Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRFI624A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	84 mJ	4.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	4.1 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS843	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	161 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	56 ns	104 ns		1.1 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS721	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	2.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP321	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						3 A
IRFU320	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	16 mJ	3.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns		1.8 ohm	3.1 A	SINGLE	R-PSIP-T3		Not Qualified
IRLS531	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.2 ohm	8.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFP120	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						8 A
IRFR024ATF	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	154 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.07 ohm	15 A	SINGLE	R-PSSO-G2	DRAIN
IRLS611	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				2.4 ohm	2.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU210A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	26 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	44 mJ	2.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	2.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRFI730A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	346 mJ	5.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	5.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRF9Z30	Samsung	P-CHANNEL	SINGLE	NO	74 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	13 mJ	18 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	74 W	150 Cel	SILICON	188 ns	128 ns		.14 ohm	18 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLU211	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	40 ns	30 ns		2.4 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFS522	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.36 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP443	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	510 mJ	7.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	56 ns	104 ns		1.1 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified
IRFS141	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			19.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.077 ohm	19.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFU230A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	150 mJ	7.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	7.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	78 mJ	4.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRF242	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		16 A							e0
IRLS521	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	5.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS452	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.5 ohm	8.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS820	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF513	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	19 mJ	4.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	43 W	150 Cel	SILICON	47 ns	42 ns	TIN LEAD	.74 ohm	4.9 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFR014-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A	1.4 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns		.2 ohm	8.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFZ14	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	2.2 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	175 Cel	SILICON	90 ns	49 ns		.2 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFI614A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	49 mJ	2.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.8 A	SINGLE	R-PSIP-T3		Not Qualified
IRFSZ44A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	771 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	175 Cel	SILICON	80 ns	280 ns		.024 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified				255 pF
IRFS521	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.27 ohm	7.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLR024	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFR9010	Samsung	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	240 mJ	5.3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	5.3 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP244A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	480 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	16 A	SINGLE	R-PSFM-T3		Not Qualified
IRFR9010-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80.2 ns	79 ns		.5 ohm	5.3 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS9140	Samsung	P-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			13.2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	13.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS133	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.23 ohm	8.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRF341	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		10 A							e0
IRF632	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	170 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	80 ns	90 ns	TIN LEAD	.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRLS640	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFR311	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		350 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	1.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS532	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.23 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS710A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	117 mJ	1.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	1.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS9133	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	6.9 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRLS520	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	5.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLI530A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	49 A	261 mJ	14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.12 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU9024	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	8.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRF432	Samsung	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		4 A							e0
IRFS443	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.1 ohm	4.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFU034A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	92 A	453 mJ	23 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.04 ohm	23 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS634A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	23 A	210 mJ	5.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	5.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.