Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRFR9015-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80.2 ns	79 ns		.7 ohm	4.5 A	SINGLE	R-PSSO-G2		Not Qualified
IRLU111	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	45 ns	45 ns		.75 ohm	4 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9212	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	150 mJ	1.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	30 ns	37 ns	TIN LEAD	4.5 ohm	1.6 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRLS530	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.2 ohm	8.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS433	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				2 ohm	2.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFU120A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	141 mJ	8.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	8.4 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9520	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP121	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						8 A
IRFS641	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	9.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRL630A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	54 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	9 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU210	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	31 mJ	2.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	42 ns	56 ns		1.5 ohm	2.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRF820A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	208 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS9533	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	10 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLM014A	Samsung	N-CHANNEL	SINGLE	YES	2.1 W						ENHANCEMENT MODE	1			2.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						2.8 A
IRLR230A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	37 mJ	7.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	7.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS531	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.16 ohm	9.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU9121	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFP232	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	170 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	80 ns	90 ns		.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified
IRFSZ44	Samsung	N-CHANNEL	SINGLE	NO	48 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	48 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	65 W	150 Cel	SILICON	242 ns	205 ns		.028 ohm	28 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF9631	Samsung	P-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	260 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	150 ns	180 ns		.8 ohm	6.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLI610A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	29 mJ	3.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.3 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS340A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	549 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.55 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS541	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.077 ohm	17 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS250A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	85 A	605 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.085 ohm	21.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFSZ34A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	34 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	343 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.04 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFU421	Samsung	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY		450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9241	Samsung	P-CHANNEL	SINGLE	NO	86 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	7.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFR420A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	206 mJ	2.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.3 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRF441	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		8 A							e0
IRLU220A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	28 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	4.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFZ44A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	126 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	857 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	126 W	175 Cel	SILICON	80 ns	280 ns		.024 ohm	50 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB		255 pF
IRFU022	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.12 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRFU9120	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	5.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRF9Z10	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	1 mJ	4.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	6.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRF9510	Samsung	P-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	167 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns		1.2 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFR020	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS330	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1 ohm	3.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS640A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	256 mJ	9.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	9.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFP222	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						4 A
IRFR9120-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9211	Samsung	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR012	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	1.4 mJ	6.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns	TIN LEAD	.3 ohm	6.7 A	SINGLE	R-PSSO-G2		Not Qualified			e0
IRLS621	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.2 ohm	3.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS353	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		350 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	9 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS9621	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.5 ohm	3.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS840	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	161 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	56 ns	104 ns		.85 ohm	4.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLSZ24	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.15 ohm	10.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFP241	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	90 ns	140 ns		.18 ohm	18 A	SINGLE	R-PSFM-T3		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.