YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
RFD16N06LESM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.047 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
SI7922DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.6 W	UNSPECIFIED	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	2	10 A	1.25 mJ	1.8 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.195 ohm	1.8 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
ZXMP6A17GTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.7 A		4.1 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.125 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BF998R-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, DEPLETION MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.03 A			1							260
BSC160N10NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	168 A	50 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.016 ohm	8.8 A	DUAL	R-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED
BSP250,135	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.65 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	80 ns		140 ns	TIN	.4 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BUK98150-55A,135	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	22 mJ	5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.161 ohm	5.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDMC2610	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		200 V	FLAT	SQUARE	ENHANCEMENT MODE	1	15 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.397 ohm	2.2 A	DUAL	S-PDSO-F8	1		Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMS86105	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	50 mJ	56 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.034 ohm	6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDMS86520L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	91 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0082 ohm	13.5 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDS6375_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	39 ns	-55 Cel	289 ns	MATTE TIN	.024 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3			229 pF
IPB120N04S402ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	480 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0018 ohm	120 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3
IRF8301MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	260 mJ	192 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0015 ohm	34 A	BOTTOM	R-XBCC-N3	1	DRAIN		ULTRA LOW RESISTANCE
IRFR9024TRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
IRLL014PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	100 mJ	2.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.2 ohm	2.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e3	30	260
LMG3425R050RQZT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			44 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.055 ohm		QUAD	S-PQCC-N54	3					e4	30	260
MTD3055VL1	Motorola	N-CHANNEL	SINGLE	YES	48 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Tin/Lead (Sn/Pb)		12 A								e0
PSMN2R4-30YLDX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	106 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							100 A
SIR470DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	125 mJ	60 A	8	SMALL OUTLINE		METAL SEMICONDUCTOR	104 W	150 Cel	SILICON	135 ns	-55 Cel	225 ns	MATTE TIN	.00265 ohm	60 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
SQJ459EP-T2_BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	177 ns		.018 ohm	52 A	SINGLE	R-PSSO-G4		DRAIN							312 pF
STB31N65M5	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W							1			22 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							22 A									NOT SPECIFIED	NOT SPECIFIED
STD2N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	950 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	50 mJ	2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			5 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
STL60P4LLF6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	240 A		60 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.019 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
TPHR9003NL,L1Q(M	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	889 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0014 ohm	60 A	DUAL	S-PDSO-F5		DRAIN
ZXMP7A17GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	70 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A		3.7 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.16 ohm	3.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOW THRESHOLD; FAST SWITCHING	TO-261AA	e3	30	260
CSD18503Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	124 A	157 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0062 ohm	19 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	16 pF
DMT6007LFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	15 A	DUAL	S-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3	30	260	38.5 pF	AEC-Q101; MIL-STD-202
FDB20N50F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1110 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.26 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245
FDD24AN06LA0_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		32 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.019 ohm	7.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDD24AN06LA0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		32 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.019 ohm	7.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDWS86368_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	80 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	60 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.0045 ohm	80 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	20 pF	AEC-Q101
FDWS86368-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	80 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	60 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.0045 ohm	80 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	20 pF	AEC-Q101
FQB9P25TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.6 A	650 mJ	9.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.62 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQT5P10	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	55 mJ	1 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	180 ns	-55 Cel	105 ns		1.05 ohm	1 A	DUAL	R-PDSO-G4		DRAIN							25 pF
IPD50N06S4L08ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	87 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0078 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260		AEC-Q101
IPD70R360P7SAUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	59.5 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		TIN	.36 ohm	12.5 A	SINGLE	R-PSSO-G2	3	DRAIN			TO-252	e3
IPG20N06S2L65AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.065 ohm	20 A	DUAL	R-PDSO-F8	1					e3			50 pF	AEC-Q101
IRF520NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A	91 mJ	9.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.2 ohm	9.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IRF7341PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A	72 mJ	4.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.05 ohm	4.7 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
IRF7455TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	200 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0075 ohm	15 A	DUAL	R-PDSO-G8	1				MS-012AA
NVMFS6H800NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	601 mJ	224 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0024 ohm	224 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
PJA3441_R1_00001	Panjit International	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.088 ohm	3.1 A	DUAL	R-PDSO-G3						e3	40	260
PSMN011-80YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	117 W						ENHANCEMENT MODE	1			67 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		67 A			1					e3	30	260
PSMN4R1-60YLX	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	593 A	199 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0048 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN		AVALANCHE RATED	MO-235	e3	30	260		IEC-60134
QH8MA2TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0056 ohm	4.5 A	DUAL	R-PDSO-F8						e3
SI7119DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified				30	260
SI7898DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	25 A		3 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7998DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	60 A		30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0093 ohm	15 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.