNF06LAG

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

210 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

20 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STS1C1S250

STMicroelectronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3 A

.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

1.4 ohm

.75 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

934056386118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

PHN210-TAPE-7

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

4 W

150 Cel

SILICON

40 ns

140 ns

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

PHN210T/R

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

3.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

4 W

150 Cel

SILICON

40 ns

140 ns

NICKEL PALLADIUM GOLD

.1 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

934066987115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

21 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.089 ohm

12.5 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

PHKD3NQ10T/T3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

934055906518

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

3 A

DUAL

R-PDSO-G8

934033430118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

934067072115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

124 A

22 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0095 ohm

30 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934056385118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

934066977115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

90 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

22 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

PHP222

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.7 A

3.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.22 ohm

1.93 A

DUAL

R-PDSO-G8

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

MS-012AA

e4

PHN210

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

3.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

4 W

150 Cel

SILICON

40 ns

140 ns

NICKEL PALLADIUM GOLD

.1 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

PHKD3NQ10T

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.09 ohm

3 A

DUAL

R-PDSO-G8

2

Not Qualified

e4

30

260

934055451118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.1 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

PHN210T

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

3.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.1 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

30

260

PHN210T/T3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

934066992115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

314 A

228 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0056 ohm

40 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

PMDPB58UPE

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

14.4 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.067 ohm

3.6 A

DUAL

S-PDSO-N6

1

DRAIN

e3

IEC-60134

PHN210T,118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

13 mJ

3.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.1 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

e4

30

260

934066845115

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

14.4 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.067 ohm

3.6 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

934066989115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

276 A

130 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0068 ohm

40 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934066976115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

295 A

166 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0062 ohm

40 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934055906118

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

934066988115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

340 A

228 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0051 ohm

40 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

PHN210-TAPE-13

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

4 W

150 Cel

SILICON

40 ns

140 ns

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

934066991115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

107 A

10 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 ohm

27 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

SI9956DY

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

BUK7K35-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

95 A

20.3 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 ohm

20.7 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

AEC-Q101; IEC-60134

BUK9K134-100E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

34 A

12.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.159 ohm

8.5 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K89-100E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

51 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0825 ohm

13 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K6R2-40E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

295 A

166 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0062 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

AVALANCHE RATED

e3

AEC-Q101; IEC-60134

BUK7K52-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

11.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

15.4 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

SI9925DY

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

48 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

90 ns

.045 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

IEC-60134

BUK7K134-100E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

39 A

10.9 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.121 ohm

9.8 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K8R7-40E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

211 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0094 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK7K6R2-40E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

308 A

157 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0058 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K25-40E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

94 A

15 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.029 ohm

18.2 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

SI9936DY/T3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.05 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

e4

BUK7K13-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

213 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K89-100E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

21 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.089 ohm

12.5 A

DUAL

R-PDSO-G6

1

DRAIN

AVALANCHE RATED

e3

AEC-Q101; IEC-60134

BUK9K13-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

190 A

82 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

40 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

SI9956DY/T3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

BUK7K17-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

164 A

55 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.014 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

BUK7K8R7-40E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

225 A

84 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0085 ohm

30 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

BUK9K17-60E

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

148 A

64 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.017 ohm

26 A

DUAL

R-PDSO-G6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.