Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SSP3N70	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSP7N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	523 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	160 W	150 Cel	SILICON	145 ns	275 ns		1.8 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB		66 pF
SSH10N80	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSS7N60	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLW520A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	112 mJ	9.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.22 ohm	9.2 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFU2955	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	99 mJ	7.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	7.6 A	SINGLE	R-PSIP-T3		Not Qualified
SFW9634	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	313 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.3 ohm	5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP4N60AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	262 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSH7N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	778 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	240 W	150 Cel	SILICON	145 ns	345 ns		1.8 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified				90 pF
SSS50N05L	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.022 ohm	32 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
SFP9620	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	327 mJ	3.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSP50N06L	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.022 ohm	50 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
SSH6N70	Samsung	N-CHANNEL	SINGLE	NO	170 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.9 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified
SFI9634	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	313 mJ	5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.3 ohm	5 A	SINGLE	R-PSIP-T3		Not Qualified
SSH5N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	529 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.9 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified
SSS2N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	138 mJ	1.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	1.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSI4N90AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	536 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.7 ohm	4.5 A	SINGLE	R-PSIP-T3		Not Qualified
SSI60N05	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.018 ohm	60 A	SINGLE	R-PSIP-T3		Not Qualified
SFU9130	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	57 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	320 mJ	9.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	9.8 A	SINGLE	R-PSIP-T3		Not Qualified
SSD2104	Samsung	P-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.07 ohm	4.6 A	DUAL	R-PDSO-G8		Not Qualified
SSS3N70	Samsung	N-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	1.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSW50N06	Samsung	N-CHANNEL	SINGLE	YES	150 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.024 ohm	50 A	SINGLE	R-PSSO-G2		Not Qualified
SSH7N55	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified
SFS9620	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	240 mJ	3 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFW710A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	114 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	2 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFW530A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	261 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.11 ohm	14 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRLW14A	Samsung	N-CHANNEL	SINGLE	YES	31 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						10 A
SFS9510	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	16 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	25 mJ	2.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				1.2 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSS1N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	17 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	64 mJ	.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				12 ohm	.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFP9644	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	123 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	462 mJ	8.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	8.6 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSS7N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	611 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSS2N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	214 mJ	1.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				7 ohm	1.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSS4N80	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.5 ohm	2.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SSF9N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	762 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	150 Cel	SILICON	190 ns	435 ns		1.4 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified				125 pF
SSM6N55	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						6 A
SSWI1N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	113 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				5.5 ohm	1.5 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified
SSP7N60	Samsung	N-CHANNEL	SINGLE	NO	140 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSH3N70	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified
SSH9N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	772 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	280 W	150 Cel	SILICON	190 ns	435 ns		1.4 ohm	9 A	SINGLE	R-PSFM-T3		Not Qualified				125 pF
SSH3N70A	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified			e0
SSH11N90	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	11 A	SINGLE	R-PSFM-T3		Not Qualified
SSH45N20	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.065 ohm	45 A	SINGLE	R-PSFM-T3		Not Qualified
SSH4N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	358 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	190 ns	160 ns	TIN LEAD	2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified			e0	40 pF
SSI60N06	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.018 ohm	60 A	SINGLE	R-PSIP-T3		Not Qualified
SSU2N60	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
SSS5N90	Samsung	N-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SFS9Z34	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	247 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLW640A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A	64 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	18 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.