Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SSI50N05	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.024 ohm	50 A	SINGLE	R-PSIP-T3		Not Qualified
SFU9230	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	389 mJ	5.4 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5.4 A	SINGLE	R-PSIP-T3		Not Qualified
SFR2955	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	99 mJ	7.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	7.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH60N10	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	790 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	406 ns	840 ns		.03 ohm	60 A	SINGLE	R-PSFM-T3		Not Qualified
IRFM210A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	40 mJ	.77 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	.77 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified		TO-261AA
IRFWZ20	Samsung	N-CHANNEL	SINGLE	YES	60 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSSO-G2		Not Qualified
SSS50N06L	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.022 ohm	32 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
SSF5N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	508 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.9 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSS3N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	286 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6.2 ohm	2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRLW610A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	29 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.3 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFW540A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	523 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.052 ohm	28 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH7N90	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified
SSH40N20	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.08 ohm	40 A	SINGLE	R-PSFM-T3		Not Qualified
SSP3N70A	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
SSH8N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	444 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	240 W	150 Cel	SILICON	145 ns	330 ns		1.5 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified				95 pF
SSS3N80	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	1.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SFR9234	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	220 mJ	4.2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.3 ohm	4.2 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH20N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	410 ns	840 ns		.25 ohm	20 A	SINGLE	R-PSFM-T3		Not Qualified
SFI9610	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7 A	143 mJ	1.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.75 A	SINGLE	R-PSIP-T3		Not Qualified
SSP4N70	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	430 ns		3.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SFI9510	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	52 mJ	3.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				1.2 ohm	3.6 A	SINGLE	R-PSIP-T3		Not Qualified
SSI6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	582 mJ	6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	6 A	SINGLE	R-PSIP-T3		Not Qualified
IRLW24A	Samsung	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						17 A
IRFW840A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	640 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.85 ohm	8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH40N15A	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.065 ohm	40 A	SINGLE	R-PSFM-T3		Not Qualified
SSH9N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	432 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	240 W	150 Cel	SILICON	145 ns	330 ns		1.3 ohm	9 A	SINGLE	R-PSFM-T3		Not Qualified				95 pF
SSI2N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	213 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
SSH25N40	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	25 A	SINGLE	R-PSFM-T3		Not Qualified
SSP4N55A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	358 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	190 ns	160 ns	TIN LEAD	2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0	40 pF
SSH15N55	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified
IRFWZ40	Samsung	N-CHANNEL	SINGLE	YES	150 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.028 ohm	35 A	SINGLE	R-PSSO-G2		Not Qualified
SFF9244	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	225 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFA1Z0	Samsung	N-CHANNEL	SINGLE	NO	1 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.5 A
SSS60N06	Samsung	N-CHANNEL	SINGLE	NO	52 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			36 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.018 ohm	36 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSP4N90	Samsung	N-CHANNEL	SINGLE	NO	140 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SFU9024	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	31 A	104 mJ	7.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	7.8 A	SINGLE	R-PSIP-T3		Not Qualified
SFW9640	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	123 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	807 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	11 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSD2007	Samsung	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	2 A	DUAL	R-PDSO-G8		Not Qualified
SSI4N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	4 A	SINGLE	R-PSIP-T3		Not Qualified
SSP80N06A	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	3291 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.009 ohm	80 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSS6N60	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	3.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSF7N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	86 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	477 mJ	5.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	5.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFP9610	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7 A	143 mJ	1.8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.75 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSW4N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	424 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH3N90	Samsung	N-CHANNEL	SINGLE	NO	110 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified
SFW9630	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	563 mJ	6.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	6.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFW2955	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A	151 mJ	9.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.3 ohm	9.4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP15N05	Samsung	N-CHANNEL	SINGLE	NO	60 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.084 ohm	16 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.