Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SSP3N80	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSS6N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	649 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.3 ohm	3.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFI9644	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	123 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	462 mJ	8.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	8.6 A	SINGLE	R-PSIP-T3		Not Qualified
SSP6N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	667 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.3 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSH10N55	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSU2955	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.3 ohm	12 A	SINGLE	R-PSIP-T3		Not Qualified
SFU9214	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	19 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.1 A	102 mJ	1.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	1.53 A	SINGLE	R-PSIP-T3		Not Qualified
SSW4N90AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	536 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.7 ohm	4.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH10N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	193 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	545 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SFI9Z24	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	161 mJ	9.7 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.28 ohm	9.7 A	SINGLE	R-PSIP-T3		Not Qualified
SFM9214	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.63 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	9 mJ	.45 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	.45 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified	TO-261AA
SFP9614	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A	112 mJ	1.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	1.6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSS6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	560 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFW9620	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	327 mJ	3.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP6N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	480 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSP4N80AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	324 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	130 W	150 Cel	SILICON	125 ns	220 ns		3 ohm	4.5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB		42 pF
SSS4N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	250 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	115 ns	175 ns		4 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			30 pF
IRFWZ14	Samsung	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.2 ohm	10 A	SINGLE	R-PSSO-G2		Not Qualified
IRFWZ34	Samsung	N-CHANNEL	SINGLE	YES	88 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.05 ohm	30 A	SINGLE	R-PSSO-G2		Not Qualified
SSI1N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	113 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				5.5 ohm	1.5 A	SINGLE	R-PSIP-T3		Not Qualified
SSF5N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	341 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.2 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH45N15	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.065 ohm	45 A	SINGLE	R-PSFM-T3		Not Qualified
SSH5N70	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified
SSD2106	Samsung	P-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.25 ohm	2.5 A	DUAL	R-PDSO-G8		Not Qualified
SSH7N60	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified
SFP9520	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	144 mJ	6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.6 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSW4N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFM9210	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.63 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	12 mJ	.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	.5 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified	TO-261AA
SSF8N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	95 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	436 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	95 W	150 Cel	SILICON	145 ns	330 ns		1.5 ohm	5.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			95 pF
SSW5N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	333 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.2 ohm	5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRLWZ44A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	857 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.025 ohm	50 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFS9540	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	53 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	43 A	229 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.2 ohm	10.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
IRFW720A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	249 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	3.3 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFI9630	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	563 mJ	6.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	6.5 A	SINGLE	R-PSIP-T3		Not Qualified
SSD2011	Samsung	P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	2 A	DUAL	R-PDSO-G8		Not Qualified
SSP3N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	286 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6.2 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSH60N06	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	790 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	406 ns	840 ns	TIN LEAD	.03 ohm	60 A	SINGLE	R-PSFM-T3		Not Qualified		e0
SSM40N20	Samsung	N-CHANNEL	SINGLE	NO	200 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						40 A
SSS80N06A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	3124 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.012 ohm	45 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFR9034	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	336 mJ	14 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.14 ohm	14 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSI3N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	286 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6.2 ohm	3 A	SINGLE	R-PSIP-T3		Not Qualified
SSR2N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	141 mJ	1.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	1.8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSM6N70	Samsung	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						6 A
SSP50N06	Samsung	N-CHANNEL	SINGLE	NO	170 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.024 ohm	50 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSW4N80ATM	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				4 ohm	4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSD2005	Samsung	P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.25 ohm	2.3 A	DUAL	R-PDSO-G8		Not Qualified
SSS5N80	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
SFS9624	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	144 mJ	2.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.4 ohm	2.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.