Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRF9512	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	167 mJ	2.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns	TIN LEAD	1.6 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFR320	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	16 mJ	3.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns		1.8 ohm	3.1 A	SINGLE	R-PSSO-G2		Not Qualified
IRFZ24	Samsung	N-CHANNEL	SINGLE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	175 Cel	SILICON	120 ns	70 ns		.1 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLS620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	26 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	33 mJ	4.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE
IRLR220A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	28 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	4.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS540A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	385 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.052 ohm	17 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFI610A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	44 mJ	3.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.3 A	SINGLE	R-PSIP-T3		Not Qualified
IRF630A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	72 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	162 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	9 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLIZ14A	Samsung	N-CHANNEL	SINGLE	NO	31 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						10 A
IRFR010	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A	1.4 mJ	8.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns		.2 ohm	8.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP9230	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	260 mJ	.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	150 ns	180 ns		.8 ohm	6.5 A	SINGLE	R-PSFM-T3		Not Qualified
IRFP330	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	290 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	46 ns	80 ns		1 ohm	5.5 A	SINGLE	R-PSFM-T3		Not Qualified
IRFR012-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	1.4 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns		.3 ohm	6.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR421	Samsung	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.5 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP9130	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	550 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	200 ns	280 ns		.3 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified
IRFS610A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	22 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	42 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRL621	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	160 ns		1.2 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLU020	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFS242	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	11 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRL630	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	80 ns	90 ns		.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU330A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	347 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	4.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRLS630A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	56 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	6.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE
IRLIZ34A	Samsung	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						30 A
IRFP331	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	290 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	46 ns	80 ns		1 ohm	5.5 A	SINGLE	R-PSFM-T3		Not Qualified
IRLR211	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	40 ns	30 ns		2.4 ohm	2 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFP9232	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	260 mJ	5.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	150 ns	180 ns		1.2 ohm	5.5 A	SINGLE	R-PSFM-T3		Not Qualified
IRFR224	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	3.8 A	SINGLE	R-PSSO-G2		Not Qualified
IRF223	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		3.5 A							e0
IRFS152	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.08 ohm	23.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS542	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.1 ohm	25 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFR020-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	96 ns	63 ns		.1 ohm	15 A	SINGLE	R-PSSO-G2		Not Qualified
IRF730A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	346 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	5.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFU024A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	154 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.07 ohm	15 A	SINGLE	R-PSIP-T3		Not Qualified
IRFP254A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	221 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	781 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.14 ohm	25 A	SINGLE	R-PSFM-T3		Not Qualified
IRFP122	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						7 A
IRL540	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A		28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	140 ns	135 ns		.11 ohm	24 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS432	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				2 ohm	2.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFR221	Samsung	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.6 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS722	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS625	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13 A	83 mJ	2.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	53 ns	52 ns		1.5 ohm	2.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU010	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	1.4 mJ	8.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns		.2 ohm	8.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFP421	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						2.5 A
IRFU9210	Samsung	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	150 mJ	1.9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	30 ns	37 ns		3 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
SSR1N60	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns	90 ns		12 ohm	1 A	SINGLE	R-PSSO-G2		Not Qualified				20 pF
IRLSZ34	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.07 ohm	16 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFR310A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	26 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	116 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	1.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRLU120	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRF9Z14	Samsung	P-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	1 mJ	6.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	6.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.