Samsung Power Field Effect Transistors (FET) 1,134

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFU212

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.4 A

31 mJ

2.1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

42 ns

56 ns

TIN LEAD

2.4 ohm

2.1 A

SINGLE

R-PSIP-T3

Not Qualified

e0

IRF133

Samsung

N-CHANNEL

SINGLE

NO

79 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

155 Cel

Tin/Lead (Sn/Pb)

12 A

e0

IRFU020

Samsung

N-CHANNEL

SINGLE

NO

42 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

9.5 mJ

15 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 W

150 Cel

SILICON

.1 ohm

15 A

SINGLE

R-PSIP-T3

Not Qualified

IRFS621

Samsung

N-CHANNEL

SINGLE

NO

30 W

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

4.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFS9232

Samsung

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

3.8 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

IRFP440

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

56 ns

104 ns

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

IRF442

Samsung

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IRFS253

Samsung

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

17.3 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

IRFS530

Samsung

N-CHANNEL

SINGLE

NO

35 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.16 ohm

9.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFR9210

Samsung

P-CHANNEL

SINGLE

YES

25 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

150 mJ

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

30 ns

37 ns

3 ohm

2 A

SINGLE

R-PSSO-G2

Not Qualified

IRFZ10

Samsung

N-CHANNEL

SINGLE

NO

20 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

2.2 mJ

7.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 W

175 Cel

SILICON

90 ns

49 ns

.2 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRLS620

Samsung

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

3.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFS9523

Samsung

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRF654A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

551 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRFR220A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

71 mJ

4.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

4.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFS430

Samsung

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

3.1 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

IRF9622

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

270 mJ

1.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

90 ns

90 ns

TIN LEAD

2.4 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRF712

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.3 A

120 mJ

1.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

36 W

150 Cel

SILICON

27 ns

49 ns

TIN LEAD

5 ohm

1.7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRFZ12

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

2.2 mJ

5.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 W

175 Cel

SILICON

90 ns

49 ns

TIN LEAD

.3 ohm

8.3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRF9Z12

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

1 mJ

4 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

20 W

150 Cel

SILICON

80 ns

79 ns

TIN LEAD

.7 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRLR014A

Samsung

N-CHANNEL

SINGLE

YES

18 W

ENHANCEMENT MODE

1

8.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.2 A

IRFS230

Samsung

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

6.2 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

IRFS644

Samsung

N-CHANNEL

SINGLE

NO

40 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

177 mJ

8.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

120 ns

154 ns

.28 ohm

7.9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFP231

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

170 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

IRFI720A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.1 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13 A

249 mJ

3.3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.8 ohm

3.3 A

SINGLE

R-PSIP-T3

Not Qualified

IRFS140A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

72 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

529 mJ

23 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.052 ohm

23 A

SINGLE

R-PSIP-T3

Not Qualified

IRFS645

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

177 mJ

7.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

120 ns

154 ns

.34 ohm

7.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFU110A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

19 A

59 mJ

4.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

4.7 A

SINGLE

R-PSIP-T3

Not Qualified

IRFS140

Samsung

N-CHANNEL

SINGLE

NO

83 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

19.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.077 ohm

19.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRLR020

Samsung

N-CHANNEL

SINGLE

YES

42 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 W

150 Cel

SILICON

120 ns

70 ns

.15 ohm

14 A

SINGLE

R-PSSO-G2

Not Qualified

LOGIC LEVEL COMPATIBLE

IRF612

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

43 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.5 A

46 mJ

2.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

43 W

150 Cel

SILICON

38 ns

34 ns

TIN LEAD

2.4 ohm

2.6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRLI630A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

69 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

54 mJ

9 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

9 A

SINGLE

R-PSIP-T3

Not Qualified

IRFIZ10

Samsung

N-CHANNEL

SINGLE

NO

43 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

IRFS9622

Samsung

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

2.4 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFS823

Samsung

N-CHANNEL

SINGLE

NO

30 W

PLASTIC/EPOXY

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

2.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRF331

Samsung

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.5 A

e0

IRFR9212-T1

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.4 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

30 ns

37 ns

4.5 ohm

1.6 A

SINGLE

R-PSSO-G2

Not Qualified

IRFSZ20

Samsung

N-CHANNEL

SINGLE

NO

36 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRFS624A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

72 mJ

3.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

3.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRFS630A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

141 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRLIZ24A

Samsung

N-CHANNEL

SINGLE

NO

45 W

ENHANCEMENT MODE

1

17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

17 A

IRF132

Samsung

N-CHANNEL

SINGLE

NO

79 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

155 Cel

Tin/Lead (Sn/Pb)

12 A

e0

IRFR014A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

18 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33 A

58 mJ

8.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

8.2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRLSZ10

Samsung

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFR321

Samsung

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

350 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.8 ohm

3.1 A

SINGLE

R-PSSO-G2

Not Qualified

IRLU110

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

4.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

45 ns

45 ns

.75 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

IRFP9233

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

260 mJ

5.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFS151

Samsung

N-CHANNEL

SINGLE

NO

96 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

27.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.