25 W Power Field Effect Transistors (FET) 535

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
JANTX2N6796	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	.195 ohm	8 A	BOTTOM	O-MBCY-W3		DRAIN	Qualified	HIGH RELIABILITY	TO-205AF	e0				MIL-19500
JANTX2N6796U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	134 mJ	8 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.207 ohm	8 A	QUAD	R-CQCC-N15		SOURCE	Qualified	HIGH RELIABILITY		e0				MIL-19500/557
JANTXV2N6796	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	.195 ohm	8 A	BOTTOM	O-MBCY-W3		DRAIN	Qualified	HIGH RELIABILITY	TO-205AF	e0				MIL-19500
FDMC2523P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	SQUARE	ENHANCEMENT MODE	1	12 A		3 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	1.5 ohm	3 A	DUAL	S-PDSO-F5	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
IRFR9014PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.5 ohm	5.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
JANTX2N6849	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/564
IXTY01N100D	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1	.4 A		.4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.1 W	150 Cel	SILICON	-55 Cel	MATTE TIN	80 ohm	.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260
2N6849	Infineon Technologies	P-CHANNEL	SINGLE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	.3 ohm	6.5 A	BOTTOM	O-MBCY-W3			Not Qualified	AVALANCHE RATED	TO-205AF	e0				MILITARY STANDARD (USA)
IRFR310TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.7 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	3.6 ohm	1.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
JANS2N6849	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Qualified		TO-205AF	e0				MIL-19500/564
JANTXV2N6849	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/564
TK30A06N1,S4X(S	Toshiba	N-CHANNEL	SINGLE	NO	25 W						ENHANCEMENT MODE	1			43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					43 A
JANTXV2N6796U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	134 mJ	8 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.207 ohm	8 A	QUAD	R-CQCC-N15		SOURCE	Qualified	HIGH RELIABILITY		e0				MIL-19500/557
IRFR9014TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.5 ohm	5.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
IRFR9014TRPBF-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				31 pF
JANTX2N6849U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	25 A	165 mJ	6.5 A	15	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.345 ohm	6.5 A	QUAD	R-CQCC-N15		SOURCE	Qualified			e0				MIL-19500/564
IRFR9110TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	140 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	1.2 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
STP11NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.45 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFR9014TRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.5 ohm	5.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
FQD7N10LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	23.2 A	50 mJ	5.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.38 ohm	5.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQD5P10TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.4 A	55 mJ	3.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.05 ohm	3.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRFR9014	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
IRFR9014TRL	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
IRFU210PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	95 mJ	2.6 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	1.5 ohm	2.6 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-251	e3	30	260	15 pF
IRFR9014PBF-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				31 pF
JANTXV2N6849U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	25 A	165 mJ	6.5 A	15	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.345 ohm	6.5 A	QUAD	R-CQCC-N15		SOURCE	Qualified			e0				MIL-19500/564
2SJ649-AZ	Renesas Electronics	P-CHANNEL	SINGLE	NO	25 W							1			20 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A									10	260
SQJ962EP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	5 mJ	8 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.06 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260
STP16NF06LFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	127 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.1 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e0
IRFR110TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	100 mJ	4.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.54 ohm	4.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
IRLR110TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A		4.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.54 ohm	4.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3
IXTY01N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	.4 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	80 ohm	.1 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA	e3	10	260	2 pF
IRFR9110PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	140 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	1.2 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
JANTXV2N6798	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	200 V	WIRE	ROUND	ENHANCEMENT MODE	1	22 A	2 mJ	5.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.42 ohm	5.5 A	BOTTOM	O-MBCY-W3		DRAIN	Qualified	HIGH RELIABILITY	TO-205AF	e0				MIL-19500/557
IRFF9130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Not Qualified		TO-205AF	e0
IRFR9014TR	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
IXTP01N100D	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	.4 A		.4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	1.1 W	150 Cel	SILICON	-55 Cel		80 ohm	.4 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
JANSR2N7494U5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	156 mJ	12 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.07 ohm	12 A	QUAD	R-CQCC-N15		SOURCE	Qualified	RADIATION HARDENED		e0
JANSR2N7500U5	Infineon Technologies	N-CHANNEL	SINGLE	YES	25 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	130 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	36 A	56 mJ	9 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.13 ohm	9 A	BOTTOM	S-CBCC-N15			Qualified	RADIATION HARDENED		e0
IRL6297SDTRPBF	Infineon Technologies	N-CHANNEL		YES	25 W						ENHANCEMENT MODE				58 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					58 A			1
2SJ589LS	Sanyo Electric	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	60 A		15 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.115 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
FDMC7696	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	21 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.0115 ohm	12 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
IRLR014TRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	27.4 mJ	7.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.2 ohm	7.7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252		40	260
TK30A06N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	95 A	38 mJ	43 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.015 ohm	43 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB
BSZ130N03LSGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	140 A	9 mJ	35 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.013 ohm	28 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
IXTP05N100M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY		1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ	.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	17 ohm	.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e1
AOWF4S60	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	NO	25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4 A
IRFR014TRLPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	27.4 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.2 ohm	7.7 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				29 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.