Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code
IRFS822	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	2.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF9541	Samsung	P-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	560 mJ	19 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	45 ns	32 ns		.2 ohm	19 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFP254	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	92 A	800 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	159 ns	208 ns		.14 ohm	23 A	SINGLE	R-PSFM-T3		Not Qualified
IRFS730	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	117 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	46 ns	80 ns		1 ohm	3.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS632	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF131	Samsung	N-CHANNEL	SINGLE	NO	79 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		14 A							e0
IRFU224A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	90 mJ	3.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	3.8 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR130A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	225 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.11 ohm	13 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFI630A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	162 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS630	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	5.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS644A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	390 mJ	7.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	7.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRF9531	Samsung	P-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	550 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	200 ns	280 ns		.3 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS9530	Samsung	P-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFIZ30	Samsung	N-CHANNEL	SINGLE	NO	88 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.05 ohm	30 A	SINGLE	R-PSIP-T3		Not Qualified
IRFZ14A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	86 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFSZ22	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.12 ohm	14 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF343	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			8.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		8.3 A							e0
IRFS520A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	29 A	104 mJ	7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.2 ohm	7.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRF645	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	550 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	120 ns	154 ns		.34 ohm	13 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFI840A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	640 mJ	8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.85 ohm	8 A	SINGLE	R-PSIP-T3		Not Qualified
SSM3N70	Samsung	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						3 A
IRFS9131	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.3 ohm	8.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRF9Z15	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	1 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns	TIN LEAD	.7 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFU211	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	2.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU9025	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	440 mJ	9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.33 ohm	9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS510A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	21 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	54 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.4 ohm	4.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS130	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.16 ohm	9.7 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRLR220	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	115 ns		1.2 ohm	4 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRLS510A	Samsung	N-CHANNEL	SINGLE	NO	23 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						4.5 A
IRLU224	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				1.3 ohm	3.3 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRLR111	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	45 ns	45 ns		.75 ohm	4 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFIZ34A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	77 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	463 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.04 ohm	30 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR310	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.5 A	60 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	27 ns	49 ns		3.6 ohm	1.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS9522	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF9612	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	110 mJ	.9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	40 ns	30 ns	TIN LEAD	4.5 ohm	1.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRF243	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		16 A							e0
IRLI510A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	62 mJ	5.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.44 ohm	5.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS733	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	117 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	46 ns	80 ns		1.5 ohm	3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP223	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						4 A
IRF421	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.5 A							e0
IRFS9630	Samsung	P-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS543	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.1 ohm	25 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU322	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	16 mJ	2.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns	TIN LEAD	2.5 ohm	2.3 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRFS9542	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	8.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns	32 ns		.3 ohm	8.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLS641	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	47 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	67 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFR025-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	96 ns	63 ns		.12 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP350A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	495 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.3 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.