22 W Power Field Effect Transistors (FET) 42

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMQ86530L

Onsemi

N-CHANNEL

COMPLEX

YES

22 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

50 A

8 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ns

-55 Cel

45 ns

NICKEL PALLADIUM GOLD SILVER

.0175 ohm

8 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e4

30

260

15 pF

SI7972DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

45 ns

.018 ohm

8 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

20 pF

SI7272DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

22 W

UNSPECIFIED

SWITCHING

30 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

60 A

25 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0093 ohm

15 A

DUAL

R-XDSO-C6

1

DRAIN

Not Qualified

e3

30

260

IPD60R1K5PFD7SAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

7 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.5 ohm

3.6 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

IPU95R3K7P7AKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2 mJ

2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

3.7 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

NVTFS5826NLWFTWG

Onsemi

N-CHANNEL

SINGLE

YES

22 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

20 A

1

e3

30

260

NVTFS5826NLWFTAG

Onsemi

N-CHANNEL

SINGLE

YES

22 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

20 A

1

e3

30

260

FDPF390N15A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

78 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.04 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRA-LOW RESISTANCE

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

STL3N65M5

STMicroelectronics

N-CHANNEL

SINGLE

YES

22 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

STL3N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2.8 A

275 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

-55 Cel

1.8 ohm

.7 A

DUAL

S-PDSO-N8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

.2 pF

IRFE9130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

25 A

165 mJ

6.1 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.345 ohm

6.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHE7230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

240 mJ

4.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

5.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

RADIATION HARDENED

e0

IRHE8230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

240 mJ

4.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

5.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

RADIATION HARDENED

e0

IRHE7130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

8 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHE8130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

8 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRFE430

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

11 A

.31 mJ

2.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRFE9230

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 A

171 mJ

3.6 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.68 ohm

4 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRFE130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

134 mJ

7.4 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.207 ohm

8 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRFE230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

98 mJ

4.8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.46 ohm

5.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IPU50R2K0CEBKMA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

22 W

1

2.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

NOT SPECIFIED

NOT SPECIFIED

IRFE330

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

12 A

.51 mJ

3 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.15 ohm

3 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

AVALANCHE RATED

e0

IPU80R2K4P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5.3 A

4 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2.4 ohm

2.5 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPU95R3K7P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2 mJ

2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

3.7 ohm

2 A

SINGLE

R-PSIP-T3

TO-251

e3

IPD60R1K5PFD7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

7 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.5 ohm

3.6 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

IPD50R2K0CEBTMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

22 W

1

2.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

NOT SPECIFIED

NOT SPECIFIED

IPD80R2K4P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.3 A

4 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2.4 ohm

2.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

260

IPA60R360P7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

27 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.36 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPAN60R360P7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

27 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.36 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

DMC3021LK4-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

14 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.021 ohm

6.7 A

SINGLE

R-PSSO-G4

1

HIGH RELIABILITY

e3

30

260

TPN4R203NC(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

53 A

TPN4R203NC(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

53 A

TPN8R903NL(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TPN8R903NL(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

UPA1740TP-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

10

260

UPA2702TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

65 A

25.6 mJ

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0172 ohm

35 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA2702TP-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

22 W

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

35 A

260

UPA2702TP-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

65 A

25.6 mJ

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0172 ohm

35 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA2702TP-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

22 W

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

35 A

260

IRLR110A

Samsung

N-CHANNEL

SINGLE

YES

22 W

ENHANCEMENT MODE

1

4.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

IRLU110A

Samsung

N-CHANNEL

SINGLE

NO

22 W

ENHANCEMENT MODE

1

4.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

IRFS610A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

42 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRFS614A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

55 mJ

2.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2 ohm

2.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.