1.7 W Power Field Effect Transistors (FET) 53

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
PMPB27EPAX	Nexperia	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	25 A	26.8 mJ	6.1 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.029 ohm	6.1 A	DUAL	S-PDSO-N6	1	DRAIN				e3	30	260	150 pF	AEC-Q101; IEC-60134
ZXMP10A17E6TA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.7 A		1.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.35 ohm	1.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
ZXMP10A17E6QTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.7 A		1.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.35 ohm	1.3 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
IRF7341QTR	International Rectifier	N-CHANNEL		YES	1.7 W						ENHANCEMENT MODE				5.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN LEAD		5.1 A			1					e0
IRF7341Q	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ	5.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.05 ohm	5.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e0
SI2304DDS-T1-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	30 ns	-55 Cel	25 ns	TIN	.06 ohm	3.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	17 pF
SI4850EY	Vishay Intertechnology	N-CHANNEL	SINGLE		1.7 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							6 A			1
DMN10H170SVT-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6	1					e3		260	25 pF	MIL-STD-202
DMP3028LSD-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	6 A	DUAL	R-PDSO-G8	1					e3	30	260	110 pF	MIL-STD-202
DMN3032LFDBQ-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMN10H170SVTQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6						e3		260	25 pF	AEC-Q101; MIL-STD-202
DMN3032LFDB-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6	1	DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMN3032LFDBQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
TPIC2601KTD	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	10 A	105 mJ	2 A	15	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.3 ohm	2 A	SINGLE	R-PSSO-G15			Not Qualified	ESD PROTECTED, AVALANCHE RATED
TPIC2401KTA	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	6 A	36 mJ	1.5 A	9	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.36 ohm	1.5 A	SINGLE	R-PSSO-G9			Not Qualified	ESD PROTECTED
TPIC2601KTC	Texas Instruments	N-CHANNEL	COMMON SOURCE, 6 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	10 A	105 mJ	2 A	15	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.3 ohm	2 A	SINGLE	R-PSFM-G15		SOURCE	Not Qualified	ESD PROTECTED
NTLUD4C26NTAG	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	22 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.021 ohm	4.8 A	DUAL	S-PDSO-N6	1	DRAIN				e3	30	260	27 pF
FW344	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.084 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified
NCV8402AT2G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	42 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1		150 mJ	2 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel			.2 ohm	2 A	DUAL	S-PDSO-N6							NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
STS1DN45K3	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2 A		.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	3.8 ohm	.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
PMPB15XN,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	1.7 W						ENHANCEMENT MODE	1			10.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		10.4 A			1					e3	30	260
PMPB12UN,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	31 A		7.9 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.018 ohm	7.9 A	DUAL	S-PDSO-N6		DRAIN				e3				IEC-60134
BSP125	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.48 A		.12 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	45 ohm	.12 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
BSP123	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.48 A			4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	6 ohm	.37 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3				CECC
BSP129	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	1.4 A		.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	20 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
BSP135	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.48 A		.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	45 ohm	.12 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
DMP2033UVT-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.065 ohm	4.2 A	DUAL	R-PDSO-G6	1					e3	30	260	63 pF	AEC-Q101
DMP2033UVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		4.2 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.065 ohm	4.2 A	DUAL	R-PDSO-G6	1					e3	30	260	63 pF	AEC-Q101
DMN4060SVTQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	23 A	18 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.046 ohm	4.3 A	DUAL	R-PDSO-G6						e3			42.5 pF	AEC-Q101; MIL-STD-202
DMN4060SVTQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	23 A	18 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.046 ohm	4.3 A	DUAL	R-PDSO-G6						e3			42.5 pF	AEC-Q101; MIL-STD-202
DMP3050LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	4.8 A	DUAL	R-PDSO-G8	1					e3	30	260
DMP3018SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	104 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	10.5 A	DUAL	R-PDSO-G8						e3	30	260	358 pF	IATF 16949; MIL-STD-202
DMT6005LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	98 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0072 ohm	13.5 A	DUAL	R-PDSO-G8						e3		260	60 pF	MIL-STD-202
DMN10H170SVTQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6						e3		260	25 pF	AEC-Q101; MIL-STD-202
DMN3032LFDB-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	25 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	6.2 A	DUAL	S-PDSO-N6		DRAIN		HIGH RELIABILITY		e4		260	44 pF	AEC-Q101
DMN10H170SVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6	1					e3		260	25 pF	MIL-STD-202
UPA1759G	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	.625 mJ	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.24 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified			e0
2SJ76	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.7 W	PLASTIC/EPOXY	SWITCHING	140 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		.5 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified		TO-220AB	e0
UPA1757G	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.032 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
FY5AEJ-03	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.03 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified
UPA1753	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.04 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified
UPA1758G-A	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH	.18 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified			e6	10	260
2SJ79	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.7 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		.5 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified		TO-220AB	e0
2SJ77	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.7 W	PLASTIC/EPOXY	SWITCHING	160 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		.5 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified		TO-220AB	e0
UPA1857GR-9JG-E2-A	Renesas Electronics	N-CHANNEL		YES	1.7 W						ENHANCEMENT MODE				3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.8 A
UPA1857GR-9JG-E1-AT	Renesas Electronics	N-CHANNEL		YES	1.7 W						ENHANCEMENT MODE				3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.8 A
UPA1857GR-9JG-E1-A	Renesas Electronics	N-CHANNEL		YES	1.7 W										3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		3.8 A								e6
UPA1752	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.061 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.