1.4 W Power Field Effect Transistors (FET) 106

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AO3400A	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0265 ohm	5.7 A	DUAL	R-PDSO-G3						e3	30	260	50 pF
DMG2305UX-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.052 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMG2305UX-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.052 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMP4065S-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.08 ohm	2.4 A	DUAL	R-PDSO-G3	1					e3	30	260	40 pF
IRF7309TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
AO3400	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.028 ohm	5.8 A	DUAL	R-PDSO-G3							NOT SPECIFIED	NOT SPECIFIED	50 pF
IRF7309TRPBF-1	Infineon Technologies	N-CHANNEL AND P-CHANNEL		YES	1.4 W										4 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A			1
AUIRF7309QTR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	40	260
FDMA1028NZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	6 A		3.7 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	32 ns	Nickel/Palladium/Gold (Ni/Pd/Au)	.068 ohm	3.7 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified		MO-229VCCC	e4	NOT SPECIFIED	NOT SPECIFIED	60 pF
DMP2160U-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A		3.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
DMP4065S-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.08 ohm	2.4 A	DUAL	R-PDSO-G3	1					e3	30	260	40 pF
SSM6N815R,LF	Toshiba	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	4 A	10.1 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.142 ohm	2 A	DUAL	R-PDSO-F6	1							260	16 pF
MMFTP3401-AQ	Diotec Semiconductor Ag	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.4 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G3	1				TO-236	e3	10	260	60 pF	AEC-Q101
IRF7304PBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	17 A		3.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260
CSD25485F5T	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.4 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	31 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.07 ohm	5.3 A	BOTTOM	R-XBCC-N3	1					e4	30	260	23 pF
DMP2305UQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.06 ohm	4.2 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
MCQ4459-TP	Micro Commercial Components	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	14 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.046 ohm	6.5 A	DUAL	R-PDSO-G8	1					e3	10	260	90 pF
DMP2130L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.075 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
CPC3710CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.6 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	55 ns	-55 Cel	105 ns		10 ohm		SINGLE	R-PSSO-F3		DRAIN							40 pF
DMN2050L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A		5.9 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.029 ohm	5.9 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP2160UFDB-7	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	13 A		3.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.07 ohm	3.8 A	DUAL	S-PDSO-N6	1		Not Qualified	HIGH RELIABILITY		e4	30	260
AO3418	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		3.8 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.4 W	150 Cel	SILICON		-55 Cel			.055 ohm	3.8 A	DUAL	R-PDSO-G3									25 pF
SI2305B-TP	Micro Commercial Components	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	27 ns	-55 Cel	57 ns	MATTE TIN	.039 ohm	4.2 A	DUAL	R-PDSO-G3	1					e3	10	260	190 pF
TPIC2701N	Texas Instruments	N-CHANNEL	COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	7	3 A	22 mJ		16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	.5 A	DUAL	R-PDIP-T16			Not Qualified		MS-001BB		NOT SPECIFIED	NOT SPECIFIED
TPIC1301DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	11.25 A	17.2 mJ	2.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	80 ns		65 ns		.275 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC1321LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	4 A	96 mJ	1.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		180 ns		.4 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5403DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	11.25 A	17.2 mJ	2.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	85 ns		65 ns		.27 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5424LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5621LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	3 A	18 mJ	1 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		82 ns		.48 ohm	1 A	DUAL	R-PDSO-G20			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	50 pF
CSD17585F5	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.4 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.033 ohm	3.6 A	BOTTOM	R-XBCC-N3	1					e4	30	260	7.4 pF
CSD17585F5T	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.4 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.033 ohm	3.6 A	BOTTOM	R-XBCC-N3	1					e4	30	260	7.4 pF
CSD25485F5	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.4 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	31 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.07 ohm	5.3 A	BOTTOM	R-XBCC-N3	1					e4	30	260	23 pF
FTD2017C	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FTD2017C-TL	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
EFC4626R-TR	Onsemi	N-CHANNEL		YES	1.4 W										5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A									NOT SPECIFIED	NOT SPECIFIED
EMH2407R-TL	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
EFC2K101NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.4 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel					BOTTOM	R-PBCC-N6							NOT SPECIFIED	NOT SPECIFIED
EMH2411R-TL-H	Onsemi	N-CHANNEL		YES	1.4 W										5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		5 A			1					e6
NTLUD3C20CZTAG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	21 A		6.4 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.023 ohm	6.4 A	DUAL	S-PDSO-N6							NOT SPECIFIED	NOT SPECIFIED
EMH2411R	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
EMH2407	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FTD2019A	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
EMH2417R-TL-H	Onsemi	N-CHANNEL		YES	1.4 W										11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		11 A			1					e6		260
EMH2412	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
EMH2407R-TL-H	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		6 A			1					e6
NTLUD3C20CZTBG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	21 A		6.4 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.023 ohm	6.4 A	DUAL	S-PDSO-N6							NOT SPECIFIED	NOT SPECIFIED
FW241	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
FDMA1028NZTR	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	6 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	32 ns		.068 ohm	3.7 A	DUAL	S-PDSO-N6		DRAIN			MO-229VCCC				60 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.