YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQ2362ES-T1_BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	7 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	40 ns	-55 Cel	51 ns		.068 ohm	4.3 A	DUAL	R-PDSO-G3					TO-236AB				26 pF	AEC-Q101
SQJ912BEP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	100 A	33.8 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	30 ns	-55 Cel	60 ns		.011 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN							110 pF	AEC-Q101
STB34N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	510 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.11 ohm	28 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	245
STS5DNF60L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.055 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3	30	260
AUIRFR8401TRL	Infineon Technologies	N-CHANNEL	SINGLE	YES	79 W							1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		100 A			1
BSC012N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	1224 A	911 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0012 ohm	36 A	DUAL	R-PDSO-N8	1	DRAIN				e3			120 pF
BSC014N04LSATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	170 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0019 ohm	32 A	DUAL	R-PDSO-F8	1	DRAIN		ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE		e3
BSZ067N06LS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	118 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0121 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
BSZ075N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	104 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0075 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3
BUK9880-55A/CUX	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	36 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.089 ohm	7 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260		AEC-Q101; IEC-60134
CSD19535KTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	451 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0041 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	38 pF
FDB3652-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		182 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.016 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDB3652_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		182 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.016 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
FDMC86102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	72 mJ	29 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM	.024 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e4	30	260
IRF540NSTRRHR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	185 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.044 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE		e0
IRF7240TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.015 ohm	10.5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA	e0
IRF9383MTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0029 ohm	22 A	BOTTOM	R-XBCC-N3	1	DRAIN				e3	40	260
IRFR024PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	91 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.1 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA		30	260
NTMFD5C446NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	644 A	171 mJ	145 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0039 ohm	25 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	48 pF
SQS420EN-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	1	32 A	5 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.028 ohm	8 A	DUAL	S-XDSO-C5		DRAIN	Not Qualified				40	240
STD5N20LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
AUIRFR9024NTR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	62 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.175 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3
BSC100N10NSFGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	360 A	377 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.01 ohm	11.4 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
BSP316PL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.72 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				Matte Tin (Sn)	1.8 ohm	.68 A	DUAL	R-PDSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE		e3	40	260
BUK6D43-60EX	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	52 A	24 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.043 ohm	13 A	DUAL	S-PDSO-N6	1	DRAIN				e3	30	260		AEC-Q101; IEC-60134
BUK7Y7R8-80EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	238 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							100 A
FDMC8462	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	216 mJ	64 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium (Ni/Pd)	.0058 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
IRF640NSTRLHR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	247 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.15 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB		NOT SPECIFIED	NOT SPECIFIED
IRF8302MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	260 mJ	31 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.0018 ohm	31 A	BOTTOM	R-XBCC-N3	1	DRAIN				e1	30	260
IRF9333TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	100 mJ	9.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0194 ohm	9.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA
IRFR120ZTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	18 mJ	8.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.19 ohm	8.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRFR9220TRPBF-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	310 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			1.5 ohm	3.6 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				33 pF
NTD2955T4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.18 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NVMFD5C462NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	311 A	174 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0077 ohm		DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
NVTFS5C673NLWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	290 A	88 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.015 ohm	13 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
PSMN3R3-40YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	117 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		100 A			1					e3	30	260
SI7115DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	150 V	C BEND	SQUARE	ENHANCEMENT MODE	1	15 A	11.25 mJ	8.9 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.295 ohm	2.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SPD02N80C3BT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			2.7 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
SPD08P06PGBTMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.2 A	70 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.3 ohm	8.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252	e3
STB140NF55T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1.3 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.008 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STN2NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	300 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.26 ohm	2 A	DUAL	R-PDSO-G4	1		Not Qualified			e3	30	260
SUM110P04-04L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	281 mJ	110 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0042 ohm	110 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	260
BSC076N06NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	47 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0076 ohm	14 A	DUAL	R-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED
BSP296NH6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.6 A	15 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	1.2 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3				AEC-Q101
BUK9Y30-75B,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	78 mJ	34 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	34 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	MO-235	e3	30	260
CSD17312Q5	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	845 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0024 ohm	38 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	120 pF
CSD18511Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	157 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0035 ohm	27 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	309 pF
FDFS2P106A_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.11 ohm	3 A	DUAL	R-PDSO-G8			Not Qualified			e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.