YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
PJA3441-AU_R1_000A1	Panjit International	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.088 ohm	3.1 A	DUAL	R-PDSO-G3						e3	40	260		AEC-Q101
SI7119DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIA400EDJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	11.25 mJ	12 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.019 ohm	12 A	DUAL	S-PDSO-N6		DRAIN	Not Qualified					260
SIHB33N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	278 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	793 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.099 ohm	33 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED
SIR184DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	20 mJ	73 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	34 ns	-55 Cel	52 ns		.007 ohm	73 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	22 pF
SQJA90EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	57 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0076 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN								AEC-Q101
SQM50P08-25L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.025 ohm	50 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
STD20NF06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	300 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.04 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
SUD19P06-60L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	24.2 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SUM65N20-30	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	375 W						ENHANCEMENT MODE	1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Tin/Lead (Sn/Pb)		65 A								e0
AUIRF6218STRL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.15 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB					AEC-Q101
BSC010N04LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	330 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0013 ohm	38 A	DUAL	R-PDSO-F8	1	DRAIN				e3
BSP89L6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
BSP89L6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN								AEC-Q101
BSZ440N10NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	29 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	72 A	17 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.044 ohm	5.3 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3		260
BTS244ZE3062AATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	1650 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	130 ns	-40 Cel	100 ns	TIN	.018 ohm	35 A	SINGLE	R-PSSO-G4		DRAIN		AVALANCHE RATED	TO-263	e3			400 pF	AEC-Q101
BUK766R0-60E,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	182 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		75 A			1					e3	30	245
BUK7Y9R9-80EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	195 W						ENHANCEMENT MODE	1			89 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							89 A
BUK9Y25-60E,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		34 A			1					e3	30	260
CPC3703CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.6 A		.36 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON				MATTE TIN	4 ohm	.36 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
CSD18501Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	142 A	231 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0043 ohm	22 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	23 pF
FCD380N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	106 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30.6 A	211.6 mJ	10.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.38 ohm	10.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDB12N50TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	165 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	456 mJ	11.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.65 ohm	11.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
FDC637AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	62 ns	MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	145 pF
FDD6N50TM_WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR		1	24 A	270 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA		30	260
FDMC510P-F106	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	82 ns	-55 Cel	812 ns	NICKEL PALLADIUM GOLD	.008 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260	1110 pF
FDMC8321L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	86 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0025 ohm	22 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDMC86570LET60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	436 A	253 mJ	87 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	46 ns	-55 Cel	71 ns	Matte Tin (Sn) - annealed	.0043 ohm	87 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDS3992_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		167 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
FQD4P40TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	260 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.1 ohm	2.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IGT60R190D1SATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	55.5 W	PLASTIC/EPOXY	SWITCHING	600 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	23 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE		-55 Cel			.19 ohm	12.5 A	SINGLE	R-PSSO-F3	1	DRAIN							.15 pF
IPB80N06S407ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0071 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPC50N04S55R8ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.0072 ohm	50 A	DUAL	R-PDSO-F8	1	DRAIN				e3				AEC-Q101
IPD90N06S405ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	135 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.0051 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3				AEC-Q101
IPN60R1K0PFD7SATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	10 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		TIN	1 ohm	4.7 A	DUAL	R-PDSO-G3	1	DRAIN				e3
IRF530NSTRR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	93 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.09 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0
IXFT94N30P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1040 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	235 A	2500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.036 ohm	94 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	25 pF
IXTA4N150HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	280 W	PLASTIC/EPOXY	SWITCHING	1500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	350 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	6 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	35 pF
IXTY1R6N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	10 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	11 pF
JANSR2N7433U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	172 A	500 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	250 ns	-55 Cel	330 ns	TIN LEAD	.077 ohm	43 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0			360 pF	MIL-19500
NTBG040N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	578 mJ	60 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	66 ns	-55 Cel	66 ns	Matte Tin (Sn) - annealed	.056 ohm	60 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263CB	e3	30	245	12.5 pF
NTF5P03T3G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.56 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	250 mJ	3.7 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-261AA	e3	30	260
SPD06N80C3BTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.9 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3	40	260
SQD90P04-9M4L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0094 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
SQJ211ELP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	88 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	35 ns	-55 Cel	80 ns		.03 ohm	33.6 A	SINGLE	R-PSSO-G4		DRAIN							80 pF	AEC-Q101
SQJ960EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	12 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.04 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260
STB12NM50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel		Matte Tin (Sn) - annealed	.35 ohm	12 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	245
STB270N04	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	330 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	640 A	1000 mJ	160 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0025 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.