1.4 W Power Field Effect Transistors (FET) 106

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
ECH8411	Onsemi	N-CHANNEL	SINGLE	YES	1.4 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							9 A
ECH8653	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				7.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7.5 A
ECH8664R	Onsemi	N-CHANNEL		YES	1.4 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7 A
FDMA1025P	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	6 A		3.1 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.22 ohm	3.1 A	DUAL	S-PDSO-N6	1		Not Qualified			e4	30	260
2N7334	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	1 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.7 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified		MO-036AB	e0
IRHG567110	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	.96 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified		MO-036AB	e0
IRHG54110	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.6 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRFG110	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	1 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRHG3214	Infineon Technologies	N-CHANNEL	SINGLE	NO	1.4 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.5 A
IRHG58110	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.6 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRFG9110	Infineon Technologies	P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.73 ohm	.75 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRHG57110	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.8 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	37 ns	-55 Cel	45 ns	TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0				RH - 100K Rad(Si)
IRHG57110SCS	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.8 A	14	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	37 ns	-55 Cel	45 ns		.29 ohm	1.8 A	DUAL	R-CDIP-T14					MO-036AB		NOT SPECIFIED	NOT SPECIFIED		MIL-19500
IRHG7214	Infineon Technologies	N-CHANNEL	SINGLE	NO	1.4 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		.5 A								e0
2N7336	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.7 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified		MO-036AB	e0
IRHG53110	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.6 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRHG6110	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	56 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.7 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRHG63110	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	56 mJ	1 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.7 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRFG6110	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Not Qualified	HIGH RELIABILITY	MO-036AB	e0
IRHG563110	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	.96 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	1.6 A	DUAL	R-CDIP-T14			Not Qualified		MO-036AB	e0
IRHG57110PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6.4 A	130 mJ	1.8 A	14	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	37 ns	-55 Cel	45 ns		.29 ohm	1.8 A	DUAL	R-CDIP-T14					MO-036AB		NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
IRF7314PBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A	150 mJ	4.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.058 ohm	5.3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
JANTXV2N7336	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500/598
JANTXV2N7335	Infineon Technologies	P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.73 ohm	.75 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500/599
JANTX2N7335	Infineon Technologies	P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.73 ohm	.75 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500/599
IRF7309PBF-1	Infineon Technologies	N-CHANNEL AND P-CHANNEL		YES	1.4 W										4 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A			1
JANTXV2N7334	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	1 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500
IRF7306PBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.1 ohm	3.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260
IRF7307PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A		3.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.05 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7301PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A		4.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
JANTX2N7336	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	.75 A	14	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500/598
IRF7309PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
JANTX2N7334	Infineon Technologies	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	4 A	75 mJ	1 A	14	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	1 A	DUAL	R-CDIP-T14			Qualified	HIGH RELIABILITY	MO-036AB	e0				MIL-19500
IRF7303PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.05 ohm	4.9 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260
IRF7311PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	100 mJ	4.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.029 ohm	6.6 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
PMN50EPE	Nexperia	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.045 ohm	4.6 A	DUAL	R-PDSO-G6	1			LOGIC LEVEL COMPATIBLE		e3	30	260	84 pF	IEC-60134
DMC2025UFDB-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN				e4	30	260	77 pF	MIL-STD-202
DMS2220LFDB-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	12 A		3.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.095 ohm	3.5 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
DMC2025UFDBQ-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN				e4		260	77 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMC2025UFDB-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN				e4	30	260	77 pF	MIL-STD-202
DMC2025UFDBQ-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN				e4		260	77 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMN3052L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A		5.4 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.032 ohm	5.4 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN2104L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		4.3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.053 ohm	4.3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3112S-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.8 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.057 ohm	5.8 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP3130L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.077 ohm	3.5 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3025LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.4 W							1			7.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		7.2 A			1					e3	30	260
DMP3120L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A		2.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.12 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN2024UQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	6.8 A	DUAL	R-PDSO-G3	1					e3	30	260	38 pF	AEC-Q101; IATF 16949; MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.