Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
79 A |
123 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.037 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
|||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
25 W |
ENHANCEMENT MODE |
.86 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
.86 A |
|||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
25 W |
ENHANCEMENT MODE |
.86 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
.86 A |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
165 mJ |
6.5 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.35 ohm |
6.5 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
HIGH RELIABILITY, RADIATION HARDENED |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.185 ohm |
8 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
156 mJ |
12 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.07 ohm |
12 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
47 A |
173 mJ |
11.7 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
11.7 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
18 A |
157 mJ |
4.5 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.54 ohm |
4.5 A |
BOTTOM |
O-CBCY-W3 |
Not Qualified |
TO-205AF |
e0 |
||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
16 A |
75 mJ |
4 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.8 ohm |
4 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
MILITARY STANDARD (USA) |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
500 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
10 A |
154 mJ |
2.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.77 ohm |
2.5 A |
BOTTOM |
O-MBCY-W3 |
Qualified |
RADIATION HARDENED |
TO-205AF |
e0 |
MIL-19500/676 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.24 ohm |
8 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
29 A |
110 mJ |
7.3 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.22 ohm |
7.3 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
30 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
520 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.045 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
26.8 A |
240 mJ |
6.7 A |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
75 ns |
-55 Cel |
170 ns |
.24 ohm |
6.7 A |
BOTTOM |
O-CBCY-W3 |
DRAIN |
TO-205AF |
MIL-19500 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
240 mJ |
5.5 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.36 ohm |
5.5 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
RADIATION HARDENED |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
46.8 A |
87 mJ |
12 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
11.7 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.24 ohm |
8 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
47 A |
173 mJ |
11.7 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
11.7 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.185 ohm |
8 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.4 A |
50 mJ |
1.8 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
100 ns |
3 ohm |
1.8 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
TO-252 |
||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
165 mJ |
6.5 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.35 ohm |
6.5 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
RADIATION HARDENED |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
47 A |
173 mJ |
11.7 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
11.7 A |
BOTTOM |
O-MBCY-W3 |
Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
MIL-19500/701 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
130 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
42 A |
164 mJ |
10.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.1 ohm |
10.5 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
16 A |
171 mJ |
4 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.92 ohm |
4 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
270 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.048 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-39 |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
46.8 A |
87 mJ |
11.7 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
11.7 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Qualified |
RADIATION HARDENED |
e0 |
MIL-19500/700 |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
171 mJ |
4 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.92 ohm |
4 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Qualified |
e0 |
MIL-19500/630 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
26.8 A |
240 mJ |
6.7 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
75 ns |
-55 Cel |
170 ns |
TIN LEAD |
.24 ohm |
6.7 A |
BOTTOM |
O-CBCY-W3 |
DRAIN |
Not Qualified |
TO-205AF |
e0 |
RH - 100K Rad(Si) |
|||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
156 mJ |
12 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.07 ohm |
12 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 W |
1 |
9.1 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
9.1 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
26 A |
165 mJ |
6.5 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.35 ohm |
6.5 A |
BOTTOM |
O-CBCY-W3 |
Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
MIL-19500/630 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
22 A |
240 mJ |
5.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.36 ohm |
5.5 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
RADIATION HARDENED |
TO-39 |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
240 mJ |
5.5 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.36 ohm |
5.5 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Qualified |
RADIATION HARDENED |
e0 |
MIL-19500/601 |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
171 mJ |
4 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.8 ohm |
4 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
RADIATION HARDENED |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
270 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
65 ns |
.048 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
Qualified |
AVALANCHE RATED |
TO-39 |
NOT SPECIFIED |
NOT SPECIFIED |
18 pF |
MIL-19500/701 |
||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
29 A |
110 mJ |
7.3 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.22 ohm |
7.3 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SINGLE |
YES |
25 W |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
UNCASED CHIP |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 A |
UPPER |
R-XUUC-N3 |
1 |
DRAIN |
Qualified |
RADIATION HARDENED |
MIL-19500/657A |
||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
165 mJ |
6.5 A |
15 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.35 ohm |
6.5 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Qualified |
e0 |
MIL-19500/630 |
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Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
18 A |
157 mJ |
4.5 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
55 ns |
-55 Cel |
170 ns |
TIN LEAD |
.54 ohm |
4.5 A |
BOTTOM |
O-CBCY-W3 |
DRAIN |
Not Qualified |
TO-205AF |
e0 |
RH - 100K Rad(Si) |
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Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
30 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
520 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.045 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
156 mJ |
12 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.07 ohm |
12 A |
QUAD |
R-CQCC-N15 |
SOURCE |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 W |
CERAMIC, METAL-SEALED COFIRED |
200 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
25.2 A |
40 mJ |
6.3 A |
15 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
6.3 A |
BOTTOM |
S-CBCC-N15 |
Qualified |
RADIATION HARDENED |
e0 |
MIL-19500/707 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SINGLE |
YES |
25 W |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.5 A |
3 |
UNCASED CHIP |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
6.5 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
RADIATION HARDENED |
e0 |
MIL-19500/657A |
|||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
18 A |
157 mJ |
4.5 A |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
55 ns |
-55 Cel |
170 ns |
.54 ohm |
4.5 A |
BOTTOM |
O-CBCY-W3 |
DRAIN |
TO-205AF |
NOT SPECIFIED |
NOT SPECIFIED |
RH - 100K Rad(Si) |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.185 ohm |
8 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
270 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.048 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-39 |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
48 A |
270 mJ |
12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.048 ohm |
12 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
AVALANCHE RATED |
TO-39 |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
32 A |
130 mJ |
8 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.185 ohm |
8 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.