Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	Maximum Feedback Capacitance (Crss)
SSP10N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	442 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	9 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSH4N80	Samsung	N-CHANNEL	SINGLE	NO	135 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified
SSP50N05L	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.022 ohm	50 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
SSP4N80	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SFR9024	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	104 mJ	7.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.28 ohm	7.8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSS4N60AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	260 mJ	2.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.5 ohm	2.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFWZ10	Samsung	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.2 ohm	10 A	SINGLE	R-PSSO-G2		Not Qualified
SSF6N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	643 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.3 ohm	4.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH40N20A	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			.065 ohm	40 A	SINGLE	R-PSFM-T3		Not Qualified
SSU2N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	214 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			7 ohm	1.7 A	SINGLE	R-PSIP-T3		Not Qualified
SSH7N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	581 mJ	7.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.2 ohm	7.3 A	SINGLE	R-PSFM-T3		Not Qualified
IRFW644A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	490 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.28 ohm	14 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFWZ44A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	857 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	50 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH17N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	278 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	1103 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.45 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified
IRFM220A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	77 mJ	1.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	1.13 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified		TO-261AA
SSI5N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	529 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.9 ohm	5 A	SINGLE	R-PSIP-T3		Not Qualified
SFW9624	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	182 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.4 ohm	2.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSF7N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	533 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	90 W	150 Cel	SILICON	145 ns	275 ns	1.8 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			66 pF
SFS9Z24	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	96 mJ	7.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.28 ohm	7.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSW5N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY		900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	529 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.9 ohm	5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFR9120	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	96 mJ	4.9 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	4.9 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH10N60	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSH20N50	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	410 ns	840 ns	.3 ohm	20 A	SINGLE	R-PSFM-T3		Not Qualified
SSH10N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	533 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			.95 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SFP9Z14	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	115 mJ	6.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.5 ohm	6.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSI50N06	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.024 ohm	50 A	SINGLE	R-PSIP-T3		Not Qualified
SFW9614	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A	112 mJ	1.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			4 ohm	1.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH12N80	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified
IRFM110A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	60 mJ	1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.4 ohm	1.5 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified		TO-261AA
SFW9644	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	123 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	462 mJ	8.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	8.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSI2N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	212 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			7 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
SSW60N06	Samsung	N-CHANNEL	SINGLE	YES	190 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.018 ohm	60 A	SINGLE	R-PSSO-G2		Not Qualified
IRFW740A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	457 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.55 ohm	10 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSF22N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1281 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.25 ohm	12.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSU3055L	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			.18 ohm	12 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
SSP4N60	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	358 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	190 ns	160 ns	2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	40 pF
SSS15N05	Samsung	N-CHANNEL	SINGLE	NO	37 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.084 ohm	14 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSD2108	Samsung	P-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.1 ohm	4.3 A	DUAL	R-PDSO-G8		Not Qualified
SSU1N55	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns	90 ns	12 ohm	1 A	SINGLE	R-PSIP-T3		Not Qualified			20 pF
SSH4N90	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified
SSW50N05	Samsung	N-CHANNEL	SINGLE	YES	150 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.024 ohm	50 A	SINGLE	R-PSSO-G2		Not Qualified
SSH8N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	847 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	240 W	150 Cel	SILICON	145 ns	345 ns	1.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified			90 pF
SSP4N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	120 W	150 Cel	SILICON	115 ns	175 ns	4 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	30 pF
IRFM224A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7 A	85 mJ	.92 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.1 ohm	.92 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified		TO-261AA
SSW1N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A	113 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			5.5 ohm	1.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFW614A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	49 mJ	2.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2 ohm	2.8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH5N90	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.5 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified
SFU9014	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	24 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	72 mJ	5.3 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.5 ohm	5.3 A	SINGLE	R-PSIP-T3		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.