500 W Power Field Effect Transistors (FET) 116

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TSD4M250V	STMicroelectronics				500 W							1			110 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					110 A
IRFK4H450	STMicroelectronics				500 W							4			44 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					44 A
TSD4M250F	STMicroelectronics				500 W							1			110 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					110 A
TSD4M350V	STMicroelectronics				500 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
TSD180N10F	STMicroelectronics				500 W							1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					180 A
TSD40N50DV	STMicroelectronics				500 W							1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
TSD180N10V	STMicroelectronics				500 W							1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					180 A
TSD40N50DF	STMicroelectronics				500 W							1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
TSD4M351V	STMicroelectronics				500 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
TSD4M450F	STMicroelectronics				500 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					45 A
IRFK4H150	STMicroelectronics				500 W							4			90 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					90 A
TSD250N05F	STMicroelectronics				500 W							1			250 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					250 A
TSD250N05V	STMicroelectronics				500 W							1			250 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					250 A
TSD4M151F	STMicroelectronics				500 W							1			135 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					135 A
TSD5MG40F	STMicroelectronics				500 W							1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					17 A
TSD4M251V	STMicroelectronics				500 W							1			110 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					110 A
TSD4M150F	STMicroelectronics				500 W							1			135 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					135 A
TSD4M251F	STMicroelectronics				500 W							1			110 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					110 A
TSD5MG40V	STMicroelectronics				500 W							1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					17 A
TSD4M451F	STMicroelectronics				500 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					45 A
TSD4M351F	STMicroelectronics				500 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
STW220NF75	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	2500 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0044 ohm	120 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
STW240NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	3500 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0035 ohm	120 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
IRFK2D151	Infineon Technologies				500 W							1			72 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					72 A
IRL40T209ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	875 mJ	300 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.00072 ohm	300 A	SINGLE	R-PSSO-F8	1	DRAIN				e3
IRFK4H351	Infineon Technologies				500 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
IRFK2D251	Infineon Technologies				500 W							1			54 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					54 A
IRFK4H151	Infineon Technologies				500 W							1			145 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					145 A
IRL40T209	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	875 mJ	300 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.00072 ohm	300 A	SINGLE	R-PSSO-F8	1	DRAIN				e3
IRFK4H251	Infineon Technologies				500 W							1			108 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					108 A
IRFK2D351	Infineon Technologies				500 W							1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					25 A
IRFK4H451	Infineon Technologies				500 W							1			44 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					44 A
IPW65R041CFDFKSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	255 A	2185 mJ	68.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin (Sn)	.041 ohm	68.5 A	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
BUK9J0R9-40H	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	600 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.0026 ohm	220 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	760 pF	AEC-Q101; IEC-60134
SSM6K201FE	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4.6 A		2.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.186 ohm	2.3 A	DUAL	R-PDSO-F6			Not Qualified
PM50150K	Renesas Electronics			NO	500 W	UNSPECIFIED			UNSPECIFIED	RECTANGULAR		1			150 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				.08 ohm	150 A	UPPER	R-XUFM-X8			Not Qualified
LSIC1MO120G0025	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	-55 Cel		.032 ohm	100 A	SINGLE	R-PSFM-T4		DRAIN		ULTRA LOW RESISTANCE	TO-247AD				14 pF
IXFP26N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.25 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				8 pF
IXTQ60N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.04 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					72 pF
IXFQ30N60X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.155 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					14 pF
IXFP22N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.39 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				3.4 pF
IXFQ26N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.25 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					8 pF
IXTT69N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ	69 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.049 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFQ22N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.39 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					3.4 pF
IXFK105N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	70 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ	105 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.007 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK90N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A		90 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON		TIN SILVER COPPER	.023 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFT30N60X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	500 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.155 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				14 pF
IXFN44N50Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	176 A	2500 mJ	44 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	120 ohm	44 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.