25 W Power Field Effect Transistors (FET) 535

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9735-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

123 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.037 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

BLF8G27LS-100PJ

NXP Semiconductors

N-CHANNEL

25 W

ENHANCEMENT MODE

.86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

.86 A

BLF8G27LS-100PU

NXP Semiconductors

N-CHANNEL

25 W

ENHANCEMENT MODE

.86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

.86 A

IRHE93130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

26 A

165 mJ

6.5 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

6.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY, RADIATION HARDENED

e0

IRHF4130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.185 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-205AF

e0

IRHE57Z30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

156 mJ

12 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

12 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

e0

IRHF57130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

47 A

173 mJ

11.7 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

11.7 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHF593230

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

18 A

157 mJ

4.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.54 ohm

4.5 A

BOTTOM

O-CBCY-W3

Not Qualified

TO-205AF

e0

2N6851

Infineon Technologies

P-CHANNEL

SINGLE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

16 A

75 mJ

4 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

4 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

MILITARY STANDARD (USA)

JANSR2N7464T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

500 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

154 mJ

2.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.77 ohm

2.5 A

BOTTOM

O-MBCY-W3

Qualified

RADIATION HARDENED

TO-205AF

e0

MIL-19500/676

IRHE4130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

8 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHF54230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

29 A

110 mJ

7.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

7.3 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHF54Z30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

30 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

520 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.045 ohm

12 A

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHF597130SCV

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

26.8 A

240 mJ

6.7 A

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

75 ns

-55 Cel

170 ns

.24 ohm

6.7 A

BOTTOM

O-CBCY-W3

DRAIN

TO-205AF

MIL-19500

IRHE3230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

240 mJ

5.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

5.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

RADIATION HARDENED

e0

IRHE54034

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

46.8 A

87 mJ

12 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

11.7 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

e0

IRHE3130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

8 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHF58130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

47 A

173 mJ

11.7 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

11.7 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHF8130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.185 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-205AF

e0

Q67040-S4420

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.4 A

50 mJ

1.8 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

100 ns

3 ohm

1.8 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-252

IRHE9130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

26 A

165 mJ

6.5 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

6.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

RADIATION HARDENED

e0

JANSH2N7493T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

47 A

173 mJ

11.7 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

11.7 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/701

IRHF57133SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

130 V

WIRE

ROUND

ENHANCEMENT MODE

1

42 A

164 mJ

10.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

10.5 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHF93230

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

16 A

171 mJ

4 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.92 ohm

4 A

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-205AF

e0

IRHF57034

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

270 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.048 ohm

12 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-39

e0

JANSR2N7495U5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

46.8 A

87 mJ

11.7 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

11.7 A

QUAD

R-CQCC-N15

SOURCE

Qualified

RADIATION HARDENED

e0

MIL-19500/700

JANSF2N7390U

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 A

171 mJ

4 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.92 ohm

4 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/630

IRHF597130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

26.8 A

240 mJ

6.7 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

75 ns

-55 Cel

170 ns

TIN LEAD

.24 ohm

6.7 A

BOTTOM

O-CBCY-W3

DRAIN

Not Qualified

TO-205AF

e0

RH - 100K Rad(Si)

IRHE58Z30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

156 mJ

12 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

12 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

e0

IRHF67230

Infineon Technologies

N-CHANNEL

SINGLE

NO

25 W

1

9.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.1 A

NOT SPECIFIED

NOT SPECIFIED

JANSF2N7389

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

26 A

165 mJ

6.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

6.5 A

BOTTOM

O-CBCY-W3

Qualified

HIGH RELIABILITY

TO-205AF

e0

MIL-19500/630

IRHF8230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

22 A

240 mJ

5.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

5.5 A

BOTTOM

O-MBCY-W3

Not Qualified

RADIATION HARDENED

TO-39

e0

JANSH2N7262U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

240 mJ

5.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

5.5 A

QUAD

R-CQCC-N15

SOURCE

Qualified

RADIATION HARDENED

e0

MIL-19500/601

IRHE9230

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 A

171 mJ

4 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

4 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

RADIATION HARDENED

e0

JANSR2N7492T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

270 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.048 ohm

12 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-39

NOT SPECIFIED

NOT SPECIFIED

18 pF

MIL-19500/701

IRHF58230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

29 A

110 mJ

7.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

7.3 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

JANKCAF2N7390

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SINGLE

YES

25 W

UNSPECIFIED

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 A

UPPER

R-XUUC-N3

1

DRAIN

Qualified

RADIATION HARDENED

MIL-19500/657A

JANSF2N7389U

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

26 A

165 mJ

6.5 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

6.5 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/630

IRHF597230

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

18 A

157 mJ

4.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

170 ns

TIN LEAD

.54 ohm

4.5 A

BOTTOM

O-CBCY-W3

DRAIN

Not Qualified

TO-205AF

e0

RH - 100K Rad(Si)

IRHF53Z30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

30 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

520 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.045 ohm

12 A

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRHE53Z30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

156 mJ

12 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

12 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

e0

JANSR2N7501U5

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

25.2 A

40 mJ

6.3 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6.3 A

BOTTOM

S-CBCC-N15

Qualified

RADIATION HARDENED

e0

MIL-19500/707

JANKCAF2N7389

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SINGLE

YES

25 W

UNSPECIFIED

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

6.5 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6.5 A

UPPER

R-XUUC-N3

DRAIN

Qualified

RADIATION HARDENED

e0

MIL-19500/657A

IRHF597230PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

18 A

157 mJ

4.5 A

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

170 ns

.54 ohm

4.5 A

BOTTOM

O-CBCY-W3

DRAIN

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

IRHF7130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.185 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-205AF

e0

IRHF58034

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

270 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.048 ohm

12 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-39

e0

IRHF53034

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

270 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.048 ohm

12 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-39

e0

IRHF3130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.185 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-205AF

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.