Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRF9Z14	Samsung	P-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	1 mJ	6.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	6.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFU220	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	50 mJ	4.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	54 ns	43 ns		.8 ohm	4.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRLR224	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				1.3 ohm	3.3 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9022	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	440 mJ	9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.33 ohm	9 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRF9623	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	270 mJ	1.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	90 ns	90 ns	TIN LEAD	2.4 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFS9230	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	4.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS240	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	12.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFU310	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3.5 A	60 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	27 ns	49 ns		3.6 ohm	1.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS453	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.5 ohm	8.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS743	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	157 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	62 ns	111 ns		.8 ohm	4.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFIZ14A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.8 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	86 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	10 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS614A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	22 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	55 mJ	2.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRLR110	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	45 ns	45 ns		.75 ohm	4 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFP123	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						7 A
IRFS831	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	124 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	40 ns	76 ns		1.5 ohm	3.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFR9121	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP243	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	580 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	90 ns	140 ns	TIN LEAD	.22 ohm	16 A	SINGLE	R-PSFM-T3		Not Qualified			e0
IRF423	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.2 A							e0
IRLR121	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRLR034A	Samsung	N-CHANNEL	SINGLE	YES	42 W						ENHANCEMENT MODE	1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						23 A
IRFS233	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	5.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRF9Z20	Samsung	P-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	4.2 mJ	9.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	98 ns	56 ns		.28 ohm	9.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS143	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.1 ohm	17.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFU025	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.12 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified
IRFP220	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						5 A
IRLS631	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	5.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS440A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	641 mJ	6.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	85 W	150 Cel	SILICON	100 ns	245 ns		.85 ohm	6.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified				75 pF
IRFS332	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.5 ohm	3.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS742	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	157 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	62 ns	111 ns		.8 ohm	4.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRL520	Samsung	N-CHANNEL	SINGLE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		9.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFR9221	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.6 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR210A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	26 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	44 mJ	2.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	2.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFI710A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	114 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
IRF610A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	44 mJ	3.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS635	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	90 mJ	4.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	49 ns	76 ns		.68 ohm	4.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFI510A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.8 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	63 mJ	5.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.4 ohm	5.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS350	Samsung	N-CHANNEL	SINGLE	NO	96 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			10.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	10.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFP255	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	800 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	159 ns	208 ns	TIN LEAD	.17 ohm	21 A	SINGLE	R-PSFM-T3		Not Qualified			e0
IRFU220A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	71 mJ	4.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR9020-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	98 ns	56 ns		.29 ohm	9.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS9623	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				2.4 ohm	3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS440	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.85 ohm	5.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS352	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	9 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFI820A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	208 mJ	2.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS832	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	124 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	40 ns	76 ns		2 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS650A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	63 A	666 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.085 ohm	15.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS620	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFSZ24A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	168 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.07 ohm	14 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.