57 W Power Field Effect Transistors (FET) 107

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFR5505TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
FDD6637	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0116 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSC520N15NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.052 ohm	21 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
IPD30N10S3L34ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	138 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0418 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260		AEC-Q101
FDD6637_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0116 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDD6637-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0116 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
SISS23DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	26 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	40 ns	-50 Cel	380 ns		.0045 ohm	50 A	DUAL	S-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	900 pF
BSC520N15NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.052 ohm	21 A	DUAL	R-PDSO-N8		DRAIN
SISS27ADN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	31 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	-55 Cel	102 ns		.0051 ohm	50 A	DUAL	S-PDSO-N5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	440 pF
TPH6400ENH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	SQUARE	ENHANCEMENT MODE	1	42 A	56 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.064 ohm	13 A	DUAL	S-PDSO-F5		DRAIN							50 pF
TPH6400ENH,L1Q(M	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	SQUARE	ENHANCEMENT MODE	1	42 A	56 mJ	13 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.064 ohm	13 A	DUAL	S-PDSO-F5		DRAIN							50 pF
AUIRFR5505TRL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3
SISS10DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	150 A	45 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	58 ns	-55 Cel	70 ns		.00265 ohm	60 A	DUAL	S-PDSO-N5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	72 pF
JANSR2N7624U3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	282 ns	-55 Cel	202 ns		.072 ohm	14.9 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						MIL-19500; RH - 100K Rad(Si)
AUIRFR5505	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3	30	260
IPD30N10S3L-34	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	138 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0418 ohm	30 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AB	e3		260
BSC050N04LSG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	340 A	35 mJ	85 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0072 ohm	18 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
PSMN7R0-30MLC,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	57 W						ENHANCEMENT MODE	1			67 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		67 A			1					e3	30	260
FDMC007N08LCDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	339 A	150 mJ	64 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	31 ns	-55 Cel	68 ns	Matte Tin (Sn) - annealed	.0068 ohm	64 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	40 pF
TPH3300CNH,L1Q(M	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	SQUARE	ENHANCEMENT MODE	1	61 A	53 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.033 ohm	18 A	DUAL	S-PDSO-F8		DRAIN							50 pF
IRFR5505TRRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRFU5505PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	57 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-251AA	e3	30	260
SIR186DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.25 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	64 ns	-55 Cel	46 ns		.0045 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	29 pF
TK25S06N1L,LXHQ	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	22 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0368 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN							69 pF	AEC-Q101
IRFR5505GTRPBF	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
IRHLNJ793034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
IRHLNJ797034A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	282 ns	-55 Cel	202 ns		.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 100K Rad(Si)
IRHLNJ797034SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	282 ns	-55 Cel	202 ns		.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN								MIL-19500
IRHLNJ797034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	282 ns	-55 Cel	202 ns	TIN LEAD	.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRHLNJ797034B	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	282 ns	-55 Cel	202 ns		.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
BSB017N03LX3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	225 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel			.0017 ohm	147 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified					260
BSC072N03LDG	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0094 ohm	11.5 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
IRFR5505PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRLR3105TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.037 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
TPH1110FNH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	SQUARE	ENHANCEMENT MODE	1	32 A	58 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.112 ohm	10 A	DUAL	S-PDSO-F5		DRAIN							50 pF
SIRA60DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	80 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	70 ns	-55 Cel	100 ns	MATTE TIN	.00094 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	191 pF
NDD02N60ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	120 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.8 ohm	2.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NDD02N60Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	57 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	120 mJ	2.2 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.8 ohm	2.2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
FDMC007N08LC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	330 A	150 mJ	66 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	30 ns	-55 Cel	49 ns	Matte Tin (Sn) - annealed	.007 ohm	66 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	30 pF
FDMC008N08C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	273 A	150 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	42 ns	Matte Tin (Sn) - annealed	.0078 ohm	60 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	30 pF
STL18N65M2	STMicroelectronics	N-CHANNEL	SINGLE	YES	57 W							1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A									NOT SPECIFIED	NOT SPECIFIED
PSMN7R0-100XS,127	NXP Semiconductors	N-CHANNEL	SINGLE	NO	57 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							55 A
BSZ520N15NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	84 A	60 mJ	21 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.052 ohm	21 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3		260
BSB280N15NZ3GXUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	METAL	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	120 mJ	30 A	3	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				SILVER NICKEL	.028 ohm	9 A	BOTTOM	R-MBCC-N3	3	DRAIN				e4
IRHLNJ73034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	63 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	171 ns	-55 Cel	84 ns	TIN LEAD	.039 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
2N7606U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	63 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.035 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
2N7624U3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
BSC883N03MSG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	34 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	392 A	40 mJ	98 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0046 ohm	19 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified					260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.