Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SSH10N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	794 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSI4N80AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	324 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	4.5 A	SINGLE	R-PSIP-T3		Not Qualified
SSP2N90	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFW620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	67 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFS9520	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	85 mJ	4.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.6 ohm	4.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLW44A	Samsung	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						50 A
IRFW830A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	338 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	4.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH22N35	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.25 ohm	22 A	SINGLE	R-PSFM-T3		Not Qualified
SSD2002	Samsung	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.1 ohm	3.5 A	DUAL	R-PDSO-G8		Not Qualified
SSM15N55	Samsung	N-CHANNEL	SINGLE	NO	200 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						15 A
SSF10N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	783 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	6.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSR3055LA	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	18 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	55 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.165 ohm	8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
SSM10N70	Samsung	N-CHANNEL	SINGLE	NO	200 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						10 A
SSR4N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	257 mJ	2.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SF2N06L	Samsung	N-CHANNEL AND P-CHANNEL	SINGLE	NO	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			2 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.11 ohm	2 A	BOTTOM	O-PBCY-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-92
SSS50N05	Samsung	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.024 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSR3055L	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.18 ohm	12 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
SFS9610	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	13 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	91 mJ	1.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSP6N55A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	570 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	320 ns	TIN LEAD	1.2 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0	150 pF
IRFW24A	Samsung	N-CHANNEL	SINGLE	YES	44 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						17 A
SFS9Z14	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	24 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	72 mJ	5.3 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.5 ohm	5.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSF45N20A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	106 A	697 mJ	26 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.065 ohm	26.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSF25N40A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	57 A	1753 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	14.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH22N40	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.25 ohm	22 A	SINGLE	R-PSFM-T3		Not Qualified
SSF17N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	884 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSW3N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	240 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.8 ohm	3 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP7N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	147 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	535 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSS4N55	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SFU9234	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17 A	220 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				1.3 ohm	4.2 A	SINGLE	R-PSIP-T3		Not Qualified
SSH4N80AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	324 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	140 W	150 Cel	SILICON	125 ns	220 ns		3 ohm	4.5 A	SINGLE	R-PSFM-T3		Not Qualified				42 pF
SSH17N55	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified
SSH25N40A	Samsung	N-CHANNEL	SINGLE	NO	278 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			25 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	25 A	SINGLE	R-PSIP-T3		Not Qualified
IRLW540A	Samsung	N-CHANNEL	SINGLE	YES	121 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						28 A
SSD2009	Samsung	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.13 ohm	3 A	DUAL	R-PDSO-G8		Not Qualified
SSS3N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	235 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.8 ohm	2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFWZ44	Samsung	N-CHANNEL	SINGLE	YES	150 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.028 ohm	35 A	SINGLE	R-PSSO-G2		Not Qualified
SSM6N60	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						6 A
SSH6N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	570 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	320 ns	TIN LEAD	1.2 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified			e0	150 pF
SFI9624	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	182 mJ	2.7 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.4 ohm	2.7 A	SINGLE	R-PSIP-T3		Not Qualified
SFP9Z34	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	82 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	555 mJ	18 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	18 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSW2N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	213 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6 ohm	2 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSS7N55	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSP60N05	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.018 ohm	60 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSR2N55	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		550 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSSO-G2		Not Qualified
SSM4N70	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						4 A
SSI1N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	34 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	44 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				12 ohm	1 A	SINGLE	R-PSIP-T3		Not Qualified
SSP2N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	213 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6 ohm	2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSH4N90AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	536 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	140 W	150 Cel	SILICON	120 ns	215 ns		3.7 ohm	4.5 A	SINGLE	R-PSFM-T3		Not Qualified				40 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.