500 W Power Field Effect Transistors (FET) 116

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MRF151G	TE Connectivity	N-CHANNEL			500 W						ENHANCEMENT MODE				40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							40 A
FDA59N30	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	236 A	1734 mJ	59 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.056 ohm	59 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING		e3	NOT SPECIFIED	NOT SPECIFIED
MRF141G	TE Connectivity	N-CHANNEL			500 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
FDBL86210_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	500 W							1			169 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							169 A			1							245
FDBL86210-F085	Onsemi	N-CHANNEL	SINGLE	YES	500 W							1			169 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn) - annealed		169 A			1					e3	30	260
IXFH26N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.25 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247	e3	10	260	8 pF
IPW65R041CFDFKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	255 A	2185 mJ	68.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.041 ohm	68.5 A	SINGLE	R-PSFM-T3					TO-247	e3
AOB290L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	YES	500 W						ENHANCEMENT MODE	1			140 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							140 A
IPW65R041CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	255 A	2185 mJ	68.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.041 ohm	68.5 A	SINGLE	R-PSFM-T3					TO-247	e3
IPW65R041CFDXK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	255 A	2185 mJ	68.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.041 ohm	68.5 A	SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED
IXFH69N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ	69 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.049 ohm	69 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXTP60N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.04 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				72 pF
MSC025SMA120B4	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	275 A		103 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			.031 ohm	103 A	SINGLE	R-PSFM-T4		DRAIN			TO-247
AOTL66912	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1520 A	405 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0025 ohm	380 A	SINGLE	R-PSSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	55 pF
MSC025SMA120B	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	275 A		103 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			.031 ohm	103 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AD		NOT SPECIFIED	NOT SPECIFIED
IRFP27N60KPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	530 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.22 ohm	27 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3	30	260
BLF888,112	NXP Semiconductors	N-CHANNEL			500 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel																30	260
AOTL66518	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	710 A	735 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.005 ohm	214 A	SINGLE	R-PSSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	5 pF
FDBL0630N150	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		502 mJ	169 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	80 ns	-55 Cel	130 ns	Matte Tin (Sn) - annealed	.0063 ohm	169 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	245	16 pF
IXFK100N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	560 A		100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.012 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
STE140NF20D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	560 A	800 mJ	140 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.012 ohm	140 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE ENERGY RATED
IXFK48N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	192 A		48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.1 ohm	48 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264	e1	10	260
IXFR64N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	4000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.094 ohm	45 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED		e1	10	260	93 pF	UL RECOGNIZED
IXTA60N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	700 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.04 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	72 pF
IXFX21N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	2500 mJ	21 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.5 ohm	21 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFH30N60X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.155 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				14 pF
IXFK27N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A		27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.3 ohm	27 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK73N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	292 A		73 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.045 ohm	73 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264	e1	10	260
IXFN48N50Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	192 A	2500 mJ	48 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	100 ohm	48 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFR24N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	2000 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.49 ohm	18 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFX90N20Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	2500 mJ	90 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.022 ohm	90 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTQ69N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ	69 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Tin (Sn)	.049 ohm	69 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
PCFA86210F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	UNSPECIFIED		150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		502 mJ		2	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0063 ohm	169 A	UPPER	R-XUUC-N2							NOT SPECIFIED	NOT SPECIFIED	16 pF	AEC-Q101
FCH060N80-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	174 A	2317 mJ	58 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	276 ns	-55 Cel	590 ns	Matte Tin (Sn) - annealed	.06 ohm	58 A	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	10 pF
NVH4L018N075SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	750 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	483 A	162 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel		MATTE TIN	.018 ohm	140 A	SINGLE	R-PSFM-T4	1				TO-247	e3	30	260	31 pF	AEC-Q101
HUF75852G3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.016 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
NTHL033N65S3HF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	175 A	1250 mJ	70 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.033 ohm	70 A	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
HUFA75852G3-F085	Onsemi	N-CHANNEL	SINGLE	NO	500 W							1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							75 A
TSD4M350F	STMicroelectronics				500 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							50 A
TSD20N100F	STMicroelectronics				500 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A
IRFK4H250	STMicroelectronics				500 W							4			68 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							68 A
TSD4M450V	STMicroelectronics				500 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							45 A
STE250NS10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	UNSPECIFIED	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	880 A	800 mJ	220 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0055 ohm	220 A	UPPER	R-XUFM-X4	NOT APPLICABLE	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STE110NS20FD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	UNSPECIFIED	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	440 A	750 mJ	110 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.024 ohm	110 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
TSD4M150V	STMicroelectronics				500 W							1			135 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							135 A
TSD4M151V	STMicroelectronics				500 W							1			135 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							135 A
TSD20N100V	STMicroelectronics				500 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A
TSD4M451V	STMicroelectronics				500 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							45 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.