Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
127 A |
26.3 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.019 ohm |
24.2 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
305 A |
169 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0058 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
340 A |
228 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0051 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
329 A |
214 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0053 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
314 A |
228 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0056 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
116 A |
67 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0275 ohm |
29 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
228 A |
103 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0093 ohm |
40 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
265 A |
125 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0072 ohm |
40 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
84 A |
46 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0376 ohm |
21.4 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
11.9 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.055 ohm |
16 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.05 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
e4 |
||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
124 A |
22 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0095 ohm |
30 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
204 A |
118 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0115 ohm |
35 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
126 A |
83 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0245 ohm |
29.5 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
165 W |
METAL |
SWITCHING |
1000 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
500 mJ |
10 A |
6 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.3 ohm |
10 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
140 A |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.065 ohm |
30 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
1000 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
500 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
1.3 ohm |
10 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
90 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.044 ohm |
5 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
260 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
165 W |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
85 A |
1000 mJ |
22 A |
6 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.27 ohm |
22 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32.4 A |
97 mJ |
8.2 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.021 ohm |
8.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e0 |
235 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
400 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.3 ohm |
15 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
140 A |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.065 ohm |
30 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
14 A |
28 mJ |
3.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.075 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
1000 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
500 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
1.3 ohm |
10 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
21 W |
PLASTIC/EPOXY |
55 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
47 mJ |
15 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.045 ohm |
17 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32 A |
90 mJ |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.02 ohm |
8 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
260 |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
400 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
92 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.2 ohm |
24 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
85 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.27 ohm |
22 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
1000 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
500 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
1.3 ohm |
10 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
12.4 A |
47 mJ |
3.1 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
3.4 A |
DUAL |
R-PDSO-G8 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
e0 |
235 |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
52 A |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.4 ohm |
13 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
85 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.27 ohm |
22 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
33 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.061 ohm |
16 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
AEC-Q101 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
26 A |
19 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.03 ohm |
4.2 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
|||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
32.8 A |
97 mJ |
7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.021 ohm |
7 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
10.4 A |
60 mJ |
2.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
2.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL |
e0 |
235 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
12.4 A |
60 mJ |
3.1 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.12 ohm |
3.1 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
12.8 A |
28 mJ |
3.2 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.08 ohm |
3.2 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
26 A |
19 mJ |
5.4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.03 ohm |
4.2 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
260 |
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Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
85 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.27 ohm |
22 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
12.4 A |
47 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.11 ohm |
3.1 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
AVALANCHE RATED |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
10.4 A |
60 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.15 ohm |
2.6 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
400 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
92 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.2 ohm |
24 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
52 A |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.4 ohm |
13 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
400 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
92 A |
1000 mJ |
6 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.2 ohm |
24 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
165 W |
METAL |
SWITCHING |
500 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
85 A |
1000 mJ |
22 A |
6 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.27 ohm |
22 A |
SINGLE |
R-MSFM-P6 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
12 A |
47 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD SILVER |
.12 ohm |
3 A |
DUAL |
R-PDSO-G8 |
3 |
AVALANCHE RATED |
e4 |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
26 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
52 A |
17 mJ |
13 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.075 ohm |
3.2 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
260 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.